首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   352篇
  免费   21篇
  国内免费   8篇
电工技术   9篇
综合类   8篇
化学工业   24篇
金属工艺   97篇
机械仪表   9篇
建筑科学   60篇
矿业工程   5篇
能源动力   16篇
轻工业   7篇
石油天然气   16篇
武器工业   7篇
无线电   29篇
一般工业技术   45篇
冶金工业   9篇
原子能技术   3篇
自动化技术   37篇
  2024年   4篇
  2023年   2篇
  2022年   7篇
  2021年   14篇
  2020年   10篇
  2019年   7篇
  2018年   5篇
  2017年   12篇
  2016年   14篇
  2015年   18篇
  2014年   18篇
  2013年   21篇
  2012年   28篇
  2011年   40篇
  2010年   27篇
  2009年   37篇
  2008年   25篇
  2007年   19篇
  2006年   19篇
  2005年   14篇
  2004年   13篇
  2003年   11篇
  2002年   6篇
  2001年   7篇
  1998年   1篇
  1996年   1篇
  1992年   1篇
排序方式: 共有381条查询结果,搜索用时 15 毫秒
41.
    
Intramolecular donor–acceptor structures prepared by covalently binding conjugated octylphenanthrenyl‐imidazole moieties onto the side chains of regioregular poly(3‐hexylthiophene)s exhibit lowered bandgaps and enhanced electron transfer compared to the parent polymer, e.g., conjugation of 90 mol% octylphenanthrenyl‐imidazole moieties onto poly(3‐hexylthiophene) chains reduces the optical bandgap from 1.91 to 1.80 eV, and the electron transfer probability is at least twice as high as that of pure poly(3‐hexylthiophene) when blended with [6,6]‐phenyl‐C61‐butyric acid methyl ester. The lowered bandgap and the fast charge transfer both contribute to much higher external quantum efficiencies, thus much higher short‐circuit current densities for copolymers presenting octylphenanthrenyl‐imidazole moieties, relative to those of pure poly(3‐hexylthiophene)s. The short‐circuit current density of a device prepared from a copolymer presenting 90 mol% octylphenanthrenyl‐imidazole moieties is 13.7 mA · cm?2 which is an increase of 65% compared to the 8.3 mA · cm?2 observable for a device containing pure poly(3‐hexylthiophene). The maximum power conversion efficiency of this particular copolymer is 3.45% which suggest that such copolymers are promising polymeric photovoltaic materials.  相似文献   
42.
ICT infrastructure investments in educational institutions have been one of the key priorities of education policy during the last decade. Despite the attention, research on the effectiveness and efficiency of ICT is inconclusive. This is mainly due to small-scale research with weak identification strategies which lack a proper control group. Using the 2011 ‘Trends in International Mathematics and Science Study’ (TIMSS) data, we define by a Mahalanobis matching a control group with similar student, teacher, school and regional characteristics. The results indicate that accounting or not accounting for these characteristics, may considerably alter the estimated impact of ICT. This suggests that a correction for characteristics related to the student population, teaching staff, administrative personnel and school management is warranted in the evaluation of the impact of ICT.  相似文献   
43.
不同环境对AZ61镁合金大气腐蚀的影响   总被引:1,自引:1,他引:0  
AZ61镁合金大气腐蚀的评估不但能为材料设计提供依据,还能为实验室大气模拟腐蚀实验提供对比参数。利用XRD、SEM、EDS和XPS研究AZ61镁合金板材在万宁、西双版纳和江津三地挂片(2个月)的腐蚀速度、表面腐蚀形貌及产物构成,结果表明,AZ61镁合金板材在3种气候环境下的腐蚀速度排序为:万宁江津西双版纳,且近海大气(万宁)的腐蚀速度成倍增加,年腐蚀率达到17μm/a;AZ61合金在万宁的近海大气环境中形成的表面腐蚀层较厚且疏松,表面龟裂明显,表面腐蚀产物中有来自于含盐大气结晶的氯离子存在;AZ61合金在西双版纳大气中形成的腐蚀产物层较薄;AZ61合金在江津工业大气中的腐蚀产物层的厚度介于西双版纳和万宁之间;表面腐蚀层综合分析表明,万宁挂片中有水合碱式碳酸镁存在。  相似文献   
44.
利用金相显微镜(OM)、X射线衍射(XRD)、扫描电镜(SEM)和高温拉伸对挤压态ZM61-xSn(x=2, 4, 8 wt. %)合金的显微组织,高温力学性能和断裂机制进行了研究。结果表明添加Sn 元素可有效细化合金组织且细化效果随Sn 含量的增加而增强。挤压态ZM61-xSn(x=2, 4, 8 wt. %)合金的平均晶粒尺寸分别为11, 8和4 μm。随 Sn 含量的增加,合金的力学性能先升高后降低。 在所有的实验合金中ZM61-4Sn合金的强度最高,当在180 ℃下进行拉伸实验时,其极限抗拉强度和屈服强度分别为216和173 MPa。合金的延伸率随Sn 含量的增加而增加,当拉伸温度为300 ℃时,ZM61-xSn(x=2, 4, 8wt. %)合金的延伸率分别为183.8%, 235.8% 和258.6%。ZM61-4Sn合金具有最好的强度和塑性的结合。试样最后的断裂主要由局部缩颈引起以及试样的主要断裂机制为显微孔洞的聚集。当在260和300 ℃下拉伸时,合金发生了不完全的动态再结晶。  相似文献   
45.
时效处理AZ61铸造镁合金中孪晶的形成机理   总被引:2,自引:1,他引:1  
研究了AZ61铸造镁合金时效处理后组织中大量楔形孪晶的形成机理,并分析了时效处理对合金力学性能的影响。结果表明,时效处理前合金中存在大量的板条状亚结构和晶粒内部适当的Al的摩尔浓度梯度是导致孪晶形成的主要因素,时效处理后合金的屈服强度和抗拉强度分别由铸态的88.79MPa和189.73MPa上升至109.18MPa和250.03MPa,伸长率由6.93%上升至9.40%,合金的强度和韧性均得到改善。  相似文献   
46.
    
The effect of isochronal heat treatments for 1h on variation of damping, hardness and microstructural change of the magnesium wrought alloy AZ61 was investigated. Damping and hardness behaviour could be attributed to the evolution of precipitation process. The influence of precipitation on damping behaviour was explained in the framework of the dislocation string model of Granato and Lücke.  相似文献   
47.
         下载免费PDF全文
A two-stage strain rate deformation method is proposed to enhance the superplasticity in a hot extruded AZ61 alloy. In the stage-one of deformation, a relatively high strain rate was applied in order to obtain fine grains through dynamic recrystallization. The optimum strain rate for DRX at 300℃ was identified as -5×10-3s-1. Stage-two is conducted at relatively low strain rate in order to utilize the fine grains refined by DRX during stage-one to make the grain boundary sliding operate more smoothly, which resulting in enhanced superplastic elongation from 350% to 440%.  相似文献   
48.
为了探讨轧制温度对AZ61镁合金板材微观组织的影响,以及对电化学性能和放电性能的遗传效应,本文利用X射线衍射仪、光学显微镜和扫描电子显微镜对AZ61镁合金的微观组织结构和放电形貌进行了表征,采用极化曲线和组装镁空气电池放电方法对AZ61镁合金的电化学及放电性能进行了测试。研究表明:在300~400 ℃范围内,随着轧制温度的升高,AZ61镁合金的腐蚀电位先正移后负移再正移,腐蚀电流密度先减小后增大再减小。在350 ℃下轧制的AZ61镁合金具有最优良的耐腐蚀性能,其腐蚀电位为-1.470 V,腐蚀电流为8.415×10-6 A/cm2。在电流密度为10 mA/cm2条件下,轧制温度为350 ℃的AZ61镁合金的放电效率和比容量均达到峰值,分别为55.97%和1 253.13 mAh/g,且其放电形貌较为光滑并伴随少量凹坑。轧制温度可以有效细化合金的微观组织结构,减少β相的含量,有利于该合金耐腐蚀性的提高和放电参数的增大。  相似文献   
49.
Abstract. This article aims to bring together insights from a broad body of recent literature concerned with the nature, the measurement and policy implications of benefits and costs of transport. It is argued that, for various reasons, transport cannot be treated as an'ordinary'economic sector, and the policy implications of a number of the sector's peculiarities are addressed. Explicit attention is given to spatial aspects and network elements, internal and external benefits and costs, and efficiency aspects and equity considerations in policy making.  相似文献   
50.
    
This paper presents a Computer-aided design (CAD) model for a-IGZO thin film transistors (TFTs) by adapting SPICE level-61 RPI a-Si: H (Hydrogenated Amorphous Silicon) TFT model and level-62 RPI Poly-Si (Poly Silicon) TFT model. This work provides a complete understanding of SPICE level-61 and 62 model parameters, which must be tuned for a-IGZO TFT simulation. The adapted SPICE models of level-61 and level-62 could model all regions of operation of the TFT, that is, above-threshold and below-threshold regions. Adapted RPI poly-Si model also shows the kink effect in ZnO thin film transistors (TFTs) due to the recombination of electron–hole pairs in the channel via boundary trap states present in the poly-Si TFTs thereby increasing the drain current in the transistors above pinch-off region. The extracted performance parameters of the adapted models were found to be contiguous with experimental results. The maximum deviation in the subthreshold slope is approximately 5 mV/decade for level-61 a-Si TFT, and for level-62 poly-Si TFT, deviation in the subthreshold slope is even less, that is, 0.2 mV/decade. The experimental and simulated characteristics, extracted on-to-off ratio, negative bias reverse saturation current, and threshold voltage were almost similar. However, an average deviation of 2.4% and 2.27% was observed in the output characteristics of the adapted level-61 and level-62 models, respectively.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号