Boron implantation and epitaxial regrowth studies of 6H SiC

Implantation of B has been performed into an epitaxially grown layer of 6H SiC, at two different B concentrations, 2×10¹⁶ cm⁻³ and 2×10¹⁸ cm⁻³. Subsequently, an epitaxial layer was regrown on the B implanted layer. The samples were investigated by transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS). In the highly B-doped layers plate-like defects were found, associated with large strain fields, and an increased B concentration. These defects were stable at the originally implanted region during regrowth and at anneal temperatures up to 1700°C. In the samples implanted with the lower B concentration, no crystal defects could be detected by TEM. No threading dislocations or other defects were observed in the regrown epitaxial layer, which shows the possibility to grow a layer with high crystalline quality on B implanted 6H SiC. By SIMS, it was found that B piles up at the interface to the regrown layer, which could be explained by enhanced diffusion from an increased concentration of point defects created by implantation damage in the region. B is also spread out into the original crystal and in the regrown layer at a concentration of below 2×10¹⁶ cm⁻³, with a diffusion constant estimated to 1.3×10⁻¹² cm²s⁻¹. This diffusion is most probably not driven by implantation damage, but by intrinsic defects in the grown crystal. Our investigation shows that the combination of implantation and subsequent regrowth techniques could be used in SiC for building advanced device structures, with the crystal quality in the regrown layer not being deteriorated by crystal defects in the implanted region. A device process using B implantation and subsequent regrowth could on the other hand be limited by the diffusion of B.     

Lattice instability in ZnSe:Ni crystal

Ultrasonic experiments, done on ZnSe:Ni crystal with the dopant concentration 5.5×10¹⁹ cm⁻³, revealed precursor phenomenon in the form of lattice softening at temperatures significantly exceeding the temperature of structural transition (T_c=14.5 K). It proved to be that the order parameter of the transition was associated with the shear deformation ε₄. Investigation of thermal conductivity (κ) in the same temperature region pointed out that the Jahn-Teller (JT) effect could be responsible for the anomalous behavior of κ(T) and lattice instability.     

Amplitude estimation for near‐sinusoidal oscillators by using a modified Barkhausen criterion

By using an approach based on the Taylor/Volterra series, nonlinear amplifier characteristics can be introduced into the Barkhausen criterion in order to estimate the amplitude for near‐sinusoidal oscillators. The characteristic equation is similar to the 1^st‐order determining equation obtained by Chua. This new method includes all desirable features of Chua's equation and lets us generalize the linear approach directly to a nonlinear one without losing the mathematical simplicity of the Barkhausen criterion. It also allows us to determine the oscillation amplitude with a desired accuracy. Moreover, this method investigates the influence of the feedback factor and the voltage supply on the oscillation amplitude. Employing only the 3^rd‐order nonlinearity of the amplifying element, the amplitude of the oscillation predicted by the modified Barkhausen criterion was compared to the one estimated using the transient analysis of SPICE, the harmonic balance analysis of Serenade, and by measurements. The amplitudes obtained by these four approaches for several feedback factors and supply voltages are in good agreement. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2005.     

Reducing Off-Chip Memory Access via Stream-Conscious Tiling on Multimedia Applications

The iteration space of a loop nest is the set of all loop iterations bounded by the loop limits. Tiling the iteration space can effectively exploit the available parallelism, which is essential to multiprocessor compiling and pipelined architecture design. Another improvement brought by tiling is the better data locality that can dramatically reduce memory access and, consequently, the relevant memory access energy consumptions. However, previous studies on tiling were based on the data dependence, thus arrays without dependencies such as input arrays (data streams) were not considered. In this paper, we extend the tiling exploration to also accommodate those dependence-free arrays, and propose a stream-conscious tiling scheme for off-chip memory access optimization. We show that input arrays are as important, if not more, as the arrays with data dependencies when the focus is on memory access optimization instead of parallelism extraction. Our approach is verified on TI’s low power C55X DSP with popular multimedia applications, exhibiting off-chip memory access reduction by 67% on average over the traditional iteration space tiling.     

Analytical expressions for intermodulation distortion of a MESFET small-signal amplifier using the nonlinear Volterra series

Using the nonlinear Volterra series representation, analytical expressions for the third-order intermodulation distortion power and intercept point for a MESFET small-signal amplifier are derived when its equivalent circuit is bilateral and includes the gate-to-drain capacitance (C_gd) explicitly as a nonlinear element. Previously developed analytical expressions treated C_gd as a linear element or incorporated it as a part of gate-to-source and drain-to-source capacitances (C_gs and C_ds). These new analytical expressions are then compared with experimental data and good agreement is obtained. The analytical expressions are also used to study the variation of intermodulation distortion with input power and frequency, and the effect of the individual nonlinear elements in the MESFET’s equivalent circuit.     

用光梯度场控制原子制做纳米点阵研究

提出制做纳米点阵的一种新方法。用波长为 4 2 5 .5 nm的光梯度场操纵铬原子可制做出阵列密度达 2 .2 1× 10 7per/ mm2、理论半高宽度 (FWH M)可达 10 nm的纳米点阵。介绍用光梯度场操纵原子制做纳米点阵的原理 ,对原子束的准直进行分析 ,给出原子束在激光梯度场中聚焦的经典模型和量子模型并进行数值模拟。用光操纵原子制做纳米点阵使器件的阵列密度和尖端曲率得到大幅度提高 ,该器件作为发射极可以降低工作电压和提高发射电流。     

Macroscopic isotropy of two- and three-dimensional elastic lattice models

Particle methods such as the meso-particle method or the method of movable cellular automata provide new possibilities for the simulation of wear, mass-transfer, plastic deformation and melting processes. One crucial point, however, is to ensure that in the continuum limit macroscopic isotropy is guaranteed. We show how this can be done in two- and three-dimensional lattices.     

基于层次分析法的空调冷热源方案优选

介绍了层次分析法的基本原理和计算步骤，将其应用于空调冷热源方案优选，得出了最优方案。     

First-Principles Studies the Lattice Constants and the Electronic Structures of Diluted Magnetic Semiconductors （In,Mn）As

Lattice constants and electronic structures of diluted magnetic semiconductors （ In, Mn ） As were investigated using the first principles LMTO-ASA band calculation by assuming supercell structures. Three concentrations of the 3 d impurities were studied （ x = 1/2, 1/4, 1/8）. The effect of varying Mn coucentrations on the lattice constants and the electronic structures are shown.     

重掺杂聚乙炔的导电机制

用改进的Ｎｗａｒｍａｎｎ方法制备出高聚乙炔膜，作碘和四氯化铁重掺杂。用扫描电镜观察到样品纤维间的接触，在链间产生接触垫垒，形成隧穿结，反式聚乙炔在重掺杂时会出现孤子晶格，在能隙中央形成孤子能带。在热激活下，带电弧子中的电子即会跳入附近的中性孤子。这有利于孤子能带中的电子，通过能带中接力式的跳跃，进入导带，成为自由电子。