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91.
提出种基于TEMIC射频卡Manchester编码的速率自适应读卡算法,并对该算法进行了说明和示例。 相似文献
92.
文章讨论了OSPF路由协议的扩散算法在多冗余点到点链路情况下存在的缺陷,提出了一种基于扩散接口选举的改进方案。 相似文献
93.
Aiming at the detail rendering in volume data, a new volume illumination model, called Composed Scattering Model (CSM), is presented. In order to enhance different details in volume data, scattering intensity is decomposed into volume scattering intensity and surface scattering intensity with different weight functions. According to the Gauss probability distribution of gray and gradient of data, we propose an accurate method to detect the materials in a voxel, called composed segmentation. In addition, we discuss the principle of constructing these weight functions based on the operators defined in composed segmentation. CSM can generate images containing more details than most popular volume rendering models. This model has been applied to the direct volume rendering of 3D data sets obtained by CT and MRI. The resultant images show not only rich details but also clear boundary surfaces. CSM is demonstrated as an accurate volume rendering model suited for detail enhancement in volume data sets. 相似文献
94.
J Strother Moore 《Formal Aspects of Computing》1994,6(1):60-91
We present a formal model of asynchronous communication between two digital hardware devices. The model takes the form of a function in the Boyer-Moore logic. The function transforms the signal stream generated by one processor into that consumed by an independently clocked processor, given the phases and rates of the two clocks and the communications delay. The model can be used quantitatively to derive concrete performance bounds on communications at ISO protocol level 1 (physical level). We use the model to show that an 18-bit/cell biphase mark protocol reliably sends messages of arbitrary length between two processors provided the ratio of the clock rates is within 5% of unity. 相似文献
95.
对溢洪闸门自动监控系统中几个问题的探讨 总被引:1,自引:1,他引:0
结合某水电站介绍了溢洪闸门自动监控系统的结构、功能,讨论了该研制过程中的几个问题的解决办法. 相似文献
96.
97.
98.
J. W. Huang J. M. Ryan K. L. Bray T. F. Kuech 《Journal of Electronic Materials》1995,24(11):1539-1546
The defect engineering in metalorganic vapor phase epitaxy InxGa1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has
led to the incorporation of Al and O, and the compensation of shallow Si donors in InxGa1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent
of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on
a series of InxGa1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in
DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction
band and led to a high electron concentration in oxygen doped In0.53Ga0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the
near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation
of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels. 相似文献
99.
100.