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981.
982.
983.
X. G. Zhang P. Li G. Zhao D. W. Parent F. C. Jain J. E. Ayers 《Journal of Electronic Materials》1998,27(11):1248-1253
We have shown that threading dislocations can be removed from patterned heteroepitaxial semiconductors by glide to the sidewalls,
which is driven by the presence of image forces. In principle, it should be possible to attain highly mismatched heteroepitaxial
semiconductors which are completely free from threading dislocations, even though they are not pseudomorphic, by patterned
heteroepitaxial processing. There are two basic approaches to patterned heteroepitaxial processing. The first involves selective
area growth on a pre-patterned substrate. The second approach involves post-growth patterning followed by annealing. We have
developed a quantitative model which predicts that there is a maximum lateral dimension for complete removal of threading
dislocations by patterned heteroepitaxy. According to our model, this maximum lateral dimension is proportional to the layer
thickness and increases monotonically with the lattice mismatch. For heteroepitaxial materials with greater than 1% lattice
mismatch, our model predicts that practical device-sized threading dislocation-free regions may be realized by patterned heteroepitaxial
processing. 相似文献
984.
We use molecular statics simulations with the embedded atom method potential to delineate yielding (material instability) and buckling (structural instability) in gold nanowires deformed axially in compression. It is found that both local (stacking faults) and global instabilities occur when the gold nanowire yields but only global instabilities occur when the nanowire buckles. Furthermore strong surface effects reorient the lattice structure which significantly increases Young’s modulus in the axial direction and cause a nanowire of relatively small slenderness ratio (e.g., 14) to buckle. Upon complete unloading of the nanowires, the average axial stress and the total potential energy revert to their values in the reference configuration for the nanowires that buckled but not for the one that yielded. 相似文献
985.
增材制造路径对于成型质量、打印效率等具有重要影响。针对由多重因素造成的增材制造路径选择困难等问题,提出基于层次分析法的增材制造路径选择方法。通过调研得到17个主要评价指标,剔除耦合指标后归类为6大子指标,构建增材制造路径评价指标体系;以成型性能、开发性能、应用性能为主要指标,以常见的6种增材制造路径为备选方案,构建具有双层指标的增材制造路径选择层次模型,应用层次分析法相对权数计算的层位传递原理,对路径选择的多层判断矩阵进行一致性检验,确定备选增材制造路径方案总排序。分析结果显示分形路径综合性能最佳。 相似文献
986.
本文运用无标度的层次分析法计算教育评中指标体系的权重分配,此法不公能克服人为的主观型和期望型的影响,而且具有较强的科学性。 相似文献
987.
988.
利用W ey l群的性质及置换理论,讨论了Al型W ey l群作用下的子根系轨道生成的格.在同类型格中,研究了不同格之间的包含关系,给出了一个子根系是给定由μ生成的格L(μ)中一个元素的条件,最后讨论了按包含关系或反包含关系规定L(μ)的偏序时,L(μ)是否为几何格. 相似文献
989.
Kosaku Inagaki Toshikazu Kato Tadashi Hiroshima Toshiyuki Sakai 《Pattern recognition》1984,17(1):85-108
MACSYM is a hierarchical parallel processing system for pattern understanding applications. It features event-driven parallel processing for knowledge-based understanding of document images. The system is composed of a master processor, slave processors and a large shared memory, and is equipped with versatile communication facilities. The parallel processing software system M.UM has been developed on MACSYM. It supplies a parallel processing language MacC, an extended version of C, and supports the programming for document image understanding. The Japanese newspaper layout understanding system EXPRESS is being developed on MACSYM. It analyzes a newspaper image and extracts articles in a few seconds. 相似文献
990.
E. Guerrero M. Quintero R. Tovar T. Tinoco J. González J. Woolley P. Conflant 《Journal of Electronic Materials》1993,22(3):297-301
The T(z) diagram of the system Cd1−zMnzGa2Se4 was obtained from x-ray diffraction and differential thermal analysis measurements. It was found that at lower temperatures,
a single phase solid solution occurs across the whole compositional range and values of lattice parameters were determined
as a function of z. At higher temperatures, an order-disorder transition occurs, in the range 0 < z < 0.6 to a partially ordered
tetragonal structure and for 0.6 < z < 1. 0 to a disordered defect zinc-blende structure. In the T(z) diagram, both the ordering
boundary and the solidus curve appear to show discontinuities at z = 0.6, corresponding to the change in the disordered phase.
It is suggested that the symmetries of the terminal compounds are different one from the other. Optical absorption measurements
were made at 300 K to show the variation of the direct optical energy gap Eo with z, and again the values appear to divide into two parts below the above z = 0.6. 相似文献