Sm_2O_3掺杂的BaTiO_3陶瓷的PTCR效应

施主浓度与 PTCR效应的关系 ,一方面受各种杂质乃至助烧剂影响而变得复杂化 ;另一方面也被很多作者所忽视。然而 ,这一关系可以在一定程度上映射出 PTCR效应的本质。海望曾指出 ,在 Ba Ti O3材料中 ,晶界上过剩施主的堆集 ,能够形成晶界层中高浓度的表面受主态 ,从而使材料 PTCR效应迅速提高。尽管海望的表面受主态模型被广为接受 ,然而 ,我们研究了 Sm2 O3掺杂的 Ba Ti O3陶瓷中掺杂浓度与 PTCR效应的关系 ,结果表明 :随着稀土掺杂量的提高 ,材料的升阻比降低。采用其他稀土元素 ,也得到相同的结果。因此 ,PTCR效应应当来源于在铁电相变点 ,晶界层中电子陷阱中性钡缺位被激活俘获自由电子 ;过剩施主的增加只能增加材料的室温电阻率 ,而不能提高 PTCR效应     

EVALUATION OF MALTING QUALITY IN A BARLEY BREEDING PROGRAMME USE OF α-AMYLASE AND β-GLUCAN LEVLES IN MALT AS PRESELECTION TOOLS

Analysis according to the EBC protocol, immunological determination of a α-amylase and estimation of malt β-glucan using the Calcofluor-FIA method, were used to screen 327 barley breeding lines for malting quality. The results obtained with the α-amylase and β-glucan methods are highly correlated to the important malt quality paramters: extract yield and β-glucan content in the wort. It is recommended that either of the two methods, which are simple to perform are used as prescreening tools in breeding programmes for malting barley.     

数字炮控系统中旋转变压器信号转换电路的设计

将旋转变压器(旋变)的高可靠性和微处理器的快速数据处理能力相结合来实现旋变的轴角编码,并应用于数字交流全电炮控系统中提供速度和位置反馈,提高了系统的可靠性和低速性能.该文重点介绍了旋变信号的处理电路及其与DSP的硬件接口.     

氧化铈掺杂SrCoO3-δ的结构与电导性能

采用固相反应法合成了Sr1-xCexCoO3 -δ(x =0 .0 5～ 0 .2 )阴极材料 ,并研究了其结构和电导性能。XRD图谱表明SrCoO3 -δ体系中CeO2 固溶量为 10 %～ 15 % (质量分数 ) ,且随着氧化铈含量的增加体系稳定性略有降低 ,晶胞出现收缩。当氧化铈的掺杂量为 15 %时的电导率高于其它固溶量的组分 ,在 35 0～ 4 0 0℃达到最高值 ,超过了5 0 0S/cm ,满足了作为低温SOFC阴极材料的电学性能的要求。     

Al2O3基陶瓷抗弹性能的研究

以添加ZrO2的Al2O3基陶瓷材料为研究对象,经过成分优化设计以及成型、烧结工艺优化设计,制备出性能高且稳定的材料;并采用模拟穿甲弹和破甲弹对装甲钢、几种陶瓷材料进行了对比试验,测定了防护系数;并分析了几种材料抗穿、破甲弹防护系数不同的原因。     

起始粉末粒径对Al2O3-TiC陶瓷力学性能的影响

热压烧结制备了Al2O3和Al2O3-TiC复合陶瓷。研究了起始粉末粒径对Al2O3-TiC复合陶瓷力学性能的影响。试验结果表明,添加TiC显著地提高了氧化铝陶瓷的力学性能,σf和K1c分别提高了70％和90％。其中大颗粒TiC对氧化铝陶瓷的增韧尤为有利,其裂纹偏转增长了扩张路径,提高了材料的断裂抗力。     

SnO2纳米材料制备技术的研究进展

综述了SnO2纳米材料制备技术的研究进展,报道了一种制备纳米纤维的新方法——热爆形变合成法,讨论了用该方法制备纳米纤维的基本条件。采用该方法制备出了SnO2纳米纤维,并进行了SEM和XRD分析。结果表明,SnO2纤维的直径约20-100nm,其X-射线衍射谱与标准的SnO2衍射谱完全一致。与其它方法相比,热爆形变合成法具有设备简单、操作方便、生产率高、产物无团聚等优点,稍加研磨就可获得长度不同的短纤维。但是,反应过程难以控制,这是热爆形变合成法的主要缺点。     

TiB2粉末化学镀银工艺研究

采用化学镀银法制备Ag/TiB2复合粉末,系统研究NaOH,HCHO,NH.3H2O的加入量及反应时间等参数对包覆粉末质量的影响及TiB2表面改性对AgTiB2材料性能的影响。结果表明:NaOH和HCHO含量的增加可促进Ag的还原反应;pH值的大小对Ag的还原有显著的影响,pH值大可加快反应过程,使Ag的还原更加彻底;NH3.H2O在化学镀银过程中起稳定作用,随着NH3.H2O的增加,使反应液更为稳定,Ag不易发生自分解,但也导致镀银溶液中主盐的Ag不容易被还原,不能获得Ag均匀包覆的TiB2复合粉末;反应时间的延长对于反应后粉末中Ag含量的增加影响并不十分明显。采用化学镀的粉末所制备的Ag/TiB2复合材料的致密度、硬度和电导率分别提高了4.59%,12.20%和7.91%。     

Synthesis and Characterization of 2D Molybdenum Carbide (MXene)

Large scale synthesis and delamination of 2D Mo₂CT _x (where T is a surface termination group) has been achieved by selectively etching gallium from the recently discovered nanolaminated, ternary transition metal carbide Mo₂Ga₂C. Different synthesis and delamination routes result in different flake morphologies. The resistivity of free‐standing Mo₂CT _x films increases by an order of magnitude as the temperature is reduced from 300 to 10 K, suggesting semiconductor‐like behavior of this MXene, in contrast to Ti₃C₂T _x which exhibits metallic behavior. At 10 K, the magnetoresistance is positive. Additionally, changes in electronic transport are observed upon annealing of the films. When 2 μm thick films are tested as electrodes in supercapacitors, capacitances as high as 700 F cm^?3 in a 1 m sulfuric acid electrolyte and high capacity retention for at least 10,000 cycles at 10 A g^?1 are obtained. Free‐standing Mo₂CT _x films, with ≈8 wt% carbon nanotubes, perform well when tested as an electrode material for Li‐ions, especially at high rates. At 20 and 131 C cycling rates, stable reversible capacities of 250 and 76 mAh g^?1, respectively, are achieved for over 1000 cycles.     

Non‐Lithographic Fabrication of All‐2D α‐MoTe2 Dual Gate Transistors

As one of the emerging new transition‐metal dichalcogenides materials, molybdenum ditelluride (α‐MoTe₂) is attracting much attention due to its optical and electrical properties. This study fabricates all‐2D MoTe₂‐based field effect transistors (FETs) on glass, using thin hexagonal boron nitride and thin graphene in consideration of good dielectric/channel interface and source/drain contacts, respectively. Distinguished from previous works, in this study, all 2D FETs with α‐MoTe₂ nanoflakes are dual‐gated for driving higher current. Moreover, for the present 2D dual gate FET fabrications on glass, all thermal annealing and lithography processes are intentionally exempted for fully non‐lithographic method using only van der Waal's forces. The dual‐gate MoTe₂ FET displays quite a high hole and electron mobility over ≈20 cm² V^?1 s^?1 along with ON/OFF ratio of ≈10⁵ in maximum as an ambipolar FET and also demonstrates high drain current of a few tens‐to‐hundred μA at a low operation voltage. It appears promising enough to drive organic light emitting diode pixels and NOR logic functions on glass.