Dielectrophoresis‐Assisted Integration of 1024 Carbon Nanotube Sensors into a CMOS Microsystem

Carbon‐nanotube (CNT)‐based sensors offer the potential to detect single‐molecule events and picomolar analyte concentrations. An important step toward applications of such nanosensors is their integration in large arrays. The availability of large arrays would enable multiplexed and parallel sensing, and the simultaneously obtained sensor signals would facilitate statistical analysis. A reliable method to fabricate an array of 1024 CNT‐based sensors on a fully processed complementary‐metal‐oxide‐semiconductor microsystem is presented. A high‐yield process for the deposition of CNTs from a suspension by means of liquid‐coupled floating‐electrode dielectrophoresis (DEP), which yielded 80% of the sensor devices featuring between one and five CNTs, is developed. The mechanism of floating‐electrode DEP on full arrays and individual devices to understand its self‐limiting behavior is studied. The resistance distributions across the array of CNT devices with respect to different DEP parameters are characterized. The CNT devices are then operated as liquid‐gated CNT field‐effect‐transistors (LG‐CNTFET) in liquid environment. Current dependency to the gate voltage of up to two orders of magnitude is recorded. Finally, the sensors are validated by studying the pH dependency of the LG‐CNTFET conductance and it is demonstrated that 73% of the CNT sensors of a given microsystem show a resistance decrease upon increasing the pH value.     

CMOS器件p、γ、β辐照损伤等效剂量分析计算

建立了CMOS电子元器件中质子、电子和光子辐照损伤 (电子 空穴对和离位原子浓度 )计算模型。利用微机化的电子 光子簇射过程模拟程序EGS4和TRIM程序分别计算了电子 ( β)、光子 (γ)和质子 ( p)辐照在CMOS器件各层中产生的电子 空穴对和离位原子浓度。计算结果表明 ,在CMOS器件桥结绝缘层中 ,电子产生的电子 空穴对和离位原子浓度最高 ,光子次之 ,质子最低 ,这表明电子辐照损伤最高 ,光子次之 ,质子最小。     

新型基于源极跟随器的零极点型滤波器

提出一种新型基于源极跟随器的零极点型滤波器。提出的单支路全差分的双二阶单元采用两个前馈电容综合复数零点,用于实现连续时间零极点型滤波器。源极跟随器在电压域直接处理信号使得该双二阶单元以低功耗实现高线性度。利用CMOS0.18μm工艺级联实现了一个4阶切比雪夫Ⅱ型全差分低通滤波器。测试结果表明,滤波器带宽为2.75MHz,实现了带外下陷特性。在2V电源电压下,消耗电流为1.5mA,测得带内IIP3为5dBm。在三次谐波失真(HD3)为-46.3dB条件下滤波器的动态范围为65dB。     

A New Inductor Series-Peaking Technique for Bandwidth Enhancement of CMOS Current-Mode Circuits

This paper introduces a new inductor series-peaking technique for bandwidth enhancement of low-voltage CMOS current-mode circuits. The peaking inductor is in series with the capacitor constituting the dominant pole. It boosts the bandwidth by utilizing the resonance characteristics of LC networks. To reduce the value of the peaking inductor, a new negative current-current feedback mechanism is proposed. The employment of both inductive peaking and current feedback further increases the bandwidth. Both the inductor series-peaking and the current-current feedback do not affect the supply voltage and DC biasing conditions. Theoretical analysis and simulation results show that a significant bandwidth enhancement is achieved.     

应用于超薄栅氧化CMOS器件的两种电荷泵改进技术的比较

本文提出了High-low multi-frequency(HLMF)和Average bottom-top-pulse(ABTP)两种电荷泵改进技术,用于提高表征超薄栅氧化CMOS器件界面缺陷的精度.结果表明,在电荷泵技术测量过程中,这两种改进技术能非常有效地扣除漏电流.同时,也分析了电荷泵电流曲线的几个典型特性.由于ABTP技术是用静态模式测量漏电流,所以,在大的负Vbase端,电荷泵电流曲线的尾部出现大的波动.通过比较,我们发现HLMF具有更高的精度,可以作为用于提升表征超薄栅氧化CMOS器件界面缺陷精度的一种重要技术.     

变压器铁芯接地电流在线监测系统设计及其带电检测不确定度评定

摘要：在保持变压器铁芯接地电流在线监测系统硬件设施保持不变的前提下,研究一种该系统的算法升级策略。使用30个周期数据形成的多测点多列交叉神经网络支持的机器学习系统对该系统的接地电流进行测量,同时研究一种基于6倍标准误差率的检测不确定度标识方法,研究该系统算法升级策略的同时,分析不确定度的标识方法。技术革新后的变压器铁芯接地电流监测误差,小于±0.395%,可以基本满足对变压器铁芯接地电流的测量需求。且该算法可以排除实际测量中因为变压器内部、外部复合故障导致的接地电流产生机理差异性影响。同时,重点研究了对铁芯接地电流误差测量中的扩展不确定度测量方法确认问题,认为6倍标准偏差率作为扩展不确定度测量标度,可以满足该系统的测量误差标定需求。     

脉冲电流对Al-Cu-Mg合金凝固过程中热裂纹的影响

通过施加脉冲电流,采用自行设计的低频中压脉冲电源研究了脉冲电流对Al-Cu-Mg合金凝固过程中热裂纹的影响。结果表明,脉冲电流可以有效抑制热裂纹的产生与扩展,在脉冲频率0~400 Hz范围内,随着脉冲频率的增加,裂纹体积在下降,在400 Hz的时候,裂纹体积最小达到43.18 mm~3,但继续增加脉冲电流频率,裂纹体积在增加。     

基于电流模式的三电源切换电路研究

本文提出了一种基于电流模式的市电、直流与蓄电池三电源切换电路的设计。实测结果表明该电路可按供电优先级灵活地进行电源切换,并且响应灵敏,工作可靠。     

优化现代太阳能装置

文章介绍了太阳能逆变器以及逆变器输出电流的直流偏移电流测量。     

High speed SOI CMOS image sensor with pinned photodiode on handle wafer

We have fabricated SOI CMOS active pixel image sensor with pinned photodiode on handle wafer. The structure of one pixel is a four-transistor type active pixel image sensor, which consists of a reset and a source follower transistor on seed wafer, and is comprised of a photodiode, a transfer gate, and a floating diffusion on handle wafer. The photodiode could be optimized for better quantum efficiency and low dark currents because the process of a photodiode on handle wafer is independent of that of transistors on seed wafer. Most of the wavelengths are absorbed within the visible range, because the optimized photodiode is located on the handle wafer. The response time of SOI CMOS active pixel sensor was about 2 times faster than that of bulk CMOS active pixel image sensor.