PARASITIC TOLERANT DIFFERENTIAL SC TRANSCONDUCTANCE USING UNITY GAIN BUFFERS

The unity gain buffer will be good to design high frequency SCF if its resistiveeffects can be eliminated,and therefore the whole parasitic sensitivities will greatly be reduced.On the basis of this concept,a novel parasitic tolerant SC DTE(differential transconductanceelement)is proposed.SC floating inductor and integrator fit for high frequency applications areformed by the DTE.The computer simulation and experiment on a third order elliptic LP filterverify its validity.     

Diffusion and influence of Cu on properties of CdTe thin films and CdTe/CdS cells

The effective diffusion coefficients of Cu for thermal and photodiffusion in the CdTe films have been estimated from resistivity versus duration of thermal or photoannealing curves. In the temperature range 60–200°C the effective coefficient of thermal diffusion (D_t) and photodiffusion (D_ph) are described as D_t=7.3×10⁻⁷exp(−0.33/kT) and D_ph=4.7×10⁻⁸exp(−0.20/kT).It is found that the diffusion doping of CdTe thin films by Cu at 400°C results in a sharp decrease of resistivity up to 7 orders of magnitude of p-type material, depending on thickness of Cu film. The comparative study of performance of CdTe(Cu)/CdS and CdTe/CdS cells has been studied. It is shown that the diffusion doping of CdTe film by Cu increases efficiency of CdTe(Cu)/CdS cells from 0.9% to 6.8%. The degradation of photovoltaic parameters of CdTe(Cu)/CdS cell, during testing under forward and reverse bias at room temperature, proceeds at a larger rate than those of CdTe/CdS cell without Cu. The degradation of performance of CdTe(Cu)/CdS cells is tentatively assigned to electrodiffusion of Cu in CdTe, resulting in redistribution of concentration of Cu-related centers in CdTe film and heterojunction region.     

CdTe-CdS solar cells — Production in a new baseline and investigation of material properties

In this paper, we describe our new baseline for CSS-CdTe-CdS solar cells on 10 × 10 cm² substrates. The deposition of the p-n junction and all the following steps were performed at the Institut für Festkörperphysik (IFK) in Jena. Using the new baseline, we are already able to produce solar cells with similar properties as commercial ones. In the batch type process, all manufacturing steps can be investigated separately. We employ Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and external quantum efficiency (EQE) measurements to characterise the structure of the bulk materials and interfaces. It is demonstrated that by RBS the front contact becomes accessible for thinned CdTe films. At the back contact, RBS spectra show a tellurium accumulation which is due to etching. This tellurium rich layer is confirmed by XRD with Rietveld refinement. The intermixing at the CdS-CdTe interface caused by the activation step is quantified by a bandgap determination based on EQE measurements. From the bandgap energy of the CdTe_1 − xS_x compound, we calculated the sulphur fraction x at the interface. XRD measurements imply that the activation step induces a (111) texture in CdTe. With regard to an improved manufacturing process, our cells are compared to industrial cells produced by Antec Solar Energy.     

Monitoring of CdTe atomic layer epitaxy using in-situ spectroscopic ellipsometry

Atomic layer epitaxy or ALE has proven to be useful for the growth of epitaxial layers of high uniformity, good quality, and well-controlled thickness. In this study, we have carried out in-situ monitoring during the atmospheric pressure ALE of CdTe on GaAs (100) substrates using spectroscopic ellipsometry (SE). The susceptor temperature, reactant partial pressures, as well as the flow and flush duration for each precursor are crucial process variables for ALE growth. Growth was carried out for 20–25 cycles under different sets of these process conditions during the experiment and in-situ SE was used to verify the presence of layer-by-layer growth, which enabled the quick determination of the process window. We observed ALE growth of CdTe at 300°C, supporting the explanation that the growth of CdTe occurs via a surface catalyzed decomposition of the Te precursor di-isopropyltelluride (DIPTe). Investigation of ALE mode growth behavior for different susceptor temperatures and DIPTe flush times indicated that the growth was limited by competition between desorption and reaction of the adsorbed DIPTe species on the Cd terminated surface.     

Germanium islands embedded in strained silicon quantum wells grown on patterned substrates

Germanium islands were embedded in strained silicon quantum wells in order to provide an improved electron confinement in vicinity of the islands. Growth was performed on relaxed SiGe layers. Patterned substrates were used, favouring lattice relaxation as well permitting the fabrication of small Ge islands at deposition temperatures above 500 °C. Photoluminescence analysis reveals a strongly reduced dislocation related signal. The low temperature spectra are dominated by intense signals from the germanium islands. The origin of these signals were investigated by removing the islands by etching, analysing reference samples without a silicon quantum well, varying the germanium deposition and the growth temperature.     

Efficient Reflectance and Visibility Approximations for Environment Map Rendering

We present a technique for approximating isotropic BRDFs and precomputed self-occlusion that enables accurate and efficient prefiltered environment map rendering. Our approach uses a nonlinear approximation of the BRDF as a weighted sum of isotropic Gaussian functions. Our representation requires a minimal amount of storage, can accurately represent BRDFs of arbitrary sharpness, and is above all, efficient to render. We precompute visibility due to self-occlusion and store a low-frequency approximation suitable for glossy reflections. We demonstrate our method by fitting our representation to measured BRDF data, yielding high visual quality at real-time frame rates.     

高速连续数据记录系统中双页缓存的设计和实现

在高速连续数据记录系统中，存储设备需要速度匹配单元来实现高速连续数据记录，文章讨论了双页缓存在高速连续记录系统中的作用，并以实际开发的记录系统为例，详细介绍了双页缓存的设计和实现。     

Accurate Depth of Field Simulation in Real Time

We present a new post processing method of simulating depth of field based on accurate calculations of circles of confusion. Compared to previous work, our method derives actual scene depth information directly from the existing depth buffer, requires no specialized rendering passes, and allows easy integration into existing rendering applications. Our implementation uses an adaptive, two‐pass filter, producing a high quality depth of field effect that can be executed entirely on the GPU, taking advantage of the parallelism of modern graphics cards and permitting real time performance when applied to large numbers of pixels.     

Binary rewriting and call interception for efficient runtime protection against buffer overflows

Buffer overflow vulnerabilities are one of the most commonly and widely exploited security vulnerabilities in programs. Most existing solutions for avoiding buffer overflows are either inadequate, inefficient or incompatible with existing code. In this paper, we present a novel approach for transparent and efficient runtime protection against buffer overflows. The approach is implemented by two tools: Type Information Extractor and Depositor (TIED) and LibsafePlus. TIED is first used on a binary executable or shared library file to extract type information from the debugging information inserted in the file by the compiler and reinsert it in the file as a data structure available at runtime. LibsafePlus is a shared library that is preloaded when the program is run. LibsafePlus intercepts unsafe C library calls such as strcpy and uses the type information made available by TIED at runtime to determine whether it would be ‘safe’ to carry out the operation. With our simple design we are able to protect most applications with a performance overhead of less than 10%. Copyright © 2006 John Wiley & Sons, Ltd.     

鲁棒性项目调度中缓冲设置方法

研究应对不确定因素的鲁棒性项目调度, 针对其所用时间缓冲区技术中的两种重要方法——集中缓冲和STC (starting time criticality) 分散缓冲, 采用仿真模拟实验, 以项目管理库中的帕特森例1 为对象, 进行详细的比较研究. 研究结果表明, 分散缓冲法具有更好的解鲁棒性; 当活动时间的不确定性程度较大时, 集中缓冲法的质量鲁棒性较好; 当项目工期较紧时, 分散缓冲法具有更好的鲁棒性. 这些研究结论为管理者在特定的项目环境下选择合适的缓冲方法提供了决策依据.