Connecting the second exhaust-heat boiler to the operating first one under the conditions of flow circuits of combined-cycle plants with two gas-turbine units and one steam turbine

Problems arising with connecting the second exhaust-heat boiler to the first exhaust-heat boiler under load in the case of flow circuits of combined-cycle plants of type PGU-450 are considered. Similar problems exist for two-boiler single-turbine units of type PGU-325 and for two-boiler single-turbine units of traditional steampower plants with an output of 200–300 MW upon connection of the second furnace of a two-furnace boiler to the operating first furnace. Analysis of the temperature-induced stressed state and of the cyclic strength of thick-walled elements of the steam-water conduit of PGU-450 and of two-furnace boilers of two-boiler single-turbine units with an output of 200–300 MW (the check valve, the inlet header of the water economizer) is used for determining the steam temperature differences in the high-pressure conduits to the steam turbine and the order of connection of the second exhaust-heat boiler to the operating fist one. Modes of enabling a two-boiler single-turbine unit of a combined-cycle plant, which are most “rigid” from the standpoint of thermal strength, are determined. __________ Translated from élektricheskie Stantsii, No. 2, February 2006, pp. 11–17.     

Threshold and growth mechanism of fatigue cracks under mode II and III loadings

ABSTRACT The fatigue crack growth behaviour of 0.47% carbon steel was studied under mode II and III loadings. Mode II fatigue crack growth tests were carried out using specially designed double cantilever (DC) type specimens in order to measure the mode II threshold stress intensity factor range, ΔK_IIth. The relationship ΔK_IIth > ΔK_Ith caused crack branching from mode II to I after a crack reached the mode II threshold. Torsion fatigue tests on circumferentially cracked specimens were carried out to study the mechanisms of both mode III crack growth and of the formation of the factory‐roof crack surface morphology. A change in microstructure occurred at a crack tip during crack growth in both mode II and mode III shear cracks. It is presumed that the crack growth mechanisms in mode II and in mode III are essentially the same. Detailed fractographic investigation showed that factory‐roofs were formed by crack branching into mode I. Crack branching started from small semi‐elliptical cracks nucleated by shear at the tip of the original circumferential crack.     

氧化铝熟料单筒冷却机节能技术改造

本对影响氧化铝熟料单筒冷却机冷却效率的因素进行了分析，并提出了相应的节能技术改造措施，取得了明显的节能效益。     

芳烃抽提装置技术改造

由于中国石化锦西石化分公司600kt／a连续重整装置的建设，芳烃抽提装置的原料由原来的脱戊烷油变为Ce组分。为此，对抽余油水洗塔和芳烃分离部分的苯塔塔盘，以及苯塔塔顶和塔底抽出部分进行了改造，更换部分机泵和增加变频泵，并将常规仪表改为DCS控制。改造后装置实现一次开车成功，生产出合格产品。抽余油中总芳烃含量小于0．1％，苯回收率达到99%以上。     

Damage mechanism in weldment of 2.25Cr-1Mo steel under creep-fatigue loading

The purpose of this study is to clarify damage process of “Type IV cracking” in weldment of a 2.25Cr-1Mo steel and to propose a micro damage prediction method. From continuous observation under a creep-fatigue test, it was found that spherical shape voids initiated and grew on grain boundaries in fine grain region and these voids grow continuously by changing their shape to crack-like. Both spherical and crack-like void growth rate equations were derived from the proposed void growth model. It was indicated that measured void growth rate under the creep-fatigue loading was well predicted by the growth rate equations.     

催化重整装置的扩能改造

介绍湛江东兴炼油厂的重整装置由200kt／a扩能至300kt／a中有关催化重整反应动力学模拟计算软件的应用、反应工艺技术的改造、装置标定的情况。结合装置实际情况，采用两段装填、两段混氢技术提升了装置的技术水平。标定结果表明，改造后的装置达到了预期目的。     

FPGA在数字通信系统中的应用

文中介绍了使用ACEXlK器件实现的一种Manchester编译码器。     

变频器的现状与发展动向

本文从开关元件、调制策略、控制保护、主电路拓扑及智能化五个方面，综述了变频器的现状与发展动向。     

BPxN1-x薄膜的制备及磷元素对其光学能隙的影响

本文从应用出发，选择光学石英为衬底，采用热丝辅助射频化学气相沉积的方法沉积BPxN1—x薄膜，对样品进行了X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外—可见等测试。XRD、SEM结果显示薄膜多晶态，表面形貌随时间变化，最终为胞状；紫外—可见光光谱结果显示BPxN1—x薄膜的紫外吸收边随沉积时间的加长、PH3流量的增加而向长波长方向移动。因此，该材料的光学能隙可以通过生长工艺适当调整。另外，BPxN1—x薄膜与液晶层能较好匹配等特性更使其适用于紫外空间光调制器。     

一维ZnO纳米结构的电子场发射研究

在大量制备一维ZnO纳米结构的基础上,研究了这些纳米结构的场发射性能。对于四角状ZnO纳米结构,获得1.0m Ac/m2的电流密度只需要4.5V/μm的电场;对于线状Z nO纳米结构,获得1.0mAc/m 2的电流密度需要6.5V/μm的电场。由于其特殊的结构,四角状ZnO一维纳米结构在真空电子器件方面有很好的应用前景。