Study on Oxygen-Sensing Properties of LaNiO3 Thin Films

The synthesis of rare-earth perovskite-type composition thin films of LaNiO₃ by means of the inorganic-sol-gel (ISG) method was studied. The structural stability under high temperature in reducing atmospheres and the oxygen-sensitivity mechanism of the LaNiO₃ thin films were examined. It is shown that under the experimental conditions, LaNiO₃ decomposes and the valance states of nickel are +2 and +3.     

(Fe_(0.86)Zr_(0.033)Nb_(0.033)B_(0.068)Cu_(0.01))_x(Al_2O_3)_(1-x)颗粒膜的霍耳效应

用磁控溅射方法制备了系列 (Fe0 .86 Zr0 .0 33Nb0 .0 33B0 .0 6 8Cu0 .0 1 ) x(Al2 O3) 1 -x颗粒膜样品 ,体积百分比x从 0 .3 3～ 0 .63 ,样品厚度约为10 0nm。室温下在Fe0 .86 Zr0 .0 33Nb0 .0 33B0 .0 6 8Cu0 .0 1 体积百分比x =0 .43时得到 17.5 μΩ·cm的最大饱和霍耳电阻率 ,比纯铁磁金属提高了 3～ 4个量级。对其磁性和微结构进行了研究 ,样品霍耳电阻率随外场的变化曲线 ρxy～H与磁场平行于膜面时的磁化曲线M～H有相似性 ,说明霍尔电阻率 ρxy与磁化强度M相关。样品电阻率 ρxx随金属体积百分比x的减小而增加 ,在x =0 .43附近发生突变 ,从金属导电变为绝缘体。根据微结构和输运性质对可能的机制进行了探讨     

石英晶体监控法镀制高精度光学薄膜

讨论了石英晶体监控法在光学薄膜镀制过程中的应用原理。通过与常规的光学监控法镀制的膜层相比较．证实了石英晶体监控法有助于提高光学薄膜的光学品质。试验表明所镀膜层的光学性能优异，在光通信和激光器等领域具有广阔的应用前景。     

薄板坯表面变形实验分析

对连铸薄板坯的坯壳表面变形的物理模拟实验方法进行了分析,提出一种"铜裹铅双金属"新实验方案,并对坯壳表面弯曲变形进行了分析.     

光隔离器及其相关的磁光材料

本文简要介绍了磁光隔离器的理论、结构和分类 ,并提出了该器件今后发展的几个问题 ,最后介绍了几种磁光材料     

应用ITO膜作电荷收集极的位置灵敏探测器

首次尝试将ITO（Indium Tin Oxide）膜与微通道板（Microchannel Plate）结合用作位置灵敏探测器，并对该探测器的线性、位置分辨及探测效率作了测试，得到了令人满意的结果。     

只读式超分辨光盘的膜层设计和分析

超分辨技术是一种无需减小记录波长或增大数值孔径而提高存储密度的方法。Ge Sb Te是一种良好的相变光存储材料 ,在超分辨光盘中可作为掩膜。利用多层膜反射率的矩阵法计算了掩膜为Ge2 Sb2 Te5薄膜的超分辨只读式光盘的光学参数与各膜层厚度之间的关系 ,最后得到了较为理想的膜层厚度匹配。采用磁控溅射法制备了只读式超分辨光盘 ,测量了光盘的光学性质。     

Development of nano indium tin oxide (ITO) grains by alkaline hydrolysis of In(III) and Sn(IV) salts

Indium tin oxide (ITO) nano powders of different compositions (In: Sn = 90: 10, 70: 30 and 50: 50) were prepared by heat treatment (300-450°C) of mixed hydroxides of In(III) and Sn(IV). The hydroxides were obtained by the reaction of aq. NH₃ with mixed aq. solutions of In(NO₃)₃ and SnCl₄. FTIR and TG/DTA studies revealed that powders existed as In(OH)₃H₂O—SnO₃H₂H₂O in the solid state and then they transformed to In₂O₃—SnO₂ via some metastable intermediates after 300°C. Cubic phase of In₂O₃ was identified by XRD for the oxides up to 30% of Sn. Particle size measurements of the solid dispersed in acetone and SEM study for microstructure showed that the oxides were in the nano range (55-75 nm) whereas the size range determined from Debye-Scherrer equation were 11–24 nm.     

CHARACTERIZATION OF Si_(1-x-y)Ge_xC_y FILMS GROWN BY ION IMPLANTATION AND SUBSEQUENT SOLID PHASE EPITAXY

Si1-x-yGexCy ternary alloy films were grown on monocrystalline silicon substrates by C ion implantation and subsequent solid phase epitaxy (SPE). Two-step anneal-ing technique was employed in the SPE. The structure and electrical properties of the alloy films were determined using Fourier transform infrared spectroscopy and van der Pauw Hall measurements, respectively. With the optimization of two-step anneal-ing technique for the implanted Si1-x-yGexCy layers, a certain amount of C atoms occupied substitutional sites and no SiC was formed.     

纳米ZnO薄膜制备及液态源掺杂

用真空蒸发法在玻璃和单晶硅片 (10 0 )上制备Zn薄膜 ,然后对Zn薄膜进行氧化、热处理获得纳米ZnO薄膜。对在硅片上制备的Zn薄膜一次性进行高温掺杂、氧化获得纳米ZnO∶P和ZnO∶B薄膜。研究不同氧化、掺杂温度和时间对薄膜结构、电学性能的影响。结果表明 :氧化温度和时间对ZnO薄膜结构影响较大 ,液态源掺P可明显改善纳米ZnO薄膜的导电性能、结构特性和化学组分