Detailed structural analysis of GaAs grown on patterned Si

The growth of GaAs on patterned Si substrates is essential for the integration of GaAs and Si devices. Moreover this growth may have to be done in wells to planarize the surfaces of the Si and GaAs devices for their interconnection. In this study, GaAs is grown by MBE on such patterned Si substrates, with window width down to 3 μm, and a complete structural characterization of the material is made by electron microscopy. In every case, SEM observations show a very good definition of the pattern by the contrast of the flat surface of the monocrystalline GaAs compared to the very rough surface of the polycrystalline GaAs. Cross-sectional observations by STEM or TEM on non-etched samples reveal that the quality of the monocrystalline GaAs is at least as good in terms of defect density as that of the standard GaAs on Si. On samples etched with a plasma to produce wells, grains often form against the Si sidewall. Chemical etching with lateral etching avoids contact of the growing GaAs with the Si sidewall and subsequent grain formation. The crystalline quality obtained on etched samples is not as good as on non etched samples. A way of preparing the wells to improve this crystalline quality is proposed.     

Study on Energy Stored in Thin Layers of MEMS Ultrasonic Resonance Separator

The particles suspending in liquid suffer acoustical radiation force from ultrasonic field. The force may cause particles movement and has special advantage to separate particles from liquid in Micro Electro Mechanical Systems （MEMS）. It is important to improve the energy stored in liquid layer so as to increase separation ability for decreasing drive demand in MEMS. Resonance may hugely increase the magnitude and generally be employed in micro separator. The summits of admittance spectrum show the resonance frequencies. It may come from resonance in one layer or multi layers in micro separator. This paper studies the difference of energy stored in layers at each rein frequency. It provides the way to select the most effect separation frequency other than admittance spectrum.     

ZnO纳米线光学特性测试的倏逝波耦合

使用纳米氧化硅光纤探针,利用倏逝波耦合方法,将紫外到红外的激光成功地耦合进单根ZnO纳米线,耦合效率可达25%.实验观测了单根纳米线的荧光特性,发现ZnO纳米线光传输损耗很低.研究证明:采用透镜聚焦激发纳米线发光的传统耦合方法,只能使用特殊激发波长的光;而倏逝波耦合方法具有高效、适用性强的特点,在半导体纳米线和纳米带的光学特性研究中有广泛的应用前景.     

VBR Video Source Characterization and a Practical Hierarchical Model

There are many ways to build up traffic models for VBR video sources. A frequently applied methodology is to use mathematical analysis based on realistic assumptions to set up a source model that generates traffic according to a stochastic process. In this case, the critical issue is the validation of the synthetic trace by comparing statistics to results obtained from measurements on the real source. In this paper, we choose a different and more practical approach to model the behavior of the real traffic source. Our model building philosophy is that we analyze and understand what happens with the video information on its way from the ingress to the multimedia terminal to the egress of the network card. Throughout this journey the information is processed by several mechanisms and we build an empirical model step by step based on our measurement-based observations. Besides understanding the traffic generation procedure, statistical analysis of VBR traffic traces captured from a number of video sequences was also carried out in several scenarios. Using the knowledge of encoding, encapsulation and scheduling processes and results of the trace analysis, a hierarchical source model is set up for modeling the multimedia terminal. Thereby our model imitates the generation of video frames and the inner working of each level of protocol hierarchy and tries to reproduce the complex behavior of the real source. We use the leaky bucket analysis for verification of the model in order to capture directly the behavior of the traffic in a queue.     

基于小波能量系数和神经网络的管道缺陷识别

利用基于小波能量系数的BP神经网络方法对管道焊缝和管道凹槽进行分类识别。建立了导波检测系统,采集了管道凹槽缺陷和焊缝的多组检测信号样本,从信号样本中提取出小波能量系数,并将小波能量系数应用于BP神经网络的训练与识别。结果表明,该方法对管道缺陷的识别准确率较高,且识别效果稳定,在随机抽取信号样本进行的5次试验中,对焊缝和凹槽的最低识别准确率分别为92%和98%,最高识别准确率均为100%。     

Generalization of the thermal model of infrared radiation sensors

In many theories and applications, generalized models can give a good head start for further research where the implementation of new elements and/or boundary conditions could become quite complex. In this paper the development of a compact thermal model of an infrared sensor will be presented. This thermal model includes not only the thermal resistances and capacitances of the sensor structure itself but the radiative and convective thermal resistances to the ambience and between the sensor plate and the heat source (thermal transfer impedance) which is important when the heat source and the sensor are in close proximity. Limitations and the applicability of the proposed model are also discussed. We also aim to present how the proposed model can be used for other IR sensor structures as well.     

多轴超声C扫描系统在车辆负重轮检测中的应用

采用多轴超声水浸C扫描系统检测车辆负重轮的内部缺陷,对扫描工艺参数、曲面路径快速编制进行了研究,获得了最佳检测工艺参数及快速编制曲面跟踪路径方法。结果表明,曲面跟踪C扫描检测是车辆负重轮理想的检测方法,不仅有利于缺陷的检出,而且检测结果准确、检测效率高,适合大批量作业。     

一种超声换能器阻抗匹配的研究

为了便于探鱼声纳更好的应用于小渔船,其换能器基阵应简易轻便,易于安装,因此把换能器的匹配网络放在干端,减小换能器基阵的体积与重量。为解决长线传输过程中换能器的阻抗匹配,提出了一种匹配方法,在实际应用中很好地解决了超声换能器的宽带阻抗匹配。     

超声跟踪TeO2器件新设计及其性能比较

在超声跟踪反常器件设计中,用最小二乘法确定相邻换能器中心距s和超声偏置角γ_o两参数的近似值,并通过计算机程序完成精细调节,得到s和γ_o的优化设计值。计算结果表明,用最小二乘法得到的s和γ_o的近似值比过去用中心频率处△Γ和△Θ_α的函数值及一阶导数值相等所得到的近似值更接近于s和γ_o的优化值。因而优化过程更趋简单。将此新设计方法运用到TeO_2器件的具体设计中,并在相同条件下与正常声光器件的性能作比较。比较结果表明,对于相同的倍频程带宽和通带内1.5dB的不均匀性,反常器件的声光互作用长度较正常器件提高40%。     

Real-time heating and power characterization of cells in standard cell designs

In today's digital electronic integrated circuits device heating is one of the most critical issues. Overheating can cause failures in functionality and device malfunction. In certain circumstances overheating of ICs can cause physical destruction of the device itself. This paper introduces a solution to determine cell and gate heating curves across the standard cell IC's surface. The presented methodology and toolset is tightly integrated into standardized logic simulator engines thus providing digital circuit designers a low-level, cell-resolution temperature distribution map during logic simulations. Actual temperatures of each consisting cell of the design can be monitored throughout the whole logic simulation. By being able to monitor temperatures of digital cells during initial simulations, it allows us to detect hot-spots and overheating caused malfunctions far before manufacture. By using the spatial location and temperature magnitude of hot-spots acquired from the presented methodology, place and route (P&R) tools can be driven to change cell placement and routing in order to avoid heating caused failures. Additionally, cooling solutions can be developed using the simulated temperature maps of the IC's surface. This paper also presents various aspects of power characterization methods which were used throughout the experiments.