超声处理对RTM成型复合材料界面性能的影响

在RTM成型过程中采用超声技术。探讨了超声处理的最佳工艺参数,着重研究超声处理对RTM成型复合材料界面性能的影响。结果表明,在RTM成型过程中采用超声技术增加了树脂对纤维增强体的浸润性,使树脂中的空气和成型过程中产生的气泡易于排出,从而减少了复合材料的孔隙率,进而改善复合材料的界面性能。     

液晶显示器的接口技术及其抗干扰措施

介绍了一般LCD与MCU的接口技术及其抗干扰措施，结合最近开发的绝缘油耐压测试仪中出现的CMOS自锁现象，提出了一种在强电磁场等特殊环境下，可靠使用液晶显示器的技术方法.     

COM组件接口方法参数的数据类型的选择

论述了在用 Visual C+ +建造 COM组件时 ,如何选择接口方法参数的数据类型的问题。结合客户程序是 ASP应用程序的情景 ,讨论利用 Visual C+ +和 ATL ,如何在组件程序的一端选择相应的数据类型。     

地震复合波地质属性的研究方法

在地震资料解释中,地震复合波的地质属性问题一直没有得到很好地解决。本文针对松辽盆地砂泥岩薄互层的地质特点,提出了用波形合成追踪法研究地震复合波地质属性的方法。该方法在地震复合波正演合成过程中有五个可以识别的特征界面,其中 C 界面是地震复合波形成的主导界面;C 至 D 界面间的地层为形成地震复合波的主要地层。因此,找准 C 界面深度是建立地震复合波与钻孔地层间有机联系的关键,对地震地质层位准确标定和利用地震剖面复合波波形信息进行岩性预测极为重要。文中的应用实例表明,用该方法在松辽盆地较好地建立了地震信息与地质信息间的对应关系,解决了一些疑难地质问题,取得了较好的勘探效果。     

Thermal stability of interfaces between metals and InP-based materials

The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively. Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor interfaces were the most stable.     

气相处理对碳纤维表面及其复合材料性能的影响

本文对气相表面处理碳纤维的新工艺进行了系统研究。处理后的碳纤维强度、模量不下降,且其表面能、表面化学官能团含量明显增加;表面微晶结构变小,与环氧树脂复合后,层间剪切强度(LLSS)提高47%左右。本文还对复合材料断口的形态结构进行了分析,说明这种表面处理方法能有效改善碳纤维增强环氧树脂复合材料(CFRP)的界面粘结。     

统计复用信道的数字用户环路复用设备

将信道传输容量动态分配技术应用于数字用户环路复用设备中，可用效地解决复用设备线路复用率和话音传输质量之间的矛盾，从而使复用设备具有最佳的传输效果。本文介绍了一种性能优良的统计复用信道的数字用户环路复用设备。     

Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy

Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy. The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH₃ over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring.     

单片机的显示接口电路设计

介绍了利用单片机的串、并行接口和专用显示接口 IC 设计显示接口电路的方法,并提供了4种动态和静态显示的硬件接口电路。     

On an invariance principle for unilateral contact at a bimaterial elastic interface

This paper examines the axisymmetric elastostatic problem related to the unilateral receding contact at a pre-compressed smooth bimaterial elastic interface. The separation at the interface is caused by the action of axisymmetric stress fields of unequal magnitude, which are applied at any location of the separate halfspace regions. The analysis of the problem focuses on the determination of the zone of separation as a function of the pre-compression, the magnitudes and locations of the axisymmetric stress fields inducing the separation, and the elasticity characteristics of the halfspace regions. It is found that the radius of the separation zone can be evaluated in explicit form. In the particular instance when the loadings applied at the surface of the halfspace regions are equal in magnitude and distribution, the analysis reveals that the radius of the separation zone is independent of the elasticity properties of the halfspace regions and can be evaluated in exact closed form.