弱凝胶调驱降维数值模拟方法研究

目前用于弱凝胶调驱的化学驱软件大多存在计算速度慢、数值弥散现象严重的问题,为了提高弱凝胶调驱数值模拟的速度和精度,提出了降低维数的模拟方法。利用追踪流线的方法,将弱凝胶调驱的三维渗流问题,转化为沿流线计算饱和度的一维问题,大大降低了求解饱和度方程组中方程的数目,从而提高了计算速度。利用该方法,模拟了玉门老君庙油田一个试验井区的水驱开发历史,优化了弱凝胶调驱的注入浓度、注入速度及注入体积等参数,并预测了弱凝胶调驱的动态,预测该方案可提高采收率7.6%。     

焦化生产中含硫容器自燃氧化倾向性分析

分析了炼焦化工生产过程中硫的分布和存在形态、硫铁化合物自燃的影响因素,提出了防止储罐、管道等设备自燃事故的安全控制方法.     

胍基聚合物的合成及抗菌性能

采用熔融缩聚的方法合成了聚亚己基胍盐酸盐（PHGC）及聚亚己基双胍盐酸盐（PHBG）。应用气相渗透压法（VPO）及粘度法测定了其分子质量，应用元素分析，FT－IR，XPS分析了聚合物的化学组成，抗菌活性的研究结果表明所合成的胍基聚合物具有较强的而且广谱的抗菌性能。     

超细氧化锌粉体的制备及尺寸控制

根据气相化学反应法 (CAD)制备超细粉的原理 ,从低品位氧化锌矿中采用火法冶金方法直接制备超细氧化锌粉 ,对所得氧化锌的粒度尺寸、微观结构和粒度分布进行测试 ;考察了冷却强度以及收集装置对超细氧化锌粒度及粒度分布的影响 ;讨论了氧化锌粉体团聚的原因及对策、试验条件对氧化锌尺寸的控制等     

注硼中子寿命测井注硼工艺优化设计

注硼中子寿命测井是一项水淹层测井新技术 ,对老油田的产层分析评价、剩余油含量估算等方面发挥了重要的作用。但测井施工时 ,往往由于注硼工艺不当导致硼酸的渗吸量难以准确反映地层可动水的含量 ,从而产生解释上的困难和误区。在渗流与扩散理论相结合的基础上 ,结合华北油田的施工实践 ,介绍了确定注硼管柱、硼酸用量、注硼压力以及硼酸扩散时间的基本原则和实际经验 ,为工艺的优化设计提供了一些方法与思路     

纳米碳管阵列

在概括纳米碳管阵列特异的场发射效应及在场发射器方面应用前景的基础上，介绍了合成纳米碳管阵列的研究历程以及化学气相沉积法在纳米碳管阵列合成方面的重要意义，就当前纳米碳管阵列的快速合成与低温合成两个发展方向进行了概述，并指出等离子体化学气相沉积法能有效地用于纳米碳管阵列的低温合成。     

利用自生气的油气田开发开采工艺技术概况

油气田开发工艺技术中使用的自生气有N2、O2、CO2、ClO2和混合气五大类型，来源于化学反应和微生物的代谢产物。自生N2主要来自亚硝酸盐和铵盐的氧化还原反应。自生O2则来自过硫酸盐和过氧化物的高温分解。白生CO2来自碳酸盐与酸的反应及含氮类有机物的高温分解。自生混合气包括高能气体和生物气，高能气体是火药或炸药爆燃产生的混合气，生物气是微生物代谢产生的混合气。自生气工作液在油气田现场已应用于固井、射孔、解堵、压裂、调剖和三次采油等广阔的领域。本文概述油气田开发开采中利用五大类自生气的19项工艺技术。参43.     

Review of The chemically dependent: Phases of treatment and recovery.

Reviews the book, The chemically dependent: Phases of treatment and recovery edited by Barbara C. Wallace (see record 1992-98403-000). While this book is ambitious, interesting, educational, and useful, it is also disappointing, repetitious, and incomplete. Because it tries to accomplish so much, it may appear to have succeeded too little. This book is organized around, and explicative of, several basic ideas which might have been controversial if not heretical had this book been published ten years ago. Section I, purporting to link specific "phases of recovery" to particular forms and functions of treatment, will certainly be useful for novice clinicians but falls short of its overstated goals and is thereby disappointing. Section II is a collection of moderately redundant chapters describing the etiology and treatment of substance abusers from the viewpoints of psychoanalytic, psychodynamic, ego psychology, and object-relations theorists and therapists. Section III focuses on cognitive-behavioral, self-help, and relapse-prevention treatments. Section IV is quite uneven in quality of writing and applicability of content, and could have benefited from closer editorial scrutiny or selectivity. The final section focuses on special needs of particular subpopulations of substance abusers: African-Americans, prison inmates, HIV/AIDS patients, persons who are homeless, those who have been sexually and physically abused, and others. According to the reviewer this is not the best book on substance abuse treatment, but it does present some clinically useful ideas and it is worth reading. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

CP-3助剂在嘴棒成型纸中的应用

介绍CP - 3助剂的特性、用法以及在嘴棒纸中的作用。     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.