Homopolymer Nanolithography

Future progress in nanoscience and nanotechnology necessitates further development of versatile, labor‐, and cost‐efficient surface patterning strategies. A new approach to nanopatterning is reported, which utilizes surface segregation of a smooth layer of an end‐grafted homopolymer in a poor solvent. The variation in polymer grafting density yields a range of surface nanostructures, including randomly organized pinned spherical micelles, worm‐like structures, networks, and porous films. The capability to use the polymer patterns for site‐specific deposition of small molecules, polymers, or nanoparticles is shown. This versatile strategy enables patterning of curved surfaces with direct access to the substrate and no need in changing polymer composition to realize different surface patterns.     

Monitoring the Dynamic Process of Formation of Plasmonic Molecular Junctions during Single Nanoparticle Collisions

The capability to study the dynamic formation of plasmonic molecular junction is of fundamental importance, and it will provide new insights into molecular electronics/plasmonics, single‐entity electrochemistry, and nanooptoelectronics. Here, a facile method to form plasmonic molecular junctions is reported by utilizing single gold nanoparticle (NP) collision events at a highly curved gold nanoelectrode modified with a self‐assembled monolayer. By using time‐resolved electrochemical current measurement and surface‐enhanced Raman scattering spectroscopy, the current changes and the evolution of interfacial chemical bonding are successfully observed in the newly formed molecular tunnel junctions during and after the gold NP “hit‐n‐stay” and “hit‐n‐run” collision events. The results lead to an in‐depth understanding of the single NP motion and the associated molecular level changes during the formation of the plasmonic molecular junctions in a single NP collision event. This method also provides a new platform to study molecular changes at the single molecule level during electron transport in a dynamic molecular tunnel junction.     

A Two‐Stage Annealing Strategy for Crystallization Control of CH3NH3PbI3 Films toward Highly Reproducible Perovskite Solar Cells

The solvent‐engineering method is widely used to fabricate top‐performing perovskite solar cells, which, however, usually exhibit inferior reproducibility. Herein, a two‐stage annealing (TSA) strategy is demonstrated for processing of perovskite films, namely, annealing the intermediate phase at 60 °C for the first stage then at 100 °C for the second stage. Compared to conventional direct annealing temperature (DHA) at 100 °C, using this strategy, MAPbI₃ films become more controllable, leading to superior film uniformity and device reproducibility with the champion device efficiency reaching 19.8%. More specifically, the coefficient of variation of efficiency for 49 cells is reduced to 5.9%, compared to 9.8% for that using DHA. The TSA process is carefully studied using Fourier transform infrared spectroscopy, X‐ray diffraction, and UV–vis absorption spectroscopy. It is found that in comparison with DHA the formation of hydrogen bonding and crystallization of perovskite are much slower and can be better controlled when using TSA. The improvements in film uniformity and device reproducibility are attributed to: 1) controllable MAPbI₃ crystal growth stemming from the progressive formation of hydrogen bonding between methylammonium and halide; 2) suppression of intermediate phase film dewetting, which is believed to be due to its decreased mobility at the initial low‐temperature annealing stage.     

Memory effects of all‐solution‐processed oxide thin‐film transistors using ZnO nanoparticles

Abstract— Non‐volatile memory effects of an all‐solution‐processed oxide thin‐film transistor (TFT) with ZnO nanoparticles (NPs) as the charge‐trapping layer are reported. The device was fabricated by using a soluble MgInZnO active channel on a ZrHfO^x gate dielectric. ZnO NPs were used as the charge‐trapping site at the gate‐insulator—channel interface, and Al was used for source and drain electrodes. Transfer characteristics of the device showed a large clockwise hysteresis, which can be used to demonstrate its memory function due to electron trapping in the ZnO NP charge‐trapping layer. This memory effect has the potential to be utilized as a memory application on displays and disposable electronics.     

Parallelization of a dynamic SVD clustering algorithm and its application in information retrieval

We describe an implementation of a parallel document clustering scheme based on latent semantic indexing, which uses singular value decomposition. Given a set of documents, the clustering algorithm is dynamic in the sense that it automatically infers the number of clusters to be output. The parallel version has been implemented on a LAN and on a dual‐core system. Experimental evaluation of the algorithm shows an average speed‐up of 6.22 for the LAN implementation and an average speed‐up of 3.71 for the dual‐core implementation, while still maintaining a precision and recall in the range [0.85, 1]. To put these implementations in the context of information retrieval, we use the parallel clustering algorithm and develop a document similarity search system. The similarity search system shows good performance in terms of precision and recall. Copyright © 2010 John Wiley & Sons, Ltd.