Overcoming the poor short wavelength spectral response of CdS/CdTe photovoltaic modules via luminescence down‐shifting: ray‐tracing simulations

The short‐wavelength response of cadmium sulfide/cadmium telluride (CdS/CdTe) photovoltaic (PV) modules can be improved by the application of a luminescent down‐shifting (LDS) layer to the PV module. The LDS layer contains a mixture of fluorescent organic dyes that are able to absorb short‐wavelength light of λ < 540 nm, for which the PV module exhibited low external quantum efficiency (EQE), and re‐emit it at a longer wavelength (λ > 540 nm), where the solar cell EQE is high. Ray‐tracing simulations indicate that a mixed LDS layer containing three dyes could lead to an increase in the short‐circuit current density from J_sc = 19.8 mA/cm² to J_sc = 22.9 mA/cm² for a CdS/CdTe PV module. This corresponds to an increase in conversion efficiency from 9.6% to 11.2%. This indicates that a relative increase in the performance of a production CdS/CdTe PV module of nearly 17% can be expected via the application of LDS layers, possibly without any making any alterations to the solar cell itself. Copyright © 2006 John Wiley & Sons, Ltd.     

Role of dual SiOx: H based buffer at the p/i interface on the performance of single junction microcrystalline solar cells

In p-i-n structure a-Si solar cell a buffer layer with proper characteristics plays important role in improving the p/i interface of the cell, reducing mismatch of band gaps and number of recombination centres. However for p-i-n structure microcrystalline ( µc-Si: H) cell which has much less light induced degradation than a-Si:H cell, not much work has been done on development of proper buffer layer and its application to µc-Si:H cell. In this paper we have reported the development of two intrinsic oxide based microcrystalline layer having different characteristics for use as buffer layers at the p/i interface of µc-Si:H cell. Previously SiO_x:H buffer layer has been used at the p/i interface which showed positive effects. To explore the possibility of improving the performance of p-i-n structure µc-Si:H cell further we have thought it interesting to use two buffer layers with different characteristics at the p/i interface. The two buffer layers have been characterized in detail and applied at the p/i interface of the µc-Si:H cell with positive effects on all the PV parameters mainly improves the open circuit voltage (V_oc) and enhances short circuit current (I_sc). The maximum initial efficiency obtained is 8.97% with dual buffer which is 6.7% higher than that obtained by using conventional single buffer layer at the p/i interface. Stabilized efficiency of the cell with dual buffer is found to be ~9.5% higher than that with single buffer after 600 h of light soakings.     

Adaptive ABR congestion control with active buffer control

ATM Forum has defined that the ABR service is designed mainly for data traffic. The design of a simple and efficient congestion control scheme is a problem that network managers have to face. In this paper, we propose a control scheme for ABR service for better scalability and response. The scheme uses both the load level and an increase in queue length to detect the presence of congestion. Continuous control functions are designed for the bandwidth allocation. A better buffer control is achieved by incorporating the percentage of buffer occupancy into the control function. All of the control functions are designed in such a way that they are sensitive to the change of the system states when they are far from the optimal level to get a fast response, but insensitive and change slowly when the states are close to the optimal level to keep the system around the steady state. Our simulation results show that the algorithm is fair to all the connections and it converges fast when the network's condition changes. Copyright © 2001 John Wiley & Sons, Ltd.     

Thermal buffer materials for enhancement of device performance of organic light emitting diodes fabricated by laser imaging process

Laser Induced Thermal Imaging (LITI) is a laser addressed thermal patterning technology with unique advantages such as an excellent uniformity of transfer film thickness, a capability of multilayer stack transfer and a possibility to fabricate high resolution as well as large-area display. Nevertheless, it has been an obstacle to use such a laser imaging process as a commercial technology so far because of serious deterioration of the device performances plausibly due to a re-orientation of the molecular stacking especially in the emitting layer during thermal transfer process. To improve device performances, we devised a new concept to suppress the thermal degradation during such kind of thermal imaging process by using a high molecular weight small molecular species with large steric hindrance as well as high thermostability as a thermal buffer layer to realize highly efficient LITI devices. As a result, we obtained very high relative efficiency (by EQE) up to 91.5% at 1000 cd/m² from the LITI devices when we utilize 10-(naphthalene-2-yl)-3-(phenanthren-9-yl)spiro[benzo[ij]tetraphene-7,9′-fluorene] as a thermal buffer material.     

一种新型快速精确定位的供弹机研究

为实现火炮供弹机设计中速度和精度两大目标之间的平衡,提出了一种基于液压缓冲器阻尼、电机能耗制动协同减速及机械限位定位的供弹机设计方案,该方案采用基于电流环和两级速度环控制电路的普通直流电机驱动方式,有效地克服了现有火炮供弹机方案中采用伺服控制技术带来的驱动器电路复杂、成本高和可靠性差等缺点。试验验证了基于该方案的供弹机运动速度快、定位精度高且工作性能稳定。这种采用电气控制和液压缓冲器相结合的组合定位方式,可为其他火炮同类问题解决提供新的思路和参考。     

基于.net的频带传输系统设计与实现

针对频带传输存在概念抽象、知识点深等教学问题,设计了一款基于Visual Studio.net的频带传输系统,该系统采用结构化与面向对象相结合的方法进行开发,内容包含ASK、FSK、PSK的调制与解调技术.本文介绍了该系统的功能模块分析与设计,并对各种关键技术予以重点介绍.经测试,系统界面友好、交互性强,能够有效的降低课程学习的难度.     

垃圾桶算法模型的理论分析

本文在理论上给出了垃圾桶算法的数学模型,该模型能够从任意给定的系统参数设置,推导出垃圾桶系统的各个参数,并具有计算简单的特点.本文通过将理论计算与仿真结果的比较,验证了本文所提出的模型确实是一个具有良好计算精度的实用化模型.为了建立垃圾桶算法的数学模型,本文研究了早期随机丢弃RED(Random early discard)系统的平均丢失率与平均队长的相互关系的理论问题,有效的解决了从平均丢弃率估计RED平均瞬时队长的问题.     

Improved morphology and crystalline quality of MBE CdZnTe/Si

We report on continuing efforts to develop a reproducible process for molecular beam epitaxy of CdZnTe on three-inch, (211) Si wafers. Through a systematic study of growth parameters, we have significantly improved the crystalline quality and have reduced the density of typical surface defects. Lower substrate growth temperatures (∼250–280°C) and higher CdZnTe growth rates improved the surface morphology of the epilayers by reducing the density of triangular surface defects. Cyclic thermal annealing was found to reduce the dislocation density. Epilayers were characterized using Nomarski microscopy, scanning electron microscopy, x-ray diffraction, defect-decoration etching, and by their use as substrates for HgCdTe epitaxy.     

Annealing effects on physical properties of doped CdTe thin films for photovoltaic applications

Polycrystalline Cadmium Telluride (CdTe) thin films were prepared on glass substrates by thermal evaporation at the chamber ambient temperature and then annealed for an hour in vacuum ~1×10⁻⁵ mbar at 400 °C. These annealed thin films were doped with copper (Cu) via ion exchange by immersing these films in Cu (NO₃)₂ solution (1 g/1000 ml) for 20 min. Further these films were again annealed at different temperatures for better diffusion of dopant species. The physical properties of an as doped sample and samples annealed at different temperatures after doping were determined by using energy dispersive x-ray analysis (EDX), x-ray diffraction (XRD), Raman spectroscopy, transmission spectra analysis, photoconductivity response and hot probe for conductivity type. The optical band gap of these thermally evaporated Cu doped CdTe thin films was determined from the transmission spectra and was found to be in the range 1.42–1.75 eV. The direct energy band gap was found annealing temperatures dependent. The absorption coefficient was >10⁴ cm⁻¹ for incident photons having energy greater than the band gap energy. Optical density was observed also dependent on postdoping annealing temperature. All samples were found having p-type conductivity. These films are strong potential candidates for photovoltaic applications like solar cells.     

基于MoO3和Re-Bphen修饰有机太阳能电池性能的研究

有机太阳能电池(OSCs)的性能与材料及器件结构密切相关。以MoO3为阳极缓冲层,有机金属配合物Re-Bphen为阴极缓冲层,制备了结构为ITO/MoO3/CuPc/C60/Re-Bphen/Al的OSCs。在标准太阳光照条件下,当MoO3和Re-Bphen的厚分别为5nm和8nm时实现了器件的最佳性能,能量转换效率(PCE)和器件寿命均显著提高。结合器件结构,分析了工作机制。