A copper/polyimide Metal-base packaging technology

A unique substrate MCPM (Mitsubishi Copper Polyimide Metal-base) technology has been developed by applying our basic copper/polyimide technology.¹ This new substrate technology MCPM is suited for a high-density, multi-layer, multi-chip, high-power module/package, such as used for a computer. The new MCPM was processed using a copper metal base (110 × 110 mm), full copper system (all layers) with 50-μm fine lines. As for pad metallizations for the IC assembly, we evaluated both Ni/Au for chip and wire ICs and solder for TAB ICs. The total number of assembled ICs is 25. To improve the thermal dispersion, copper thermal vias are simultaneously formed by electro-plating. This thermal via is located between the IC chip and copper metal base, and promotes heat dispersion. We employed one large thermal via (4.5 mm^?) and four small vias (1.0 mm^?) for each IC pad. The effect of thermal vias and/or base metal is simulated by a computer analysis and compared with an alumina base substrate. The results show that the thermal vias are effective at lowering the temperature difference between the IC and base substrate, and also lowering the temperature rise of the IC chip. We also evaluated the substrate’s reliability by adhesion test, pressure cooker test, etc.     

基于2,4-二羟基苯甲酸铜(Ⅱ)为载体的硫氰酸根电极的电位响应

制备了基于一种简单的金属铜配合物2,4-二羟基苯甲酸铜(Ⅱ)(Cu(Ⅱ)DHBA)为载体的PVC膜硫氰酸根离子(SCN-)选择性电极。该电极在1.0×10-1～1.0×10-6mol/LSCN-浓度范围内呈现斜率为-59.5mV/dec的近Nernst电位响应,检测下限为9.1×10-7mol/L。利用紫外可见光谱及交流阻抗技术初步探讨了电极对SCN-呈现的选择性电位响应机理。该电极作为直接电位分析法的指示电极,成功运用于实验室废水中硫氰酸盐含量的测定。     

Aluminum. II. Derivation of C v0from C p and comparison to C v0 calculated from anharmonic models

The specific heat at constant pressure, C _p, of aluminum measured by Ditmars, Plint, and Shukla has been reduced to the volume V ₀ appropriate for 0 K employing the Murnaghan equation. The C _v0 thus obtained is compared with the theoretical C _v0 calculated in the harmonic and the lowest-order anharmonic approximation from three different pseudopotentials (Harrison, Ashcroft, and Dagens-Rasolt-Taylor) as well as a phenomenological Morse potential. The higher-order ( ⁴) anharmonic contributions are calculated from the same nearest-neighbor Morse potential as in the lowest-order anharmonic theory. The role of the vacancy and the higher-order anharmonic contributions to C _v0 has been examined and we conclude that the ⁴ contributions to C _v0 are much smaller than the vacancy contribution. After removal of the vacancy contribution, the reduced C _v0 is found to be in excellent agreement with the Ashcroft and Harrison pseudopotentials as well as the Morse potential including the ² and ⁴ contributions to C _v0.     

2000～2001年金属磁性功能材料新进展

综述了金属磁性功能材料在2000－2001年间的若干新进展，内容包括：（1）高性能稀土永磁合金；（2）高性能硅钢合金；（3）Fe-N系新磁性材料；（4）磁电子学；（5）形状记忆磁性材料。     

铝阳极氧化膜颜色的检验和观察法

介绍铝及铝合金阳极氧化膜颜色的概念和描写,对颜色的儿种测量方法进行了比较,重点分析观察法及其在各国标准中的异同。在此基础上,提出了GB8013中的对颜色进行观察的条件和理论根据。     

铌对20MnSi钢奥氏体化和静态再结晶的影响

研究了微合金元素铌对20MnSi钢奥氏体化和静态再结晶的影响规律,得出了铌对20MnSi钢奥氏体晶粒长大行为的影响规律。在Gleeble-1500热模拟试验机上进行了20MnSi钢的静态再结晶试验,得出了铌对20MnSi钢静态再结晶的影响规律。     

65Mn钢CCT曲线及圆锯片淬火工艺

用全自动相变测定仪测定了圆锯片常用６５Ｍｎ钢的连续冷却转为曲线，研究了不同连续冷却速度下得到的组织，为合理制订圆锯片的淬火工艺提供了依据，得到了最佳淬火工艺曲线。     

锌铝超塑性合金超塑压缩试验研究

对Ｚｎ－２２％Ａｌ超塑性合金进行了等温超塑压缩试验。在相同的温度、变形速率条件下，研究了不同的变形强度与流动应力及硬度，以及在相同的温度、变形程度条件下，不同的变形速率与流动应力等的关系。     

燃烧合成三元碳化合物Ti2AlC1-x

采用Ti，Al和C元素粉末为反应物原料，通过燃烧合成法首次成功地制备出了单相三元碳化合物Ti2AlC1-x。实验结果表明：若以“理想”晶体结构化学式Ti2AlC化学计量比为起始反应原料配比，燃烧产物主晶相为Ti2AlC2；以缺碳的非化学计量比(Ti2AlC1-x)为反应原料配比，即Ti：Al：C=3：1．5：1=2：1：0．7(摩尔比)，得到单相的燃烧产物Ti2AlC1-x。从热力学原理的角度探讨了不同原料摩尔配比对燃烧产物相组成的影响机理。     

Study on diffusion welding SiCp/ZL101 with Cu interlayer

Through the vacuum diffusion welding SiCp/ZL101 aluminum with Cu interlayer,the effect of welding parame-ter and the thickness of Cu on the welded joint property was investigated,and the optimal welding parameters were putforward at the same time.The microstructure of joint was analyzed by means of optical-microscope,scanning electron mi-croscope in order to study the relationship between the macro-properties of joint and the microstructure.The results showthat diffusion welding with Cu interlayer could be used for welding aluminum matrix composites SiCp/ZL101 successfully.