Pre-bainitic Transformation in Fe-Ni Alloy

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Effects of the International Temperature Scale of 1990 (ITS-90) on CIE Documentary Standards for Radiometry,Photometry, and Colorimetry

The differences between ITS-90 and IPTS-68 above 1235 K are described. It is shown that none of the following CIE definitions or recommendations require revision because of the introduction of the ITS-90: International Lighting Vocabulary definitions; CIE Standard Illuminants A, D₆₅, other illuminants; and sources for realizing CIE Illuminants. The effect of the ITS-90 on previously calibrated sources for realizing CIE illuminants is negligibly small.²     

A copper/polyimide Metal-base packaging technology

A unique substrate MCPM (Mitsubishi Copper Polyimide Metal-base) technology has been developed by applying our basic copper/polyimide technology.¹ This new substrate technology MCPM is suited for a high-density, multi-layer, multi-chip, high-power module/package, such as used for a computer. The new MCPM was processed using a copper metal base (110 × 110 mm), full copper system (all layers) with 50-μm fine lines. As for pad metallizations for the IC assembly, we evaluated both Ni/Au for chip and wire ICs and solder for TAB ICs. The total number of assembled ICs is 25. To improve the thermal dispersion, copper thermal vias are simultaneously formed by electro-plating. This thermal via is located between the IC chip and copper metal base, and promotes heat dispersion. We employed one large thermal via (4.5 mm^?) and four small vias (1.0 mm^?) for each IC pad. The effect of thermal vias and/or base metal is simulated by a computer analysis and compared with an alumina base substrate. The results show that the thermal vias are effective at lowering the temperature difference between the IC and base substrate, and also lowering the temperature rise of the IC chip. We also evaluated the substrate’s reliability by adhesion test, pressure cooker test, etc.     

基于2,4-二羟基苯甲酸铜(Ⅱ)为载体的硫氰酸根电极的电位响应

制备了基于一种简单的金属铜配合物2,4-二羟基苯甲酸铜(Ⅱ)(Cu(Ⅱ)DHBA)为载体的PVC膜硫氰酸根离子(SCN-)选择性电极。该电极在1.0×10-1～1.0×10-6mol/LSCN-浓度范围内呈现斜率为-59.5mV/dec的近Nernst电位响应,检测下限为9.1×10-7mol/L。利用紫外可见光谱及交流阻抗技术初步探讨了电极对SCN-呈现的选择性电位响应机理。该电极作为直接电位分析法的指示电极,成功运用于实验室废水中硫氰酸盐含量的测定。     

Aluminum. II. Derivation of C v0from C p and comparison to C v0 calculated from anharmonic models

The specific heat at constant pressure, C _p, of aluminum measured by Ditmars, Plint, and Shukla has been reduced to the volume V ₀ appropriate for 0 K employing the Murnaghan equation. The C _v0 thus obtained is compared with the theoretical C _v0 calculated in the harmonic and the lowest-order anharmonic approximation from three different pseudopotentials (Harrison, Ashcroft, and Dagens-Rasolt-Taylor) as well as a phenomenological Morse potential. The higher-order ( ⁴) anharmonic contributions are calculated from the same nearest-neighbor Morse potential as in the lowest-order anharmonic theory. The role of the vacancy and the higher-order anharmonic contributions to C _v0 has been examined and we conclude that the ⁴ contributions to C _v0 are much smaller than the vacancy contribution. After removal of the vacancy contribution, the reduced C _v0 is found to be in excellent agreement with the Ashcroft and Harrison pseudopotentials as well as the Morse potential including the ² and ⁴ contributions to C _v0.     

铝阳极氧化膜颜色的检验和观察法

介绍铝及铝合金阳极氧化膜颜色的概念和描写,对颜色的儿种测量方法进行了比较,重点分析观察法及其在各国标准中的异同。在此基础上,提出了GB8013中的对颜色进行观察的条件和理论根据。     

Study on diffusion welding SiCp/ZL101 with Cu interlayer

Through the vacuum diffusion welding SiCp/ZL101 aluminum with Cu interlayer,the effect of welding parame-ter and the thickness of Cu on the welded joint property was investigated,and the optimal welding parameters were putforward at the same time.The microstructure of joint was analyzed by means of optical-microscope,scanning electron mi-croscope in order to study the relationship between the macro-properties of joint and the microstructure.The results showthat diffusion welding with Cu interlayer could be used for welding aluminum matrix composites SiCp/ZL101 successfully.     

高铝高炉渣系的熔化特性

 为了掌握高Al₂O₃条件下(w(Al₂O₃)为15%以上)高炉渣系的熔化特性,利用差式扫描量热仪分析了不同w(MgO)/w(Al₂O₃)、碱度(R)以及w(Al₂O₃)对高铝高炉渣的熔化温度及熔化热的影响。试验结果表明,炉渣熔化开始温度为1 248～1 291 ℃、熔化结束温度为1 432～1 485 ℃、熔化热为137～211 J/g;当w(Al₂O₃)=15%、高w(MgO)/w(Al₂O₃)时,发生了共晶逆反应,导致高炉炉渣熔化开始温度逐渐降低,但由于高炉炉渣的液相线温度基本未变,所以炉渣熔化结束温度基本未发生改变;w(Al₂O₃)为20%时,随着w(MgO)/w(Al₂O₃)的增加,炉渣中易生成熔点较高的镁铝尖晶石,导致高炉炉渣熔化开始温度逐渐增大,与此同时,炉渣液相线温度逐渐降低,导致炉渣熔化结束温度逐渐降低;随着碱度R的增加,高炉炉渣中生成了具有高熔点的化合物、炉渣的液相线温度升高,使得高炉炉渣的熔化开始温度逐渐增加、炉渣熔化结束温度逐渐升高;随着w(Al₂O₃)的增加,发生了共晶逆反应,故炉渣的熔化开始温度逐渐降低,而随着w(Al₂O₃)的增加,炉渣中键能较大的Al—O键增多,需要在更高温度下才能实现炉渣的最终熔化,即熔化结束温度逐渐增加;随着w(MgO)/w(Al₂O₃)、R以及w(Al₂O₃)的增加,炉渣熔化热逐渐增多。分析认为,随着R的增加,炉渣中有高熔点化合物的生成,熔化热增加;随着炉渣中w(Al₂O₃)的增加,炉渣中Al—O键增多,解聚破坏熔渣结构消耗的热量增多;而随着w(MgO)/w(Al₂O₃)增加,高熔点化合物的生成或熔化开始温度降低,造成熔化热增加。     

贵金属Cu、Ag、Au的电子结构和物理性质

由纯金属单原子理论(OA)确定了面心立方结构(FCC)贵金属Cu、Ag、Au的电子结构依次为[Ar](3dn)5.58(3dc)4.21(4sc)0.23(4sf)0.98、[Kr](4dn)4.87(4dc)4.56(5sc)0.66(5sf)0.91、[Xe](5dn)4.20(5dc)4.90(6sc)1.57(6sf)0.33,并确定了Cu、Ag、Au的密排六方结构(HCP)和体心立方结构(BCC)两种初态特征晶体和初态液体的电子结构。根据自然态的电子结构定性解释了熔点、拉伸强度、维氏硬度、体弹性模量、电导和热导率物理性质差异与电子结构的关系,定量计算了晶格常数、结合能、势能曲线及线热膨胀系数随温度的变化。根据非自然态的电子结构,定性解释了晶体结构BCC和HCP的关系。     

浸渗工艺对SiC/Al复合材料残余气孔率的影响

采用无压浸渗法制备了SiC/Al复合材料,从浸渗动力学和工艺方法的角度探讨了浸渗保温时间和降温方式对复合材料的残余气孔率的影响。结果表明:随着保温时间的适当延长,能有效地降低复合材料的残余气孔率;连续降温优于分段降温,有利于降低SiC/Al复合材料的残余气孔率。