基于样本紧密度的雷达高分辨距离像识别方法研究

模板库是基于高分辨距离像(HRRP)进行雷达自动目标识别的关键。由于真实目标复杂的电磁散射特性及背景杂波的存在,基于传统平均HRRP模板库的目标识别方法的实用性能有限。该文分析了雷达目标HRRP样本集在单位超球面上的空间分布特征,构建了类心+紧密度球特征模板库,定义了基于紧密度球的距离度量方法,最后提出基于样本紧密度的HRRP识别方法。基于公共MSTAR数据的实验结果表明该方法具有良好的工程实用性能。     

The influences of textural parameters of grains on the LCPC abrasivity of coarse-grained igneous rocks

Rock abrasivity causes the tool wear in rock excavation or drilling. The understanding of wear mechanism is important for the cost estimation and planning of projects. In this study, the effects of textural properties of grains such as aspect ratio, roundness, and diameter on the LCPC abrasivity coefficient (LAC) were investigated for coarse-grained igneous rocks. First, the LAC was correlated to the abrasive mineral content (AMC) and a good correlation was found between the two parameters. Then, the LAC was correlated to the AMC multiplied by the textural properties of grains, respectively. Compared to the correlation coefficient of the relation between the LAC and the AMC, the correlation coefficient was increased by including the textural properties of grains to the correlation. A combined parameter called shape and size coefficient (SSC) was defined in order to see the combined effect of the textural properties of grains on the LAC. The correlation coefficient of the relation between the LAC and the AMC multiplied by the SSC is very strong and fairly higher than that of the previous correlations derived. It can be concluded that the textural properties of loosened materials have a strong influence on the tool wear.     

.NET平台利用AspectSharp实现权限验证

通过对AOP和OOP的简单分析提出了AOP的发展前景;介绍DynamicProxy的基本原理和拦截机制以及.NET平台下AOP实现技术的研究;最后在此基础上提出利用AspectSharp实现权限验证的思路。     

AOP及其编织技术的研究

AOP（Aspect Oriented Programming）是一种新的编程技术,它为开发者提供了一种描述横切关注点的机制,并能够自动将横切关注点编织到面向对象的软件系统中,从而实现了横切关注点的模块化,通过划分方面代码,横切关注点变得容易处理。介绍了AOP框架中经常出现的概念和AO软件的开发过程,着重讨论了当前比较流行的几种编织技术并阐述了这几种编织技术各自的优缺点。     

基于DEFORM的长径比对热镦GCr15球坯质量影响的模拟研究

研究了热镦Φ45mm GCr15钢球球坯实物垂直赤道截面的纤维组织流线特征,利用三维有限元软件DEFORM-3D模拟金属流动方向,两者吻合较好.进一步模拟了长径比在1.63-2.59范围变化时,不同的圆棒料尺寸对球坯质量的影响.结果表明,长径比为1.78时获得的球坯质量最佳.     

The aspect ratio of surface grooves and metastable pitting of stainless steel

The metastable pitting behavior of 316L stainless steel with different surface roughness in 0.01 M NaCl solution was studied using potentiostatic and potentiodynamic polarization methods and statistical treatments. As surface roughness decreased, the nucleation rate of metastable pits decreased. The peak current of metastable pits also decreased, but the average growth rate of metastable pits showed a slight increase. The aspect ratio of surface groove, w/d, was suggested to characterize the openness of surface grooves, in which w is the width of the groove at the opening and d the depth of the groove. Bigger w/d value indicates more smooth surface, and it is more difficult for micro-pit to nucleate. Under certain conditions of solution and potential, there is a critical w/d value. Metastable pits may nucleate only on those surfaces whose w/d values are less than the critical value. As the aspect ratio w/d increases, the nucleation rate of metastable pits decreases linearly, and both metastable pitting potential E_m and pitting potential E_p move in the positive direction.     

Plastic constraint of large aspect ratio solder joints

The aspect ratio (joint area/joint thickness) of thin (0.001-0.006 in.) surface mount solder (60S-40Pb) joints plays an important role in determining the mechanical properties and fracture behavior of the joints. This study demon-strates that plastic constraint of a large aspect ratio 60Sn-40Pb solder joint can develop triaxial (hydrostatic) stresses several times greater than the average tensile strength of the bulk solder material. A four to sixfold increase in average joint stress and up to a tenfold increase in peak stress was measured on joints with aspect ratios ranging from 400 to 1000. Although a direct relationship of the aspect ratio to the average tensile stress is shown, as the Friction Hill model predicts, the observed stress increase is not nearly as high but proportional to the classical prediction. This is attributed to the existence of internal defects (oxide particles and micro-voids) and transverse grain boundaries which fail producing internal free surfaces. Thus, the actual aspect ratio is thickness/d², where d equals the distance between internal surfaces. The fracture of these constrained joints was brittle, with the separation occurring between a tin-rich copper tin intermetallic at the interface and the solder matrix. Voids within the solder joint are shown to relieve the plastic constraint and lower the average tensile stress of the joint. The Friction Hill model may play an important role in explaining the small percentage of atypical solder joint failures which sometimes occur on electronic assemblies. In particular, the sudden failure of a thin joint in a strain controlled environment may be attributed to the development of a large hydrostatic stress component. Therefore, a flaw free, plastically constrained joint which develops a high stress state will be a high risk candidate for failure.     

Study of inductively coupled Cl2/BCl3 plasma process for high etch rate selective etching of via-holes in GaAs

We have investigated the selective etching of 50 μm diameter via-holes for etch depth >200 μm using 30 μm thick photo resist mask in Inductively Coupled Plasma system with Cl₂/BCl₃ chemistry. Resultant etch rate/etch profiles are studied as a function of ICP process parameters and photo resist mask sidewall profile. Etch yield and aspect ratio variation with process pressure and substrate bias is also investigated at constant ICP power. The etch yield of ICP process increased with pressure due to reactant limited etch mechanism and reached a maximum of ∼19 for 200 μm depth at 50 mTorr pressure, 950 W coil power, 80 W substrate bias with an etch rate ∼4.9 μm/min. Final aspect ratio of etched holes is increased with pressure from 1.02 at 20 mTorr to 1.38 at 40 mTorr respectively for fixed etch time and then decreased to 1.24 at 50 mTorr pressure. The resultant final etch profile and undercut is found to have a strong dependence on the initial slope of photo resist mask sidewall angle and its selectivity in the pressure range of 20-50mTorr.     

Dislocation multiplication inside contact holes

Ion implantation into contact holes has been widely used to dope the specific contact area and to reduce the contact resistance. In this study, mask edge defects were observed at the edge area of small contact holes with high aspect ratio, which resulted in multiplied dislocations penetrating into Si substrate for more than 0.3 μm after back-end processings. Those dislocations were identified to be Schockley partial dislocations and stair rod dislocations lying on 4 sets of inclined {111}Si planes.