基于FPGA硬件的单粒子翻转模拟技术

由于航空航天活动越发复杂,深空通信和姿态控制等航空航天电子系统大量采用集成电路芯片以提高各方面性能。随着集成电路工艺节点的进一步缩小,电路受到单粒子效应而发生错误的概率越来越大。评估集成电路对单粒子翻转（Single event upset, SEU）的敏感性对航空航天的发展具有重要意义。电路规模的增加和系统功能集成度的提高给评估速度带来了严峻挑战。本文提出了一种能适用于超大规模集成电路（Very large scale integration, VLSI）的快速故障注入方法。该方法可通过脚本自动分析电路,并修改逻辑使电路具备故障注入功能。实验结果表明,该方法实现的故障注入速度可以达到纳秒级,可大幅缓解电路规模和评估时间之间的矛盾,从而满足VLSI的评估需求。     

一种高压摆率低电压CMOS AB类放大器的设计

为了增加单位增益频率与压摆率,并能够工作在低电源电压下,同时降低偏置电流,提出了一种改进的基于0.18μm CMOS工艺的AB类放大器,其采用多级放大器结构,第一级为具有电流镜负载的NMOS差分对,第二反相级由共源放大器实现,第三极为AB类放大器,其能够在±500 m V电源下工作.电路仿真结果显示该放大器相位裕度为87°;总补偿电容为5 p F,与传统放大器相比减少了50%;单位增益频率为21.17 MHz,比传统放大器增大约10倍;压摆率为7.5和8.57 V/μs,与传统电路相比,分别增加了2.8倍和2.6倍.此外,与其他文献相比,该放大器具有较大的单位增益带宽和压摆率以及较小的功耗.     

双目视差测距望远光学系统设计

双目视差测距望远镜主要应用于对动态目标的测量,特别是飞机飞行距离的测量。双目视差测距望远系统,不对外发射信号,属于被动式测距仪,因此具有被动接收式和非接触式的特点,可测量500~5000m大范围距离。主要探讨了双目视差望远系统的主要光学原理,并利用Zemax光学设计软件对双目视差望远光学系统进行设计与优化,并对本光学系统进行了误差分析。使用CMOS自动调焦技术,提高了双目望远镜的成像质量。双目视差测距望远系统的测距理论误差在0.91%以下,满足测距理论误差小于1%的要求。     

VLSI布局算法分析

布局是VLSI物理设计阶段的关键步骤,用于确定模块在芯片上的位置,随着电路设计复杂度不断提高,高效的自动布局算法变得愈发重要。对布局问题进行了描述,总结了布局算法中常用的线长模型,分析了传统的3类布局算法及可布线性驱动的布局算法,并给出了布局算法的未来发展趋势。     

基于六边形AMC结构的60 GHz片上天线的设计

介绍一种基于六边形人工磁导体结构采用标准CMOS工艺的60 GHz片上天线的设计。标准CMOS工艺以金属硅为衬底,但衬底硅的低电阻率(10Ω·cm)和低的电子迁移率特性对天线辐射有较大影响。AMC结构通过合理的设计具有类似于理想磁壁的同相位反射特性。通过在天线与硅衬底之间周期加载AMC结构,可以有效地提高天线的增益、辐射效率等。重点讨论了采用人工磁导体结构的天线优化设计,并基于三维电磁仿真软件Ansoft HFSS仿真比较了不同排列的人工磁导体结构对天线性能的影响。     

Probabilistic Bit Stream Neural Chip: Theory

A design for a neural network chip is proposed using probabilistic bit streams to represent real values. This paper analyzes the performance of the proposed neurons in this design and demonstrates that very simple operations can be used to obtain the desired functionality. It is also shown that a suitable ‘activation function’ for neurons of this type can be obtained using the interaction of two probability distributions. Finally, the paper introduces a variant of the back-propagation learning algorithm which involves computing the derivatives of the output with respect to individual weights in a network of such units.     

Difference in electron- and gamma-irradiation effects on output characteristic of color CMOS digital image sensors

Changes of the average brightness and non-uniformity of dark output images, and quality of pictures captured under natural lighting for the color CMOS digital image sensors irradiated at different electron doses have been studied in comparison to those from the γ-irradiated sensors. For the electron-irradiated sensors, the non-uniformity increases obviously and a small bright region on the dark image appears at the dose of 0.4 kGy. The average brightness increases at 0.4 kGy, increases sharply at 0.5 kGy. The picture is very blurry only at 0.6 kGy, showing the sensor undergoes severe performance degradation. Electron radiation damage is much more severe than γ radiation damage for the CMOS image sensors. A possible explanation is presented in this paper,     

一种三级CMOS运算放大器

运算放大器（OPERATIONAL AMPLIFIER）是模拟电路中最重要和最通用的单元电路之一。基于0.5 umCMOS混合工艺设计了一种三级CMOS运算放大器,它具有放大倍率高,静态功耗低,适合大规模集成等特点。     

Challenges of 22 nm and beyond CMOS technology

It is predicted that CMOS technology will probably enter into 22 nm node around 2012. Scaling of CMOS logic technology from 32 to 22 nm node meets more critical issues and needs some significant changes of the technology, as well as integration of the advanced processes. This paper will review the key processing technologies which can be potentially integrated into 22 nm and beyond technology nodes, including double patterning technology with high NA water immersion lithography and EUV lithography, new devi...     

基于Single—Sequence布图规划线长约束问题的研究

布图规划是VLSI设计中非常重要的步骤。Single—Sequenc是一种非常有用的表示布图的编码方法。在实际的布图规划中,由于线长对芯片性能有较大的影响,因此为了使芯片的整体性能达到最优,考虑线长因素,使线长尽可能短。该论文提出了在用模拟退火算法寻求最优布图的同时,通过对算法加以改进,考虑线长约束条件,有效地解决了布图规划的线长约束问题。