Development of High Thermal Conductivity Aluminum Nitride Ceramic

AIN ceramics with densities varying from 3.18 to 3.30 g/cm³ and room-temperature thermal conductivities varying from 88 to 193 W/m K were produced. Different sintering conditions, packing powders, AIN powder sources, carbon additive, and sintering times were evaluated, and the key processing parameters which cause the differences in density and thermal conductivity were identified. SEM, TEM, and EDS were used to characterize the correlation between thermal conductivity, microstructure, and processing parameters. The important parameters which control the thermal conductivity of AIN ceramics are discussed.     

Ion implantation doping of OMCVD grown GaN

Doping by ion implantation using Si, O, Mg, and Ca has been studied in single crystal semi-insulating and n-type GaN grown on a-sapphire substrates. The n-and p-type dopants used in this study are Si and O; Mg and Ca, respectively. Room temperature activation of Si and O donors has been achieved after 1150°C annealing for 120 s. The activation of Mg and Ca acceptors is too low to measure at both room temperature and 300°C. Using higher doses to achieve a measurable p-type conduction increases the amount of damage created by the implantation. Rutherford back scattering measurements on this material indicate that the damage is still present even after the maximum possible heat treatment. Secondary ion mass spectrometry measurements have indicated a redistribution in the measured profiles of Mg due to annealing.     

Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1−xN (0≤x≤0.13)

Metal-semiconductor-metal (MSM) photodetectors have been fabricated on In_xGa_1−xN epitaxial films grown by metalorganic chemical vapor deposition within the composition range 0≤x≤0.13. The dark current and spectral response were measured for devices with a varying In mole fraction x. The devices, which had nominal finger widths and finger spacing of 5 μm, were biased with modest voltages in the range 2≤V_bias≤5 V. In general, turn-on wave-length and dark current increased with increasing x. Turn-on wavelengths ranged from λ=370 nm to 430 nm and dark current densities ranged from I_dark=2×10⁻² A/cm² (V_bias=5 V, x≈0.05) to 9×10⁴ A/cm² (V_bias=2 V, x≈0.13) depending on the In content, x, of the device active area.     

氮化镓低维纳米结构的制备与表征

主要是以氧化镓为原料,通过气相沉积法,制备出GaN纳米线和纳米带.通过X-射线衍射（XRD）,扫面电镜（SEM）和高分辨透射电镜（HRTEM）等测试手段对其形貌进行了表征和分析.研究了实验过程中工艺条件的改变对所制备GaN纳米结构形貌特征的影响.对两种GaN纳米材料的拉曼散射光谱进行了分析.     

Crack growth in aluminium alloy sheet material under flight-simulation loading

Crack propagation tests were carried out on 2024-T3 sheet specimens to study the effects of omitting low-amplitude cycles from the gust-dominated TWIST load sequence (MiniTWIST) and the removal of small load ranges from the manoeuvre-dominated FALSTAFF load sequence (short FALSTAFF). In other tests high-amplitude loads of TWIST and MiniTWIST were truncated at different levels. The results are compared with data from similar test programmes, including crack initiation. Attention is paid to unstationary crack growth retardation and a transient retardation during initial crack growth started by an artificial crack.     

静态水热脱铝处理对HZSM-5分子筛的结构、酸性和催化性能的影响

开发了一种静态水热脱铝的方法。HZSM-5经此法处理后,正戊烷的裂解活性增加,脱氢和芳构化性能加强。可用改变处理温度的方法来控制脱铝的程度。用XRD和吡啶吸附红外技术进行了研究。HZSM-5分子筛催化剂性能的变化用非骨架铝产生的强L酸中心来解释。     

换热器防腐蚀方法介绍

文章对换热器的不同保护方法进行了介绍 ,重点讨论了渗铝、渗锌两种方法。在室温～ 80℃自来水和 3.5 %NaCl水溶液中 ,与碳钢基体相比 ,渗铝层的电位发生了反转 ,因而在针孔部位会形成大阴极小阳极的局面 ,易发生点蚀 ;而在相同条件下渗锌层不出现上述点蚀现象 ,更适宜在换热器的应用     

Failure of Al-Mg-Si alloys in bending

The bendability of two Al-Mg-Si heat-treatable alloys was studied and compared with the performance of a non-heat-treatable Al-Mg alloy. A semi-guided wrap-bend tester consistent with ASTM E290 was used to obtain minimum bend radii and produce consistent bend radii for analysis of fracture mechanisms. Bending failure in these alloys was based on a surface roughening, or orange peel, process where the outer surface grains separated and produced depressions on the surface of the material. These depressions acted as notches that increased local stresses and eventually caused failure. The fracture was intergranular in nature, with a jagged crack progressing through the thickness of the material. Several factors that affect the bendability of AA6xxx alloys are quantified in this study. Critical elements regarding natural aging, artificial aging, deformation, and composition are discussed. A parameter of specific interest is the inclusion of copper in these alloys. Copper was added in an effort to increase the artificial aging response of selected alloys. This is of particular importance in the automotive industry because artificial aging occurs during the painting process, but adequate time and temperature is not provided to fully strengthen the alloys. It is believed by some automotive manufacturers that the inclusion of copper can have a negative effect on formability and bendability.     

铝活塞余热淬火和自然时效的应用研究

图 1所示的活塞试件 ,在开型时间为 5 0s～ 5 5s时 ,其表面温度为 (4 90± 5 )℃ ,可满足淬火要求。自然时效时间为 2 4天时 ,其机械性能可达到国标技术要求。这种新工艺有明显的经济效益。     

碳热还原法制备氮化硅粉体的反应过程分析

对以碳热还原法制备氮化硅粉体的ＳｉＯ２－Ｃ－Ｎ２系统进行化学反应热力学和动力学的分析，从而发现在氮气氛不足的条件下，这一系统的反应产物将由氮化硅变为碳化硅；在氮气充足的情况下，随着温度的升高，生成物中碳化硅的量也会逐步增加，这一分析结果通过实验得到了验证。