合成介质对PEDOT催化染料敏化太阳电池光阴极性能的影响

采用聚3,4-乙烯二氧噻吩(PEDOT)/FTO为对电极,研究了合成介质对循环伏安法电聚合制备的PEDOT/FTO对电极性能的影响。通过SEM、CV、EIS、Tafel曲线,并首次采用SECM方法对所制备的对电极的电催化性能进行了表征。结果表明:在LiClO4水溶液和1-丁基-3-甲基四氟硼酸盐离子液体(IL)中制备的光阴极具有良好的电催化性能。J-V测试曲线表明,在LiClO4水溶液和IL中制备的光阴极所组装的DSSC器件的光电转化效率分别达6.4%和6.6%,接近于同等条件下以Pt对电极构建的DSSC器件的光电转化效率。     

CoNi2S4 Nanoparticle/Carbon Nanotube Sponge Cathode with Ultrahigh Capacitance for Highly Compressible Asymmetric Supercapacitor

Compared with other flexible energy‐storage devices, the design and construction of the compressible energy‐storage devices face more difficulty because they must accommodate large strain and shape deformations. In the present work, CoNi₂S₄ nanoparticles/3D porous carbon nanotube (CNT) sponge cathode with highly compressible property and excellent capacitance is prepared by electrodepositing CoNi₂S₄ on CNT sponge, in which CoNi₂S₄ nanoparticles with size among 10–15 nm are uniformly anchored on CNT, causing the cathode to show a high compression property and gives high specific capacitance of 1530 F g⁻¹. Meanwhile, Fe₂O₃/CNT sponge anode with specific capacitance of 460 F g⁻¹ in a prolonged voltage window is also prepared by electrodepositing Fe₂O₃ nanosheets on CNT sponge. An asymmetric supercapacitor (CoNi₂S₄/CNT//Fe₂O₃/CNT) is assembled by using CoNi₂S₄/CNT sponge as positive electrode and Fe₂O₃/CNT sponge as negative electrode in 2 m KOH solution. It exhibits excellent energy density of up to 50 Wh kg⁻¹ at a power density of 847 W kg⁻¹ and excellent cycling stability at high compression. Even at a strain of 85%, about 75% of the initial capacitance is retained after 10 000 consecutive cycles. The CoNi₂S₄/CNT//Fe₂O₃/CNT device is a promising candidate for flexible energy devices due to its excellent compressibility and high energy density.     

An inexact hybrid projection-proximal point algorithm for solving generalized mixed variational inequalities

In this paper, we investigate an inexact hybrid projection-proximal method for solving a class of generalized mixed variational inequalities in Hilbert spaces. We construct a general inexact hybrid projection-proximal point algorithm, in which an inexact relaxed proximal point step is followed by a suitable orthogonal projection onto a hyperplane. Under some suitable conditions concerned with the pseudomonotone set-valued mapping T, the nonsmooth convex function f and the step size λ_k, we prove the convergence of the inexact hybrid projection-proximal point algorithm for solving generalized mixed variational inequalities in Hilbert spaces.     

Strong stability of the mono-tubular heat exchanger equation with output feedback

We investigate asymptotic behavior of the C₀-semigroup T(t) associated with the mono-tubular heat exchanger equation with output feedback by a perturbation method. It is shown that T(t) is bounded if a constraint is satisfied by the parameters and the spatial distribution function. Further, applying the Arendt-Batty-Lyubich-Vu theorem, a criterion is established to judge strong stability of T(t).     

一种基于码本聚类的低复杂度用户选择算法

现有块对角化(BD)预编码系统用户选择算法较少考虑利用已选用户与剩余用户之间的关系来排除不可选用户.针对这点不足,给出了一种采用码本聚类的低复杂度用户选择算法( CodeGreedy算法).该算法采用弦距离刻画用户信道的相关性,以此为依据将用户划分到不同码本空间中,聚集在同一码本空间的用户信道具有较强的相关性,形成互斥...     

Δ3-1,2,4—噻二唑类化合物的量子化学及构效关系研究

Δ3-1,2,4—噻二唑类化合物具有抑制黄瓜霜霉病毒的杀菌活性。本文用半经验PM3方法对25个该类化合物进行了量子化学计算,并依据原子的净电荷、前沿轨道能级、轨道主要成分及原子在前沿轨道中所占比重等计算结果和多重回归分析讨论了该类化合物的活性部位,为该类化合物结构与活性的研究奠定了理论基础。     

用于半自动视频对象提取的自适应网格图像分割

随着MPEG－4标准的发展和基于内容的视频处理研究,视频对象平面（VOP）的有效产生成为一个关键问题。本文提出一种基于区域的自适应网格彩色图像分割方法,可用于获得半自动视频对象跟踪和提取所需的初始VOP。该方法利用CIE L＊a*b＊色彩空间的特征量,对视频序列的第一帧进行三角形网格的分裂与合并。对MPEG－4标准测试序列的分割实验取得了较好的结果。     

轮廓字网格编织带修饰效果的实现

利用计算机进行设计各种字形修饰效果一直是计算机图形学的重要内容之一.本文给出了在轮廓字表面上构造网格点,基于这些网格点进行Delaunay三角剖分,并转换为3-4网格,最后在网格上实现编织带修饰效果的具体实现方法.其中3-4网格由良构的四边形单元和少量辅助三角形单元构成,在其上实现了较好的编织带修饰的效果.     

混合碳四的来料加工

分析了混合碳四中3种关键组分超标对丁二烯生产的不利影响，提出了外加工混合碳四过程中具体的应对措施和解决方案。     

Growth and characterization of Si doped vapor phase epitaxial GaAs for mesfet

This paper describes the Si-doping of GaAs that was grown using the AsCl₃:H₂:GaAs, Ga Chemical vapor deposition process. The doping sources were AsCl₃:SiCl₄ liquid solutions which proved to be highly reproducible for Si doping within the range, 1×1O¹⁶ to 2×10¹⁹ cm^?3. Incorporation of Si into the GaAs apparently occurs under near equilibrium conditions. This point is considered in detail and the consequences experimentally utilized to grow n, n+ bilayers using a single AsCl₃:SiCl₄ doping solution. Si impurity profiles based upon differential capacitance and SIMS data are presented. These can be very abrupt for n, n⁺ structures with order of magnitude changes occurring within 500 Å. For the 1×10₁₆ to 8×l0¹⁸ cm^?3 doped samples the mobilities at 78 and 298°K are comparable to the higher values reported for GaAs thin films grown by CVD. Power FET devices made from this material have demonstrated an output density of 0.86 watts/mm at 10 GHz.