改进电炉变压器有载调压开关的探讨

分析了目前使用的电炉变压器调压开关的原理及存在的问题，结合生产实际提出了改进方案。     

群时延精确设计的全差分四阶Bessel滤波器

采用MOS管有源电阻,提出了一种全差分R-MOSFET-C四阶Bessel有源低通滤波器,.通过调节工作于亚阈值区的CMOS管的沟道导纳补偿电阻值的大小,能抵消集成电路制造工艺中电阻值的一致偏差,实现Bessel有源滤波器群时延的精确设计.根据无源滤波器的状态方程完成有源滤波器的综合,应用3.3V,0.5μm CMOS工艺完成了群时延大小为0.75μs的四阶Bessel低通滤波器的管极计算机仿真,仿真结果表明所提电路正确有效,适于全集成.     

Thermography of aged contacts of high voltage equipment

New developments in diagnostic tools and systems are necessary for a reliable and economic evaluation of the condition of equipment in power systems. In a research project a tool for the condition of contacts of centre break disconnector, which is used under normal operation by the aid of a thermography measurement system, has been developed. In this paper, an overview about the laboratory investigation of the temperature load behaviour and the environmental influence on-site for new and aged disconnector contacts are given. A condition evaluation tool for contacts, which was the aim of the project, has been created. The basic method for the evaluation is presented, and also two additional easements for a fast identification of suspect contacts are presented. With this evaluation tool and the usage of a thermography based measuring system, a condition based maintenance strategy can be applied, whereby an early detection of damages is possible and so power quality and reliability increase.      

SiGe HBT基区结构的优化对欧拉电压的影响

欧拉电压是SiGe HBT一项重要的直流参数,受到基区结构(如Ge组分)的影响。研究发现,高温过程会导致硼的外扩散,从而影响异质结的位置,使欧拉电压受到影响。实验发现,通过优化基区结构,加厚CB结处i-SiGe厚度,可获得VA=520 V,βVA=164,320 V的SiGe HBT。     

工频电场对ADSS光缆特性的影响

随着电压等级的不断提高,超高压输电线路发展非常迅速.但是这些架空输电线路在运行时,附近存在较高的电场,对周围物体和公用走廊的其它线路会产生影响.电压等级越高,产生的电场影响越大.输电线路产生的电场越来越受到人们的重视.尤其是对于超高压输电线路,由于在电力铁塔上同塔悬挂全介质自承式光缆(ADSS),因此分析工频电场对ADSS光缆特性的影响非常必要.     

基于DDS改进BT-4型扫频仪

基于DDS技术,改造BT 4型扫频仪中的扫频信号发生器,使其具有高稳定度、高分辨率、高精度的特点。同时为了使扫频仪能够对被测电路的动态范围进行检测,使扫频仪得到更广泛的应用,运用了AGC控制技术,首先使电压稳定在10 V;然后通过控制D/A使输出电压按测试需要输出。硬件给出了具体电路参数,软件给出了相应软件流程,总结了其他波型产生的方法。     

三峡工地高压供电线路故障判断方法的探讨

高压供电设备故障特别是输电线路的高压接地故障对工地的影响是相当大的。由于接地故障为隐性故障，没有明显的物理现象，且若是长期接地可能会发展成较为严重的两相或三相短路故障，使系统解列运行直至崩溃；由于工地流动人员较多，还易造成电击事故。利用高压一相接地时在线路中产生零序电压这一特性来迅速判断和切除接地的用电设备，可以保证各项施工的顺利进行。     

TRVs and fault clearing stresses in extra-high-voltage radial networks

To cope with the high rate of increase of power demand in the main industrialized districts in Japan, 550-kV transmission systems covering the districts have been reinforced, with most of the main power plants connected directly to these systems. Through 550-/300-kV substations, the majority of power to the districts is supplied by 300-kV systems. To limit the excess short-circuit capacity in the 300-kV systems, they tend to be reconstructed as so-called radial networks. In radial networks with high short-circuit capacity and relatively small number of transmission lines connected to the substation busbars, the rate of rise of TRV can be far higher than standard value. This paper analyzes the transient recovery voltages (TRV) in such extra-high-voltage radial networks in Japan, together with the relevant stresses to circuit-breakers during fault clearings. Future system conditions have also been introduced. As the typical rate of rise of the TRV values, more than twice that of today's standard ones are probable.     

A new voltage control equipment using fuzzy inference

Power system control equipment needs higher sensitivity and operational reliability. Advanced voltage control equipment is needed for reducing the frequency of tap changes and improving the characteristics (the relationship between the actual voltage and reference voltage) of the voltage to meet today's power system requirements. However, these objectives are in a trade-off relationship. Studies of voltage control derived from a knowledge base suitable for electric power systems can satisfy these objectives using fuzzy inference. Compared with corresponding conventional equipment, the new equipment improved the deviation of 30 min average voltage of 30 percent. This paper describes the design concept of new voltage control equipment using fuzzy inference. In addition, field test results are described along with rules of fuzzy inference, membership functions, and the deviation of 30 min average voltage through detailed simulation.     

高电容比射频/微波MEMS膜开关的理论分析和数值模拟

建立了一个MEMS膜开关电容比理论模型，由于这个模型比较全面地考虑了开关阈值电压、维持电压、偏置电压和介质膜内的电场强度等因素对电容比的影响，因而能较为正确地反映开关的电容特性。用数值方法计算了影响开关电容比的因素，并对计算结果进行了分析和讨论。提出了使用脉冲电压作为偏置电压可以使介质膜gj的厚度减少到50nm，从而使开关的电容比增加到3800。最后，讨论了实现高电容比MEMS膜开关的可行性。