A process is described for creating local oxidation of silicon structure (LOCOS) structures in silicon carbide using enhanced
thermal oxidation by argon implantation. Thicker oxides were created in selective regions by using multiple energy argon implants
at a dose of 1 × 1015 cm−2 prior to thermal oxidation. Atomic force microscopy was used to analyze the fabricated LOCOS structure. 相似文献
Corrugated electret membranes are used in a micromachined silicon microphone. The membranes consist of a permanently corona-charged double layer of silicon dioxide and silicon nitride, known to have excellent charge-storing properties. This electret can replace the external bias needed for condenser microphones. The well-known LOCOS technique—also combined with dry etching—is used for the first time to fabricate membranes with corrugation depths of several microns. The membrane thickness amounts to 600 nm.
The interferometrically measured center deflection is up to 40 nm/Pa for diaphragms with four corrugations of up to 3.3 μm depth and a size of AM=1 mm2. This high mechanical sensitivity limits the dynamic range to sound pressures below 50 Pa. The obtained mechanical sensitivities are in excellent agreement with the theory.
The most compliant corrugated diaphragms result in a microphone sensitivity of 2.9 mV/Pa, an equivalent noise level of 39 dB(A) and a total harmonic distortion below 1.7% at 28 Pa (123 dB SPL). The corrugation depth in the sensors has been only 1.3 μm. All sensors cover the whole audio and low ultrasonic range. The temperature coefficient is between 0.05 and 0.1 dB/K. 相似文献