优化传输栅下电势分布改善四管像素的电荷转移效率

提出了一种通过优化传输栅下沿电荷转移路径的电势分布来提高电荷转移效率的方法。通过使用非均匀掺杂传输管沟道,形成了传输管沟道内部的电势分布梯度。通过对R1区与传输栅的交叠长度,R1区的掺杂剂量,防穿通注入（APT）与传输栅交叠长度的调整,减小了传输管沟道与箝位光电二极管（PPD）连接区域的电子势垒与电子势阱,增强了二者的电势连接。仿真结果显示,剩余电荷占总电荷的比例由1/104减小至1/107,转移时间由500 ns缩短为110 ns。这意味电荷转移效率得到了提高。     

表层掺杂板条状激光模块仿真研究分析

介绍了一种表层增益板条状激光器模块。提出一种结合光线追迹、有限元、数值分析的仿真方法,建立表层增益激光增益模块的模型。在求解抽运光在该结构内部的分布情况以及其温度场的分布情况时,发现与传统体掺杂的CCEPS结构相比,表层增益激光模块有较高的散热能力以及较低的光学畸变。     

Nd∶GdCOB和Cr∶Nd∶GdCOB晶体的脉冲激光特性

Ca4GdO(BO3)3(GdCOB)是一种新型的自倍频晶体.利用氙灯作泵浦源,对单掺的Nd∶GdCOB和双掺的Cr∶Nd∶GdCOB两种自倍频晶体实现了1061nm～530.5nm自由运转的自倍频转换.单掺和双掺晶体的泵浦阈值能量分别为1.0J和0.92J,自倍频光的最大输出能量分别为1.96mJ和2.46mJ.利用脉冲染料激光作泵浦源,对Nd∶GdCOB晶体获得了1331nm基频光和655nm自倍频红光运转,并获得了530.5nm自倍频绿光输出.     

入射角对镜像掺杂光子晶体光学特性的影响

By means of a transfer matrix method,this paper deduces the transmittance calculation equation of light travellinginlocallydoped(includingonedefectlayer)mirrorheterostructure(ABCCBA)PD(ABCCBA)Qphotonic crystals.In the cases of defect layers being either introduced or not introduced,an ORIGIN simulation shows the influence of incident angle change on the number of photon band gap,bandwidth and defect mode numbers.Studies indicate that when such photonic crystals have 8 mirror cycles and the thickness of defect layer D meets nD dD D0=2 or nD dD D40,the photonic crystal defect mode transmission peak changes significantly.Also,with the change of incident angle,the number of defect mode transmission peaks changes.By altering incident angle and defect layer thickness,we can get photon band gaps and defect mode transmission peaks at different frequency domains and different relative angular frequencies.This provides theoretical reference for achieving light wave multi-channel filtering and tunable filtering.     

掺稀土元素Tm3+石英光纤的研制

描述用液相掺杂技术研制掺Ｔｍ ３＋ 石英光纤并实现其相关参数的控制,并对掺Ｔｍ ３＋ 浓度及其测量方法进行了讨论。     

Bistability of theDX center in GaAs and AlxGa1-xAs,and experimental tests for negativeU of theDX level

We summarize a large body of experimental and theoretical work, especially in Si-doped GaAs and Al _x Ga_1-x As, regarding the bistability of theDX center. There is good evidence that theDX center is just the simple donor, and that each donor can exist in either of two distinct lattice configurations, each with its own spectrum of bound electronic states. Generally, the substitutional configuration binds electrons in shallow hydrogenic states, but many observations also indicate a deep (highly localized) state ofA ₁ symmetry. These states are to be distinguished from bound states of a lattice-distorted configuration, the lowest-lying of which is the deepDX level. The occupation of theDX level in thermal equilibrium with the states of the conduction band can be reasonably well modeled by assuming thatDX is either a one-electron or a two-electron state, and we discuss the reasons for this ambiguity. However, we then show that such thermal equilibrium results are consistent with thermal capture and emission kineticsonly if we assume thatDX is a two-electron state. Our results thus support the model of Chadi and Chang in which the distorted configuration is stabilized by capture of two electrons. In other words, the defect exhibits negative effective correlation energy (negativeU).     

An Ultrastable Nonaqueous Potassium‐Ion Hybrid Capacitor

Potassium‐ion hybrid capacitors (PIHCs) show great potential in large‐scale energy storage due to the advantages of electrochemical capacitors and potassium‐ion batteries. However, their development remains at the preliminary stage and is mainly limited by the kinetic imbalance between the two electrodes. Herein, an architecture of NbSe₂ nanosheets embedded in N, Se co‐doped carbon nanofibers (NbSe₂/NSeCNFs) as flexible, free‐standing, and binder‐free anodes for PIHCs is reported. The NbSe₂/NSeCNFs with hierarchically porous structure and N, Se co‐doping afford highly efficient channels for fast transportation of potassium ions and electrons during repeated cycling process. Furthermore, excellent electrochemical reversibility of the NbSe₂/NSeCNFs electrode is demonstrated through in situ XRD, in situ Raman, ex situ transmission electron microscopy and element mapping. Thus, PIHCs with the NbSe₂/NSeCNFs anode and active carbon cathode achieve a high energy of 145 W h kg^?1 at a current density of 50 mA g^?1, as well as an ultra‐long cycle life of over 10 000 cycles at a high current density of 2 A g^?1. These results indicate that the assembled PIHCs display great potential for applications in the field of ultra‐long cycling energy storage devices.     

PbS/Cu2O异质结的制备和性能表征

采用电化学沉积法在酸性电解液中制备n型Cu2O薄膜,并对其进行Cl掺杂,制备Cu2O-Cl结构.然后利用连续离子吸附法在样品薄膜上复合PbS量子点.通过SEM和UV-vis对样品进行表征,并对样品的光电化学性能进行了测试.结果表明,未掺杂的Cu2O对PbS量子点的吸附能力较强一些,经PbS敏化后的样品在太阳光谱的吸收拓展到了近红外区,PbS/Cu2O和PbS/Cu2O-Cl复合结构的光电化学性能均有所增加,尤其是短路电流密度.PbS复合后的样品转换效率最高仅为0.67％,主要原因是两者能级的不匹配,形成异质结时引入界面态,得不到理想的转换效率.     

First principle study of Nb defects in anatase (101) TiO2 surface

In this work, effects of Niobium (Nb) defects on TiO₂ surface using density functional theory (DFT) are investigated. Based on formation energy of the defects, their occurrences in two different extreme conditions, O-rich and O-poor conditions, are evaluated. Effects of Nb defects on surface and its electronic structure are studied and it is demonstrated that Nb doping widens valence band in deep energy level leaving the band gap without any change and it also lowers oxygen vacancy defect concentration due to the stronger bonding of Nb_sub defect with oxygen atoms specially bridging oxygen (most probable defect site for Oxygen vacancy). Higher density of Nb substitutional defects (Nb_sub) are examined and it is shown that higher density doping of TiO₂ surface leads to uniform distribution of defects over the anatase structure as a result of interaction of Nb defects when they are close and this fact prevents segregation of Nb atoms in Nb-doped TiO₂.     

掺饵光纤放大器测试系统研制

报导了用积木式设计方法、由下列几部分组成的一套以拟合技术为基础的掺饵光纤放大器( EDFA)测试系统 :1低边模抑制波长和功率可调光源 ;2测试控制单元 ;3单色光功率计 ;4控制与数据采集和处理微机系统 ;5专用机柜 ;6系统控制与测试数据采集和处理软件。该系统可以测量EDFA的增益 G、噪声指数 NF和光功率 P等参数及其与波长λ的关系。波长测量范围是 1530～1570 nm,精度为± 0 .1nm;G和 N F的测量不确定度分别为± 0 .5d B和± 0 .7d B;光功率的测量精度为± 0 .2 d B。在这套系统中用“单色光功率计”代替了价格昂贵的光谱分析仪 ,并开发有良好的测试与控制系统软件 ,使该系统成为一套适用性与经济性很好、操作使用灵活、简单快速的 EDFA测试系统