光固化成形系统激光光斑光强分布检测方法研究

激光束的模式及光强分布对光固化成形制件质量的影响很大。本文采用针孔矩阵扫描方法。检测激光束投射在工作平面上的光斑,并经过数据处理获得光斑的二维和三维的光斑分布图像。该方法获得的数据既可对光斑进行定量分析也可用于定性分析。     

Nanotrenches Induced by Catalyst Particles on ZnSe Surfaces

Nanotrenches are induced by thermal annealing Au droplets on ZnSe surfaces. High-resolution scanning electron microscopy studies of the nanotrench structures reveal that the preferred migration directions of the catalyst droplets are along the direction family. On a ZnSe(111)B surface, each of the trenches is along one of the six directions while on a nonvicinal ZnSe(100) surface, the trenches are along a pair of antiparallel directions. Based on the results obtained from atomic force microscopy surface profiling and electron energy-loss spectroscopy chemical analysis techniques, a model is proposed to describe the possible formation mechanisms of the␣observed nanotrenches. The highly parallel nanotrenches induced on the Au/ZnSe(100) structure as revealed in this study are potentially useful as a template for in situ fabrication of ordered one-dimensional nanostructures (such as nanowires) of many materials.     

Optimization and experimentation of nanoimprint lithography based on FIB fabricated stamp

The maskless and resistless focused ion beam (FIB) fabrication approach to make imprint stamp is straightforward and rapid compared to the traditional electron beam method. FIB etched stamp consisting of grooves was employed to nanoimprint polymer mr-I 9020. Taguchi orthogonal experiment with four parameter elements, one at three levels was used to optimize the experiment parameters by the analysis of means and variances. The most significant factor influencing the height of replicated lines is imprint temperature and the optimal combination of the process parameters are the imprint temperature at 160 °C, imprint force at 1200 N, loading force velocity at 0.2 mm/min, and imprint time at 300 s.     

InGaAs and Ge MOSFETs with high κ dielectrics

InGaAs and Ge MOSFETs with high κ’s are now the leading candidates for technology beyond the 15 nm node CMOS. The UHV-Al₂O₃/Ga₂O₃(Gd₂O₃) [GGO]/InGaAs has low electrical leakage current densities, C-V characteristics with low interfacial densities of states (D_it’s) and small frequency dispersion in both n- and p-MOSCAPs, thermal stability at temperatures higher than >850 °C, a CET of 2.1 nm (a CET of 0.6 nm in GGO), and a well tuning of threshold voltage V_th with metal work function. Device performances in drain currents of >1 mA/μm, transconductances of >710 μS/μm, and peak mobility of 1600 cm²/V s at 1 μm gate-length were demonstrated in the self-aligned, inversion-channel high In-content InGaAs n-MOSFETs using UHV-Al₂O₃/GGO gate dielectrics and ALD-Al₂O₃. Direct deposition of GGO on Ge without an interfacial passivation layer has given excellent electrical performances and thermodynamic stability. Self-aligned Ge p-MOSFETs have shown a high drain current of 800 μA/μm and peak transconductance of 420 μS/μm at 1 μm gate-length.     

激光热处理光束优化系统

激光束的光强分布以及光斑形状对激光热处理硬化层性能影响极大,一般要求光强均布的矩形光斑或宽带光斑;但是光强均布的激光束不一定产生均匀的硬化层,目前的激光热处理光束优化装置得到的是中间厚,两边薄的月牙形分布硬化层.为了改善激光热处理硬化层分布的均匀性,在分析国内外激光热处理光束优化系统研究现状及存在问题的基础上,提出了光束优化系统的两种方案,激光扫描环形光斑和线形光斑.建立了两种光斑温度场的数学模型,模拟了温度场分布.从理论上说明了两种方案能够改善激光热处理硬化层分布均匀性.     

Enhanced output power of (indium) gallium nitride light emitting diodes by a transparent current spreading-film composed of a disordered network of indium tin oxide nanorods

A thin film consisting of a disordered nanorod network of indium tin oxide (ITO) and conventional ITO films are fabricated on gallium nitride (GaN) based-light emitting diodes (LEDs) by electron beam evaporation. The surface morphologies are observed by scanning electron microscopy (SEM). The disordered nanorod network of ITO is grown in vacuum without oxygen. It can be applied directly on the LED as the current spreading film unlike other nanorods which require growth on a conductive layer. The transmittance, current–voltage characteristic, and the dependence of light output power on current are measured for disordered nanorod network ITO LEDs and conventional ITO LEDs, respectively. The measurement results indicate that the nanorod network provides a significant improvement in the light output power of GaN-based LEDs. The influence of the structure of ITO films on the light output power of GaN-based LEDs is discussed.     

三维光成型基础固化工艺的仿真和实验研究

在紫外光对液态树脂进行固化成型过程中，扫描光斑的直径、光强和扫描速度等工艺参数对固化结果有着直接影响。首先结合高斯光束的固化理论分析，从平面固化成型基本要素的直线段、圆弧线段的线宽、线高及其精度入手，在理论上分别得到线宽、线高与工艺参数之间的正比关系和指数关系；其次，通过Matlab的建模计算，明确了光强度和扫描速度的变化对固化线宽和线高影响程度的相近性，其中，扫描速度大于600μm／s后，随着速度的增大其产生的误差也越大，并通过实验研究验证了理论分析和建模方法的正确性。最后，通过仿真和实验对工艺参数以及扫描方式的优化，有效地解决了平面轮廓固化扫描中转向拐点处重复曝光引起的固化精度问题。     

Analysis of the propagation losses of InP/InGaAsP trench waveguides fabricated by focused ion beam

Focused ion beam was used to fabricate 2 mm-long, 4 μm-wide and 4 μm-deep multimode trench waveguides in InP/InGaAsP. An automated stitching method was developed to fabricate mm-long structures using alignment marks. The waveguides were sputtered or etched using I₂ at room temperature and 150 °C stage temperature. The propagation losses induced by the different fabrication techniques were measured and ranged between 50 and 82 dB/cm. A damaged layer with implanted Ga and the sidewall roughness are identified to be the most important causes for the losses. FIB is shown to be a single-step fabrication technique for rapid-prototyping of photonic structures in InP/InGaAsP.     

The behavior of unintentional impurities in Ga0.47 In0.53As grown by MBE

A number of factors contribute to the high n-type background carrier concentration (high 10¹⁵ to low 10¹⁶ cm⁻³) measured in MBE Ga_0.47In_0.53As lattice-matched to InP. The results of this study indicate that the outdiffusion of impurities from InP substrates into GalnAs epitaxial layers can account for as much as two-thirds of the background carrier concentration and can reduce mobilities by as much as 40%. These impurities and/or defects can be gettered at the surfaces of the InP by heat treatment and then removed by polishing. The GalnAs epitaxial layers grown on the heat-treated substrates have significantly improved electrical properties. Hall and SIMS measurements indicate that both donors and acceptors outdiffuse into the epitaxial layers during growth resulting in heavily compensated layers with reduced mobilities. The dominant donor species was identified by SIMS as Si, and the dominant acceptors as Fe, Cr and Mn.