Cr、Co、Mn磁性对ZnO压敏特性影响的机理研究

研究了不同浓度Cr、Co和Mn的掺杂对ZnO-PbO-B2O3陶瓷压敏特性的影响.实验表明,ZnO平均晶粒尺寸随各元素掺杂量增加而逐渐变大,压敏电压也随之升高,非线性系数随各元素掺杂量增加而先增大后减小,漏电流先减小后增大.分析认为,过渡族金属元素掺杂对ZnO压敏材料电性能的影响不仅与电子的能级有关,与其自旋特性也紧密相连.ZnO中掺杂的Cr、Mn、Co元素随机取代其中的部分Zn原子后,Cr2+、Mn2+、Co2+在ZnO中产生局域磁矩,会对与其取向不同的自旋电子产生强的散射,这样可增大ZnO陶瓷电阻率和提高其非线性特性.     

Bulk growth of Hg0.8Cd0.2Te single crystals by a combined CVT-seeding technique

The growth of high quality Hg_0.8Cd_0.2Te bulk single crystals by CVT, combined with an in-situ seeding technique, is reported here for the first time. For this purpose, a temperature difference of 590° → 540° C with a gradient of 40°-50° C/cm at the solid-vapor interface, and about 0.1 atm of HgI₂ as a transport agent, were employed. The bulk crystals have the expected stoichiometry and compositional homogeneity. Etch pit densities of 10⁴-10⁵ cm⁻² on the (111) face and hitherto unreported etch pits on the (100) face were observed in this work. Possible origins of the sub-grain structure are discussed.     

Stochastic Modeling of TCP in Networks with Abrupt Delay Variations

An analytical model of TCP (Transport Control Protocol) over an end-to-end path with random abrupt round-trip time (RTT) changes is presented. Modeling the RTT as a stochastic process, we analytically quantify and compare between the degree of degradation of the steady-state average throughput and window size due to spurious retransmissions for the different versions of TCP (Reno/NewReno versus Tahoe). The modeling methodology in this paper is used for evaluating different design alternatives for TCP for highly dynamic networks.     

Water Vapor Permeability of Whey Protein Emulsion Films as Affected by pH

The water vapor permeability (WVP) of whey protein isolate-beeswax emulsion films was investigated as related to pH. Lower WVP was observed for films cast from solutions at pH 7.0. When pH of the film-forming solution was lowered, resulting film WVP increased. At the isoelectric point, WVP was the highest. As pH of the emulsion approached pI, a sharp change in viscosity occurred due to an increase in protein aggregation. This increase in viscosity probably lowered lipid mobility and reduced interconnectivity among lipid droplets, resulting in the higher WVP. For minimum WVP, such films should be applied at pH different from pI.     

Open-tube vapor transport epitaxy of Hg1−xCdxTe

A novel set-up for horizontal open-tube vapor transport epitaxy of Hg_1−xCd_xTe films is described. Mirror-like Hg_1−xCd_xTe epitaxial layers with thicknesses up to 40 Μm were grown and characterized. The growth temperature ranged from 380 to 550‡C, with growth rates of the order of 0.5–7 Μm per hour. The concentration depth profiles and the optical and electrical properties of relatively uniform films with x≈0.3–0.4 are reported. The process kinetics are studied. A simple model which takes into account the reactions occurring at the boundaries of the epitaxial layer and the interdiffusion in the epilayer is presented and discussed. The model fits the experimentally observed characteristics of the epitaxial growth process. A constant growth rate leading to a linear dependence of film thickness upon deposition time y–y_i=k_s t is derived. The reaction rate constant k is given by k_s=k_oe^−Ea^/kT with k_o=0.18 cm-sec⁻¹and the energy of activation E_a=1.12 eV.     

Metalorganic InP and Inx Ga1-x,Asy P1-y,on InP epitaxy at atmospheric pressure

We present a procedure for the MOVPE of InP as simple as the one currently used for GaAs. InP and InGaAsP alloys are grown on InP substrates using trimethy1indium (TMI), phosphine, trimethylgallium (TMG) and arsine. The choice of carrier gas is important ; a mixture of hydrogen and nitrogen allowed us to grow uniform layers over large areas at atmospheric pressure, without pyrolizing the phosphine or separating the input reactants. Preliminary characterization results are presented. Most information contained in this paper was presented at the 1983 Electron Materials Conference as paper Cl.     

Chemical sensing by an electrical oscillator: Detection and quantification of cationic surfactants

A new chemical sensing system using an electrical oscillator has been developed. This sensing system measures the electrical ‘non-linearity’ at the surface of an electrode immersed in a test solution: a sinusoidal voltage is applied to the electrode and the higher harmonics of the output current are obtained by Fourier transformation. This sensing system has been used to detect and quantify surfactant molecules in solutions. The relative intensity P₂/P₁ of the peaks of the second (P₂) and first (P₁) harmonics in the output current was found to be linearly correlated with the logarithms of the concentrations of cationic surfactants such as cetylpyridium bromide (CPB) and cetyl-N,N,N-trimethylammonium bromide (CTAB), but not with those of the anionic surfactant sodium dodecyl sulfate (SDS) or the neutral surfactant Triton X-100. The reproducibility of this sensing system was shown to be excellent.     

TD-LTE系统同频干扰环境下的IRC接收机设计

TD-LTE系统采用了MIMO（Multiple-Input Multiple-Out-put）和OFDMA（Orthogonal Frequency Di-vision Multiple Access）技术相结合的方案,极大地提高了系统的容量,但是由于频谱资源的限制和不连续分布情况,使得TD-LTE系统的组网不能使用...     

Two effects of 1,8-diiodooctane on PTB7-Th:PC71BM polymer solar cells

To obtain higher device performance, the ideal bulk heterojunction (BHJ) morphology should feature both nanophase separation to increase charge generation and bi-continuous percolating networks to increase charge transport. In this paper, solvent additive, 1,8-diiodooctane (DIO), was used in PTB7-Th:PC₇₁BM blend to improve BHJ morphology. The effect of DIO on charge generation and charge transport were studied carefully. Experimental study indicated that the effect of DIO on charge generation and charge transport are conflicted. Positive effects of DIO, which were induced by nanophase separation for charge generation in BHJ, are proved by the results of internal quantum efficiency (IQE) and photocurrent density (J_ph), and negative effects of DIO on charge transport has been investigated according to the time-of-flight secondary ion mass spectrometer (TOF-SIMS).     

超晶格材料

本文了与当今研究超晶格材料相关的几个重要问题。