Highly oriented star-like patterns observed on GaSe epilayers grown on Si(111)

Epitaxial lamellar gallium selenide (GaSe) semiconductors have been grown on trench-patterned silicon (Si) substrates by molecular beam epitaxy. An intriguing star-like patterned morphology was identified by atomic force microscopy on these epilayers. This non-trivial feature can be correlated with the accumulation of stacking faults of two concurrent epitaxial domains around self-oriented triangular pits developed earlier on the Si(111) surface by the chemical etching. Crystallographic considerations show how the stars can be formed.     

Sintering studies of nano-crystalline zinc oxide

Sintering and grain growth of nano-crystalline undoped ZnO has been studied in detail over a wide range of temperature and holding time. Below 800 °C, sintering of over 70% theoretical density is not observed, irrespective of particle size. At 900 °C for 6 h, the nano-crystalline sample sinters to 99% of theoretical density whereas the density for as received sample is 93% of theoretical density. However, at 1300 °C or higher, the densification is found to be much faster and after a few hours becomes independent of holding time. Grain growth studies reveal a similar feature of attaining saturation over holding time. The average saturated grain size is found to be ∼1.5 and ∼2.2 μm at 800 and 900 °C, respectively, while at 1300 °C or higher, it is in between 12 and 13 μm.     

A place for Bobo in play therapy.

Some therapists hold that the Bobo and other aggressive toys should be excluded from the playroom as they elicit acting-out behavior that is transferred to the world outside the playroom. However, many therapists view the inclusion of these items as imperative elements that facilitate positive growth and maturation in the child. Interviews with authorities in the field of play therapy support the position that the inclusion of the Bobo is not only useful, but a therapeutic necessity. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Threshold and growth mechanism of fatigue cracks under mode II and III loadings

ABSTRACT The fatigue crack growth behaviour of 0.47% carbon steel was studied under mode II and III loadings. Mode II fatigue crack growth tests were carried out using specially designed double cantilever (DC) type specimens in order to measure the mode II threshold stress intensity factor range, ΔK_IIth. The relationship ΔK_IIth > ΔK_Ith caused crack branching from mode II to I after a crack reached the mode II threshold. Torsion fatigue tests on circumferentially cracked specimens were carried out to study the mechanisms of both mode III crack growth and of the formation of the factory‐roof crack surface morphology. A change in microstructure occurred at a crack tip during crack growth in both mode II and mode III shear cracks. It is presumed that the crack growth mechanisms in mode II and in mode III are essentially the same. Detailed fractographic investigation showed that factory‐roofs were formed by crack branching into mode I. Crack branching started from small semi‐elliptical cracks nucleated by shear at the tip of the original circumferential crack.     

Crack closure in fibre metal laminates

GLARE is a fibre metal laminate (FML) built up of alternating layers of S2-glass/FM94 prepreg and aluminium 2024-T3. The excellent fatigue behaviour of GLARE can be described with a recently published analytical prediction model. This model is based on linear elastic fracture mechanics and the assumption that a similar stress state in the aluminium layers of GLARE and monolithic aluminium result in the same crack growth behaviour. It therefore describes the crack growth with an effective stress intensity factor (SIF) range at the crack tip in the aluminium layers, including the effect of internal residual stress as result of curing and the stiffness differences between the individual layers. In that model, an empirical relation is used to calculate the effective SIF range, which had been determined without sufficiently investigating the effect of crack closure. This paper presents the research performed on crack closure in GLARE. It is assumed that crack closure in FMLs is determined by the actual stress cycles in the metal layers and that it can be described with the available relations for monolithic aluminium published in the literature. Fatigue crack growth experiments have been performed on GLARE specimens in which crack growth rates and crack opening stresses have been recorded. The prediction model incorporating the crack closure relation for aluminium 2024-T3 obtained from the literature has been validated with the test results. It is concluded that crack growth in GLARE can be correlated with the effective SIF range at the crack tip in the aluminium layers, if it is determined with the crack closure relation for aluminium 2024-T3 based on actual stresses in the aluminium layers.     

八种新功能晶体的比热及其与相变掺杂物关系的实验研究

本文对八种新型功能晶体Ｌｉ２Ｂ４Ｏ７、Ｂｉ１２ＴｉＯ２０、Ｂｉ１２ＧｅＯ２０、Ｂｉ１２ＧｅＯ２０、Ｂｉ４Ｇｅ３Ｏ１２、Ｓｒ１－ｘＢａｘＮｂ２Ｏ６（ｘ＝０．３３，０．４８）、ＬｉＴａＯ３等在１３０～９７３Ｋ范围内的比热行为及其与相变、组分之间的关系进行了实验研究，给出了比热的多项式拟合方程，并与用纽曼－卡普定律及用Ｗｉｋｅｌｍａｎｎ经验方程的比热计算值作了对比，为晶体比热的估算提供了依据和方法。     

Corrosion fatigue short crack growth behaviour in a high strength steel

The influence of an aggressive environment (0.6 M, aerated NaCl solution) on short fatigue crack initiation and growth behaviour has been studied. The study involved three major test series, namely: air fatigue, corrosion fatigue, and intermittent air fatigue/corrosion fatigue. The above tests carried out under fully reversed torsional loading conditions at a frequency of 5 Hz, showed that it was the non-metallic inclusions which took part in crack initiation resulting from debonding at metal matrix/inclusion interface and pitting of inclusions in both air and corrosove environments, respectively. Short fatigue crack growth results in these two environments obtained by using plastic replication technique, indicated a large effect of microstructure i.e. prior austenite grain boundaries. The stage/stages at which the environmental contribution was dominant has been discussed by considering the results achieved from intermittent tests. However, the mechanisms involved in corrosion fatigue short crack growth have also been described in the light of results obtained from futher investigations carried out by conducting corrosion fatigue tests under applied cathodic potential conditions and tests on hydrogen pre-charged specimens under air fatigue and uniaxial tension conditions.     

Sixty years of dislocations

It is well-known that with the appearance of three independent papers by Taylor, Polanyi and Orowan in the year 1934, the concept of crystal dislocations was born. Since then, dislocation theory has had many spectacular successes. It is quite appropriate therefore to be aware of the state of development of this exciting subject, sixty years after its discovery. A flavour for the vast subject of the applications of dislocation mechanisms to real materials is presented by choosing three examples, one each, drawn from metallurgy, physics and electronics. The topic of ‘Strength of metals and alloys’ is the first one, as this is also the author’s area of research. The phenomenon of solidification and crystal growth forms the next topic, especially in view of the seminal contributions made by A R Verma and his school from India. Dislocations play a useful role in the strengthening of solids, but how influential are they in affecting the performance of modern semiconductor devices? In the third example, the interesting and painstaking work done to settle this question is reviewed. Can we regard carbon fibre as thetransistor of dislocation theory? How shall we understand the long-established effects such as corrosion-fatigue, superplasticity and shape memory as well as the electrochemical and electro-mechanical properties of dislocations in semiconductor and non-metallic crystals? Answers to these questions belong to the realms of the future developments in dislocations. The talk is concluded with a discussion of these topics.     

超薄SiO2层的热生长

隧道小孔中超薄ＳｉＯ２的生长是ＥＥＰＲＯＭ电路制造的关键工艺之一。采用ＳＵＰＲＥＭ－Ⅲ工艺模拟程序对超薄ＳｉＯ２的热生长进行了工艺模拟，经过大量的工艺实验及优化，确定了超薄ＳｉＯ２的最佳生长条件，生长出的ＳｉＯ２性能良好，完全可满足ＥＥＰＲＯＭ研制的要求。