高频阻燃成端电缆技术发展

全面分析了成端电缆在高频传输特性、阻燃性和机械物理性能等方面的要求和存在的问题，讨论了相关电缆标准的局限性并提出了修改建议，总结了成端电缆制造技术、包括阻燃材料选择方面的经验。最后指出提高成端电缆性能的关键是改进绝缘芯线，提出了适用于室内通信电缆的复合双层绝缘结构的设计原则和制造工艺。     

本地网光缆线路物理双路由的互保问题

针对本地网光缆线路受市政建设的影响，迁、改割接比较频繁且常会受到外力的作用而阻断的情况，讨论了用户引入光缆和中继光缆物理双路由互保的问题。     

ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy

Low-temperature (LT) buffer-layer techniques were employed to improve the crystalline quality of ZnO films grown by molecular-beam epitaxy (MBE). Photoluminescence (PL) spectra show that CdO, as a hetero-buffer layer with a rock-salt structure, does not improve the quality of ZnO film grown on top. However, by using ZnO as a homo-buffer layer, the crystalline quality can be greatly enhanced, as indicated by PL, atomic force microscopy (AFM), x-ray diffraction (XRD), and Raman scattering. Moreover, the buffer layer grown at 450°C is found to be the best template to further improve the quality of top ZnO film. The mechanisms behind this result are the strong interactions between point defects and threading dislocations in the ZnO buffer layer.     

碳纳米管的大面积合成及磁性(英文)

通过溶胶凝胶法和氢气还原法制备出Co纳米颗粒并以此作为催化剂材料,通过催化裂解苯的方法,实现了较低温度(460℃)下在Co纳米颗粒表面上合成碳纳米管。采用X射线衍射、激光喇曼光谱、场发射扫描电镜、透射电子显微镜和振动样品磁强计对所合成的碳纳米材料进行了表征。通过优化实验参数,可制备出最大产率和纯度分别为约50和98.02%(质量分数)的碳纳米管。由于铁磁性Co纳米颗粒的进入,使得整个复合物表现出比较好的磁性能。和以往以苯作为碳源合成碳纳米材料相比,此合成方案简单、成本低,且对环境无任何危害,非常适用于磁性碳纳米复合物的批量合成。     

PDP荧光粉浆料用有机载体的研制

使用混合溶剂,得到了具有层次挥发性的PDP(等离子体显示板)荧光粉浆料用有机载体,研究了有机载体对烧结后荧光粉亮度的影响。结果表明:使用了载体的荧光粉浆料烧结后亮度比达98%(147nm),包膜荧光粉亮度比可达106%(147nm)。此载体可以用于配制PDP荧光粉浆料。     

千兆以太网数据传输技术在数字化高频地波雷达中的应用

介绍了千兆以太网数据传输技术在数字化高频地波雷达中的应用,说明了具体的实现方法,验证了在数字化高频地波雷达中应用千兆以太网数据传输技术的正确性。     

The trapping,detrapping, and transport of the ambipolar charges in the electret of Polystyrene/C60 blend films

The electrons and holes were injected into the blend electrets of polystyrene and C₆₀ (PS/C₆₀) by adjusting the biases of conductive atomic force microscopy probe. We visualized the charges trapping, release, diffusion, and retention processes of the PS/C₆₀ electrets by utilizing the Kelvin Probe Force Microscopy (KPFM), and found that the localization and retention abilities of the ambipolar charges are enhanced with the increase of C₆₀ content, indicating that blending C₆₀ in PS matrix is a promising method for the charge trapping layer in transistor memory devices. Furthermore, we discussed the storage and diffusion mechanisms, and speculated that the interface of C₆₀ and PS in the blend electrets and repulsive force between charge clusters around C₆₀ are the important factors for the novel storage effect of the blend electret.     

RS（255，247）译码器的FPGA实现

RS码是差错控制领域中一类重要的线性分组码,由于其出众的纠错能力,因而被广泛地应用于各种差错控制系统中,以满足对数据传输通道可靠性的要求。利用现场可编程门阵列（FPGA）技术由VHDL语言来实现RS（255,247）译码方案并应用于一种大容量的存储设备以提高数据传输和存储的可靠性。对所设计的硬件系统在ISE10．1平台上用VHDL进行了行为仿真和时序仿真,并给出了仿真波形图。     

Sn-8Zn-3Bi无铅焊料的表面改性

采用液相法用有机物改性剂对Sn-8Zn-3Bi焊料进行表面包覆改性,以改善焊料的润湿性能及抗氧化性能。对包覆样品进行了红外光谱表征。考察了样品的抗氧化性、润湿性能和存储性能。结果表明:采用液相法可以实现在Sn-8Zn-3Bi焊料表面包覆有机物。以有机物C为改性剂,且用量为2%(质量分数)时得到的改性样品的润湿角θ为7.8°,铺展面积S为108.83mm2,而未被改性的焊料θ为10.74°,S为93.40mm2。     

Efficient electron beam condensing for low-energy microcolumn lithography

Low-energy electron beam lithography has been performed with a microcolumn by adopting a new technique that condenses the electron beam efficiently. To increase the probe current while keeping the kinetic energy of electrons sufficiently low, the negative or positive bias has been applied to the accelerator electrode, which reduces the divergence of the electron beam and hence makes more electrons pass through the microcolumn. With this technique, the probe current more than 1 nA has been achieved, which is large enough for the practical application of microcolumn lithography even when the kinetic energy of electrons is as low as 160 eV. The results of microcolumn lithography by using the condensed electron beam with a low-energy of 160 and 327 eV are also presented.