掺杂Yb的TiO2光催化剂的制备和性能

采用溶胶-凝胶法制备了Yb掺杂TiO2纳米光催化剂,并通过XRD和BET等手段进行了表征.以对苯二甲酸作为探针分子,结合化学荧光技术研究了光催化剂表面羟基自由基的生成;并以苯酚为光催化降解反应模型化合物,考察了光催化剂的活性.测定了苯酚在TiO2和Yb掺杂TiO2光催化剂上的吸附常数.结果表明：Yb掺杂使TiO2的粒径减小,比表面积增大,同时导致羟基自由基的生成速率增大.Yb掺杂有利于反应底物在催化剂表面的吸附,Yb的最佳掺入量为Yb/Ti摩尔比=0.8%.     

最快晶体管的频率接近太赫兹

Robert J.Mears是用于宽带互联网的铒掺杂光纤放大器(EDFA)的发明者。他在寻找将光器件和波导结合到硅中的方法时,发现了一个有趣的结果:一种特殊的硅超晶格结构可以加速某一个     

Study on Luminescence Properties of High-Density Phosphors BiTaO4：Pr^3＋ and BiTaO4

The photoluminescence properties of BiTaO4:Pr^3 and BiTaO4 at room temperature were studied, and the infrared transmission and diffusion reflection spectra of BiTaO4 were measured. The photoluminescence spectrum of BiTaO4 peaks at about 420, 440 and 465nm. There has an obvious excitation band from 330 to 370nm. The photoluminescence spectrum of BiTaO4:Pr^3 consists of the characteristic emission of Pr^3 , and its main peak is at 606 nm from ^3P0→^3H6 transition of Pr^3 . Its excitation spectrum consists of the wide band with maximum at 325nm, the wide band in the range of 375-430nm, and the characteristic excitation of Pr^3 .The bands at 325nm and 375-430nm may be from the absorption of the charge transfer transition of the tantalate group and defect energy levels in its forbidden band, respectively.There is energy transfer from host to Pr^3 . Because both the host density and photoluminescence peak intensity of BiTaO4:Pr^3 are superior to PbWO4, BiTaO4:Pr^3 may be a potential heavy scintillator.     

电子材料

提升OLED发光效率磁性掺杂技术显神威；康宁扩充在华光纤生产厂；国产新型12英寸无位错硅单晶生长设备研制成功；中科院物理所合作建立国内首条碳化硅晶片中试生产线；NEC小型薄型高频砷化镓开关IC用于高速无线通信……     

Study on Effect of Flux on CeMgAl11O19：Tb^3＋ Phosphor

High calcination temperature is an important factor in the preparation process of CeMgAl11O19:Tb^3 . To decrease the temperature, different fluxes (H3BO3, MgF2 and AlF3) were tested in order to compare their influence on the luminescence property and particle size distribution of CeMgAl11O19: Tb^3 . The result shows that when the content of MgF2 is 0.1 mol/mol, the intensity of luminescence can attain a maximum. Furthermore, MgF2 can improve the particle size quality of the phosphor. So MgF2 can take the place of the conventional flux H3BO3 to prepare high quality CeMgAl11O19:Tb^3 phosphor. In addition, the relation between phosphor property and content of AlF3 was also studied. The crystal structure of the phosphor was analyzed by XRD method. The phase composition analysis shows that the reason of decrease of the brightness of CeMgAl11O19:Tb^3 phosphor is the emergence of TbAlO3 and α-Al2O3 during the preparation process.     

掺Nd纳米ZnO薄膜特性研究

研究了用真空蒸发法在玻璃衬底上制备稀土掺杂纳米ZnO薄膜结构、导电性及光透射性能。结果显示 ,在 5 0 0℃氧化、热处理稀土元素Nd掺杂后能够明显改善纳米ZnO薄膜的结构特性 ,薄膜的晶粒尺寸随掺杂含量的增加而减小。掺Nd使ZnO薄膜的电性能有所改善但使纳米ZnO薄膜的光透射性有所降低。     

BPxN1-x薄膜的制备及磷元素对其光学能隙的影响

本文从应用出发，选择光学石英为衬底，采用热丝辅助射频化学气相沉积的方法沉积BPxN1—x薄膜，对样品进行了X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外—可见等测试。XRD、SEM结果显示薄膜多晶态，表面形貌随时间变化，最终为胞状；紫外—可见光光谱结果显示BPxN1—x薄膜的紫外吸收边随沉积时间的加长、PH3流量的增加而向长波长方向移动。因此，该材料的光学能隙可以通过生长工艺适当调整。另外，BPxN1—x薄膜与液晶层能较好匹配等特性更使其适用于紫外空间光调制器。     

Preparation and Properties of Sintering Additives Coated Si3N4 from Heterogeneous Nucleation Processing

The sintering additives such as Al2O3 and /or Y2O3 were coated on the surfaces of Si3N4 particles via heterogeneous nucleation processing using a buffered pH solution as the precipitation reagent .They nucleated and grew only on the surfaces of Si3N4 and did not form sol particles in solution by TEM observation .The isoelectric point(IEP) of coated Si3N4 was different from that of as-received Si3N4.The IEP of Al(OH)3-coated Si3N4 occurred at pH8.4, which is close to that of alumina .When Al(OH)3-coated Si3N4 particles were coated with Y(OH)3,the IEP of coated Si3N4 powder shifted from pH8.4 to pH9.2 ,similar to that of yttria.In addition ,the rheological data showed that Al2O3 and /or Y2O3 coated Si3N4 suspension is nearly Newtonian and that added Si3N4 suspension shows a shear rate thinning behavior.     

Mg-Si基热电化合物的研究现状

重点综述了Mg-Si基热电化合物的基本特性，该体系热电材料的制备方法与掺杂改性的研究进展，并提出了要重点解决的问题。