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81.
Recently, the successful synthesis of wafer-scale single-crystal graphene, hexagonal boron nitride (hBN), and MoS2 on transition metal surfaces with step edges boosted the research interests in synthesizing wafer-scale 2D single crystals on high-index substrate surfaces. Here, using hBN growth on high-index Cu surfaces as an example, a systematic theoretical study to understand the epitaxial growth of 2D materials on various high-index surfaces is performed. It is revealed that hBN orientation on a high-index surface is highly dependent on the alignment of the step edges of the surface as well as the surface roughness. On an ideal high-index surface, well-aligned hBN islands can be easily achieved, whereas curved step edges on a rough surface can lead to the alignment of hBN along with different directions. This study shows that high-index surfaces with a large step density are robust for templating the epitaxial growth of 2D single crystals due to their large tolerance for surface roughness and provides a general guideline for the epitaxial growth of various 2D single crystals. 相似文献
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纳米TiO2粉晶的光学特性研究 总被引:14,自引:0,他引:14
用溶胶-凝胶方法(Sol-gel)制备了平均粒度为22nm的纳米TiO2粉晶.用X射线衍射(XRD)分析了粉晶的结构变化,并用红外光谱法(IR)及紫外-可见光谱法(UV-VIS)对粒子的光学特性进行了分析.结果表明:经不同温度热处理的纳米TiO2的光学性能随其晶型转变及粒子尺寸的变化而有着显著变化,与粗晶TiO2相比,纳米TiO2粒子在纳米尺度内,IR吸收边有明显红移和蓝移并存现象,而UV-VIS吸收边随粒子尺寸减小发生蓝移,表现出量子尺寸效应. 相似文献
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Experimental results are reported of selective diffusion of boron in 6H−SiC. Photoluminescence spectroscopy scanning electron
microscopy cathodoluminescence imaging, secondary-ion mass spectroscopy optical microscopy, and stain-groove technique were
used to characterize the selectively doped regions fabricated by diffusion from the vapor phase through a graphite mask. Local
p-doped regions of dimensions down to ∼20 μm in diameter were formed on an n-type substrate using the graphite mask. Maximum
concentration of boron atoms at the surface, obtained by SIMS, varied from 3×1019 cm−3 to 6×1019 cm−3, depending upon the temperature of diffusion, while the p-n junction depth measured by the stain-groove technique varied
from 0.5 μm to 1.2 μm. Planar p-n junction diodes fabricated on the diffused regions exhibited good rectification characteristics
with a breakdown voltage of about 1000 V. 相似文献
88.
基于第一性原理,研究了铁链单侧边界钝化型的锯齿形氮化硼纳米带(简称为Fe-terminated ZBNNRs)和铁链连接型的锯齿形氮化硼纳米带(简称为Fe-jointed ZBNNRs)的电子结构及磁性。Fe-terminated ZBNNRs 对于不同带宽的BN纳米带都是半导体型的,而Fe-jointed ZBNNRs 对于不同带宽的BN纳米带则为半金属型。这两种
结构各自的磁性主要都是来自于所掺杂的铁原子。Fe-jointed ZBNNRs 的半金属性源自Fe原子的3d轨道与N原子的2p轨道间的强耦合作用。通过分子动力学模拟,证实了该
结构在常温下可以稳定存在。Fe-jointed-ZBNNRs 对于两种不同自旋方向电子的选择过滤作用可以被应用于自旋电子学器件的设计。其它各种不同的过渡金属所形成的连接型的锯齿形氮化硼纳米带(简称为M-jointed ZBNNRs)既可以是金属型的、半金属型的,也可以是半导体型的。 相似文献
89.
Ram Kumar K. Gopalakrishnan Irshad Ahmad C. N. R. Rao 《Advanced functional materials》2015,25(37):5910-5917
Composites of boron nitride (BN) and carboxylated graphene are prepared for the first time using covalent cross‐linking employing the carbodiimide reaction. The BN1–xGx (x ≈ 0.25, 0.5, and 0.75) obtained are characterized using a variety of spectroscopic techniques and thermogravimetric analysis. The composites show composition‐dependent electrical resistivity, the resistivity decreasing with increase in graphene content. The composites exhibit microporosity and the x ≈ 0.75 composite especially exhibits satisfactory performance with high stability as an electrode in supercapacitors. The x ≈ 0.75 composite is also found to be a good electrocatalyst for the oxygen reduction reaction in fuel cells. 相似文献
90.
Kwang‐Seong Choi Haksun Lee Hyun‐Cheol Bae Yong‐Sung Eom Jin Ho Lee 《ETRI Journal》2015,37(2):387-394
A novel interconnection technology based on a 52InSn solder was developed for flexible display applications. The display industry is currently trying to develop a flexible display, and one of the crucial technologies for the implementation of a flexible display is to reduce the bonding process temperature to less than 150°C. InSn solder interconnection technology is proposed herein to reduce the electrical contact resistance and concurrently achieve a process temperature of less than 150°C. A solder bump maker (SBM) and fluxing underfill were developed for these purposes. SBM is a novel bumping material, and it is a mixture of a resin system and InSn solder powder. A maskless screen printing process was also developed using an SBM to reduce the cost of the bumping process. Fluxing underfill plays the role of a flux and an underfill concurrently to simplify the bonding process compared to a conventional flip‐chip bonding using a capillary underfill material. Using an SBM and fluxing underfill, a 20 μm pitch InSn solder SoP array on a glass substrate was successfully formed using a maskless screen printing process, and two glass substrates were bonded at 130°C. 相似文献