VLSI Implementation of Forward Error Control Technique for ATM Networks

In asynchronous transfer mode (ATM) networks, fixed length cells of 53 bytes are transmitted. A cell may be discarded during transmission due to buffer overflow or a detection of errors. Cell discarding seriously degrades transmission quality. The quality degradation can be reduced by employing efficient forward error control (FEC) to recover discarded cells. In this paper, we present the design and implementation of decoding equipment for FEC in ATM networks based on a single parity check (SPC) product code using very‐large‐scale integration (VLSI) technology. FEC allows the destination to reconstruct missing data cells by using redundant parity cells that the source adds to each block of data cells. The functionality of the design has been tested using the Model Sim 5.7cXE Simulation Package. The design has been implemented for a 5 ° 5 matrix of data cells in a Virtex‐E XCV 3200E FG1156 device. The simulation and synthesis results show that the decoding function can be completed in 81 clock cycles with an optimum clock of 56.8 MHz. A test bench was written to study the performance of the decoder, and the results are presented.     

Optimal algorithms for adjacent side routing

We consider the switchbox routing problem of two-terminal nets in the case when all thek nets lie on two adjacent sides of the rectangle. Our routing model is the standard two-layer model. We develop an optimal algorithm that routes all the nets whenever a routing exists. The routing obtained uses the fewest possible number of vias. A more general version of this problem (adjacent staircase) is also optimally solved.This research was supported in part by NSA Contract No. MDA-904-85H-0015, NSF Grant No. DCR-86-00378, and by NSF Engineering Research Centers Program NSFD CDR 88003012.     

A VLSI architecture for a half-edge-based corner detector

Corner detection is a low-level feature detection operator that is of great use in image processing applications, for example, optical flow and structure from motion by image correspondence. The detection of corners is a computationally intensive operation. Past implementations of corner detection techniques have been restricted to software. In this paper we propose an efficient very large-scale integration (VLSI) architecture for detection of corners in images. The corner detection technique is based on the half-edge concept and the first directional derivative of Gaussian. Apart from the location of the corner points, the algorithm also computes the corner orientation and the corner angle and outputs the edge map of the image. The symmetrical properties of the masks are utilized to reduce the number of convolutions effectively, from eight to two. Therefore, the number of multiplications required per pixel is reduced from 1800 to 392. Thus, the proposed architecture yields a speed-up factor of 4.6 over conventional convolution architectures. The architecture uses the principles of pipelining and parallelism and can be implemented in VLSI.     

Grouped Approach for the Design of H.264/AVC Motion Estimation Architectures

This letter presents a novel approach for organizing computational resources into groups within H.264/AVC motion estimation architectures, leading to reductions of up to 75% in the equivalent gate count with respect to state‐of‐the‐art designs.     

0.25μm CMOS千兆以太网发送器设计

分析了千兆以太网体系结构,给出了符合IEEE 802.3z标准中1000BASE-X规范的发送器电路结构,并采用TSMC 0.25 μm CMOS 混合信号工艺设计了符合该规范的高速复接电路和锁相环时钟倍频电路.芯片核心电路面积分别为(0.3×0.26)mm2和(0.22×0.12)mm2.工作电压2.5 V时,芯片核心电路功耗分别为120 mW和100 mW.时钟倍频电路的10倍频输出时钟信号频率为1.25 GHz,其偏离中心频率1MHz处的单边带相位噪声仅为-109.7 dBc/Hz.在驱动50 Ω输出负载的条件下,1.25 Gbit/s的高速输出数据信号摆幅可达到410 mV.     

一种高精度的CMOS带隙基准电压源

设计了一种采用0.25 μm CMOS工艺的高精度带隙基准电压源.该电路结构新颖,性能优异,其温度系数可达3×10-6/℃,电源抑制比可达75 dB.还增加了提高电源抑制比电路、启动电路和省功耗电路,以保证电路工作点正常、性能优良,并使电路的静态功耗较小.     

320×240 Pixels CMOS Digital Image Sensor with Wide Dynamic Range

A 320×240 CMOS image sensor is demonstrated,which is implemented by a standard 0.6 μm 2P2M CMOS process.For reducing the chip area,each 2×2-pixel block shares a sample/hold circuit,analog-to-digital converter and 1-b memory.The 2×2 pixel pitch has an area of 40 μm×40 μm and the fill factor is about 16%.While operating at a low frame rate,the sensor dissipates a very low power by power-management circuit making pixel-level comparators in an idle state.A digital correlated double sampling,which eliminates fixed pattern noise,improves SNR of the sensor, and multiple sampling operations make the sensor have a wide dynamic range.     

深亚微米条件下的多层VLSI／MCM层分配的遗传算法

本文提出了一个深亚微米条件下的多层ＶＬＳＭＣＭ有约束分层层分配的遗传算法。该算法分为两步：首先进行超层分配，使各线网满足Ｃｒｏｓｓｔａｌｋ约束，且超层数目最少；然后进行各超层的通孔最少化二分层。与目前的层分配算法相比，该遗传算法具有目标全面，全局优化能力强等特点，是一种可应用于深亚微米条件下的ＩＣ ＣＡＤ的有效分层方法。     

Motion Perception Using Analog VLSI

Motion perception is arguably a fundamental mechanism used by natural species to accomplish a number of tasks, such as navigating freely in an unknown environment. Traditional motion perception methods tend to be computationally intensive, requiring powerful computers and large memories. However, by copying biological mechanisms, such as elementary motion discrimination at the early stages of the visual processing paths, it should be possible to build small and efficient motion perception systems. This paper describes the manner in which a simple motion perception model based on the insect visual system has been implemented using mixed analog/digital VLSI. The device has been fabricated in a 2 micron double metal, double polysilicon process, and comprises 61 photo-detectors, and associated analog and digital circuitry. While not entirely successful in that component mismatches hamper the detection of dark-to-bright changes in contrast, the results clearly show the feasibility of using such a device in autonomous control systems.     

STI process steps for sub-quarter micron CMOS

This paper presents Shallow Trench Isolation (STI) process steps for sub-1/4 μ CMOS technologies. Dummy active areas, vertical trench sidewalls, excellent gap filling, counter mask etch step and CMP end point detection, have been used for a 0.18 μm CMOS technology. Electrical results obtained with a 5.5 nm gate oxide thickness show good isolation down to 0.3 μm spacing. Good transistor performances have been demonstrated.