软X射线对血液有形成分表面电荷的影响——2、淋巴细胞和血小板膜电荷的变化

软X射线不仅能引起红细胞表面电荷的变化,同时也能导致淋巴细胞和血小板表面电荷下降,表现为照射后它们的电泳率下降。低剂量范围内,这种电荷的变化是暂时性的,照后4小时降到最低点,24小时后恢复到对照的水平。细胞电泳率的下降与辐射剂量相关。淋巴细胞是一个复杂的细胞群,正常状态下,按细胞在电场中泳动速度的快慢,可分为两个组分:快峰为T细胞,慢峰为B细胞。软X射线照射以后,T和B细胞的电泳率皆减慢,频数分布峰值下降,离散度加大。血小板成分单一,电泳率较一致。 从照射浓集的血小板再加回自身血浆中电泳率的下降较照射血浆再加到血小板中的电泳率下降大得多;受照射的血小板在磷酸缓冲液中电泳率下降较在血浆悬液中严重得多;2000 rad照后,悬浮于血浆中的血小板电泳率能恢复,而悬浮于磷酸缓冲液中则不能恢复,三个方面来看,血浆中可能存在抗辐射因子。超氧化物岐化酶能有效地预防血小板电泳率的下降,从而可阻止血小板的凝聚。     

AHMED experiments on hygroscopic and inert aerosol behaviour in LWR containment conditions: experimental results

Hygroscopic NaOH, CsI, CsOH and inert Ag aerosol behaviour at different temperatures and relative humidities (RH) has been studied in a well instrumented and controlled vessel of 1.81 m³ total free volume. Homogeneous thermal-hydraulic conditions for aerosol measurement in the vessel were achieved. The aerosol number and mass concentration were measured continuously during the experiments using a Condensation Nucleus Counter and a Tapered Element Oscillating Microbalance. The particle size distribution and chemical composition in the test conditions were measured by Berner low pressure impactors. In the case of NaOH the half life of the aerosol mass concentration was more than four times longer at low RH (22%) as compared to high RH (96%). The half lives of the CsOH and CsI aerosols were only twice as long at low RH as compared to high RH. Thus at high RH (96–97%) the half lives of CsOH and CsI were twice as long as the half life for the NaOH aerosol. The faster decay of the NaOH aerosol is due to the smaller density decrease of NaOH during water condensation. CsOH particles grew rapidly to their equilibrium size at all humidities. The measured equilibrium size for CsOH aerosol agree well with the calculated particle size at different RHs. Experimental results were also compared with calculations obtained by severe accident computer codes. These calculated results will be presented in a later paper.     

Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements

Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg_1−xCd_xTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (E_g ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 10² m²Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering. A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed electron mobility and is found to be of the order of 10⁻⁴ of the mass of a free electron.     

The influence of dependence of HEMT’s model parameters on gate and drain voltages on upper boundary of LNA’s linearity

On the basis of numerical model the parameters of high electron mobility transistors (HEMT’s) as a function of gate and drain voltages are obtained. The simulation of nonlinear properties of low noise amplifier cascade with HEMT for various modes of its operation has shown that the account of its dependence simultaneously on both the voltages allows to approach the results of calculation to experimental data.     

Mobility Influences on the Capacity of Wireless Cellular Networks

Capacity has always been a major concern in wireless networks. This letter studies the impact of mobility on the overall system capacity in wireless cellular networks. In this letter, we present a simple system model which we developed to capture the inherent relationships among system capacity, new call blocking probability, handoff dropping probability, call terminating probability, and bandwidth utilization rate. We investigate the complex relationship between mobility and capacity‐related parameters. Through simulation, we demonstrate that mobility has a significant impact on capacity and is reversely proportional to the bandwidth reserved for handoff traffic.     

Integrated Personal Mobility Architecture: A Complete Personal Mobility Solution

The high expectations and demand for users to access the Internet from anywhere at anytime has made user mobility an important part of the design and development of the next generation mobile communications and computing. Traditionally user mobility has been divided into two areas: Terminal Mobility and Personal Mobility. In recent years terminal mobility has focused on the movement of the terminal and developed extensions to IP protocols such as Mobile IP. In contrast, personal mobility has only received limited attention, and is somewhat lagging behind. This research has either focussed on personal mobility in communications or personalisation of operating environments. As a result, to date no framework for providing true personal mobility has emerged. In this paper, we introduce a new personal mobility framework called IPMoA (Integrated Personal Mobility Architecture), which integrates both aspects of personal mobility to provide a complete personal mobility solution, and illustrate the viability of this approach through a proof-of-concept implementation.     

一种新的HEMT小信号模型参数提取方法

介绍了一种高电子迁移率晶体管(HEMT)的小信号参数提取方法——综合多偏置点优化参数提取法。该文首先推导并提出了器件的模型、确定外部参数和内部参数，其次介绍了多偏置点优化算法。最后，以PHEMT器件为例进行鲁棒性和精确性测试，实验采用一系列随机起始值，结果表明，提取的参数值与经验值相差小于1％。     

Kinetics of DyNi2 film growth by electrochemical implantation

Electrochemical implantation was performed at Ni electrodes to form DyNi₂ films at 0.55 V (vs. Li⁺/Li), 0.62 V, and 0.70 V for 0.5-5.0 h in a molten LiCl-KCl-DyCl₃ (0.50 mol%) system at 700 K. It was found that the DyNi₂ films grew linearly with time with coulomb efficiency of about 100%. The obtained growth rates were higher at more negative potentials, i.e., 0.47 μm min⁻¹ at 0.55 V, 0.32 μm min⁻¹ at 0.62 V, and 0.14 μm min⁻¹ at 0.70 V. On the analogy of the metal oxide growth, the observed rapid and linear growth of DyNi₂ films may be explained by the existence of the outer and inner DyNi₂ layers.     

Monte-Carlo Simulation of Clocked and Non-Clocked QCA Architectures

We present a Monte Carlo simulation of two implementations of Quantum Cellular Automaton (QCA) circuits: one based on simple ground state relaxation and the other on the clocked cell scheme that has recently been proposed by Tóth and Lent. We focus on the time-dependent behavior of two basic circuits, a binary wire and a majority voting gate, and assess their maximum operating speed and temperature requirements for different sets of fabrication parameters.