Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition

We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied, the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates.     

Si衬底上横向外延GaN材料的微结构和光学性质的研究

用氢化物气相外延 (HVPE)方法在Si(III)衬底上成功横向外延生长出晶体质量较好的GaN薄膜材料。透射电子显微镜 (TEM )的研究结果表明 ,横向外延区域GaN的位错密度明显减小。由于SiO2 掩膜腐蚀角的不同 (分别为 90°和 6 6°) ,导致了横向外延GaN材料一些独特的微观形貌。微区拉曼光谱由数百条拉曼散射曲线组成 ,每一条曲线有三个振动模 ,分别对应Si振动模式 (5 2 0cm- 1) ,E2 模式 (5 6 6cm- 1)和E1(LO)模式(732cm- 1)。在垂直条纹方向 ,峰位和峰宽没有明显的变化 ,而峰强约 5 μm会发生周期性变化     

In Situ Formation of a Novel Nanocomposite Structure Based on MCM-41 and Polyethylene

M41S materials are prepared by in situ assembly of inorganic precursors and organic template and can be viewed as nanocomposites of the siliceous phase and organic surfactant. Calcination of these precursors gives the M41S materials that have been used to prepare novel nanocomposite structures, in which the organic phase inside the nano-sized pores is isolated by the nano-sized inorganic pore walls. The nanocomposite structures can be formed by in situ polymerization of monomers inside the channels. Polymerization of ethylene takes place inside the nano-sized pores, producing the desired nanocomposite structure. The resulting polyethylene was found to be a mixture of crystalline and amorphous phases.     

多任务调度算法在单片机控制系统中的应用

为了满足单片机控制系统的复杂要求 ,提出了多任务调度算法 ,通过与单任务程序结构的对比和分析 ,详细说明了多任务调度算法的实现 ,指出了应用该算法的必要性 ,并且以科研生产的实例说明其具体应用。     

从加氢脱硫（HDS）循环气中脱除H2S和C1—C4组分

简要介绍了炼油厂生产低硫燃料过程中处理循环氢气物流中的H2 S和轻质烃的几种方法 ,并通过实验对比论述非水溶型硫回收技术可降低氢气损失、增大轻质烃脱除率的优越性     

基于B/S模式的汽车零件销存管理信息系统的设计与实现

对于采用连锁经营的汽车零件销售企业来说,各经营网点分布在同一城市的不同区域或不同城市,为了在充分利用原有信息和资源的基础上处理好许多中间环节,减少人员工作量,保证企业销存状态良好,提高管理效率,设计了基于B/S模式的汽车零件销存管理信息系统的技术方案,详细讨论系统的功能设计以及实现技术。     

湿H2S环境中金属材料腐蚀的研究

介绍了在湿H2S环境中金属材料的腐蚀试验标准、方法和手段并重点强调了在H2S试验过程中常遇到的一些问题的处理方法.最后,指出了应加强H2S腐蚀的基础性和系统性研究的研究方向.     

TMS320F240串口通信特征及其应用

主要论述了TMS320F240串行外设接口模块的特点，并通过与MCS5l单片机通信，实现液晶显示。     

Analysis of the MSS51 region on chromosome XII of Saccharomyces cerevisiae.

We have localized gene MSS51 on chromosome XII of Saccharomyces cerevisiae between the RDN1 and CDC42 loci. 'Head to head' with MSS51 is another gene, QRI5, the function of which is unknown. However, the proximity of these genes, the structure of the intergenic region and the presence of an ABF1 binding site right in the middle of this region suggest that the MSS51 and QRI5 expressions are submitted to a common regulatory process.     

RE／S值对控轧低碳Mn－Nb－RE钢硫化物成分和形貌的影响

用扫描电镜测定了含０．０４１％～０．０７６％ＲＥ的低碳Ｍｎ－Ｎｂ－ＲＥ钢中硫化物的成分、大小和形貌。ＲＥ／Ｓ值为２．８～３．０时，钢中的硫化物充分变质。