High‐Performance Metal‐Substrate Power Module for Electrical Applications

This paper demonstrates the performance of a metal‐substrate power module with multiple fabricated chips for a high current electrical application, and evaluates the proposed module using a 1.5‐kW sinusoidal brushless direct current (BLDC) motor. Specifically, the power module has a hybrid structure employing a single‐layer heat‐sink extensible metal board (Al board). A fabricated motor driver IC and trench gate DMOSFET (TDMOSFET) are implemented on the Al board, and the proper heat‐sink size was designed under the operating conditions. The fabricated motor driver IC mainly operates as a speed controller under various load conditions, and as a multi‐phase gate driver using an N‐ch silicon MOSFET high‐side drive scheme. A fabricated power TDMOSFET is also included in the fabricated power module for three‐phase inverter operation. Using this proposed module, a BLDC motor is operated and evaluated under various pulse load tests, and our module is compared with a commercial MOSFET module in terms of the system efficiency and input current.     

Differential bidirectional transceiver for on-chip long wires

This work presents a differential bidirectional transceiver (DBT) for on-chip long wires. To enhance operating speed and reduce power consumption, the voltage swing on the wire is reduced using current-mode scheme. Consequently, our design performs higher data rate when wire length is extended. Moreover, adoption of differential scheme with a moderate tradeoff of area effectively lowers power supply noise and common mode noise. The receiver adopts four input differential pairs along with current summation circuit to evaluate small signal differences of every that state resulted from transmitting different data. Simulations using 0.18-μm device model indicates that the total input to output delay over a 5 mm long wire is 0.96 ns, with a power consumption of 8.724 mW at a speed of 1.2 Gbps and a maximum achievable data rate of 1.5 Gbps. A test chip is realized and successfully verifies the performance of the transceiver.     

A cascade energy band structure enhances the carrier energy in organic vertical-type triodes

Organic vertical-type triodes (OVTs) based on the cascade energy band structure as emitter layer are studied. The electric characteristics were dramatically enhanced while incorporating the cascade energy under current driving and voltage driving modes. The improvement is attributed to that injection carriers can obtain higher energy through a stepwise energy level. When the device has a layered structure of F₁₆CuPC (10 nm)/PTCDI (10 nm)/pentacene (100 nm) in emitter, it exhibits a common-base transport factor of 0.99 and a common-emitter current gain of 225 under current driving mode and exhibits a high current modulation-exceeding ?520 μA for a low collector voltage of ?5 V and a base voltage of ?5 V and the current on/off ratio of 10³ under voltage driving mode. Furthermore, we realized first organic current mirror that exhibited out/in current ratio of 0.75 and output resistance of 10⁵ Ω by using the OVTs.     

一种新型LED恒流驱动电路SC1674S

本文介绍了一种新型的发光二极管（LED）恒流驱动电路SC16749,该电路应用了“智能均衡脉宽调制（B-PWM）”的专利技术,可同时提高LED显示系统的亮度利用率和刷新率这两项重要性能指标,有效解决传统LED显示系统中亮度利用率和刷新率之间的矛盾,提升整个LED显示系统的显示质量。     

不同电流密度对直流电镀填盲孔的影响研究

电镀填盲孔是HDI加工的一个重要工序。本文通过研究不同电流密度在不同电镀时间内的填孔行为,并尝试通过采用组合电流密度来提升电镀填盲孔效果,从而实现降低填孔镀铜量的目的。     

Highly linear micropower class AB current mirrors using Quasi-Floating Gate transistors

A design approach to achieve low-voltage micropower class AB CMOS cascode current mirrors is presented. Both class AB operation and dynamic cascode biasing are based on the use of Quasi-Floating Gate transistors. They allow high linearity for large signal currents and accurately set quiescent currents without requiring extra power consumption or supply voltage requirements. Measurement results show that dynamic cascode biasing allows a wider input range and a linearity improvement of more than 23 dB with respect to the use of conventional biasing. A THD value better than −35 dB is measured for input amplitudes up to 100 times the bias currents. Two class AB current mirror topologies are proposed, with slightly different ways to achieve class AB operation and dynamic biasing. The proposed current mirrors, fabricated in a 0.5 µm CMOS technology, are able to operate with a supply voltage of 1.2 V and a quiescent power consumption of only 36 µW, using a silicon area <0.025 mm².     

Current saturation effect for pentacene-based static induction transistor under negative drain-source and gate voltages

Usually, the drain-source current (I_DS) increases with positive drain-source voltage (V_DS) for pentacene-based organic static induction transistor (OSIT) ITO(Source)/Pentacene/Al(Gate)/Pentacene/Au(Drain) and it shows an inherent rectifying property under negative gate voltages (V_G), i.e. the slope of I_DS vs. V_DS curve increases with V_DS but without any current saturation effect. In this paper, we investigated the electrical characteristics of pentacene-based OSIT ITO/Pentacene(80 nm)/Al(15 nm)/Pentacene(80 nm)/Au under negative V_DS and V_G, and found that I_DS changed from rectifying property to saturation effect when the magnitude of negative V_DS was increased from 0 V to −6 V under negative V_G, and the turn-on voltage (V_ON) moved to larger negative voltages when the magnitude of negative V_G increased and the movement step of V_ON gets smaller after keeping the device for a long time, and the possible mechanisms for such a kind of current modulation were discussed.     

新型Buck-Boost逆变器及其控制策略研究

出两个完全相同的独立的buck—boost斩波器,输入并联,输出串联构戚一个DC／AC逆变器,该逆变器实现了单级功率变换,双向功率流,与传统的两级式逆变器相比,具有拓扑结构简单,同时工作的开关元件少,功率密度大,变换效率高等优点。但由于两个斩波器的输出电压要求在较宽范围内变动,故其控制方法和单独的buck-boost斩渡器有所不同,本文对该电路的工作原理和控制方法进行了详细的分析,针对输出电压范围宽的特点,提出了改进的电流控制法,该控制方法采用附加扰动补偿的前馈控制和反馈控制相结合,使两个斩波器的输出电压和逆变器的输出电压都能得到准确的控制,对外界变化能作出快速准确地反应,提高了逆变器对输入电压和负载变化的响应能力。     

Photonic theory of noise

The paper proposes that 1/f noise in materials and devices under non-equilibrium conditions is of electromagnetic origin rather than being related to charge carriers. For samples represented by simple resistors the analysis shows that the noise is due to the discrete nature of photons constituting the impinging electromagnetic flux from the source feeding the resistor. The paper presents detailed analysis of the external and internal electromagnetic fields of the resistor environment, with appropriate interpretation in terms of discrete photons. From quantum theory photons are known to retain their energy under interactions in linear environments. This property implies a departure from macroscopic electromagnetics in that photons cannot be partially transmitted and partially reflected, a phenomenon requiring appropriate modifications of boundary conditions at the resistor surface. These special demands call for inclusion of a supplementary internal resistor mode, serving as a lossless idler which is active only for matching purposes. At the resistor terminals the impinging photons give rise to excitation of RF current and voltage noise with an exact 1/f frequency distribution, which is in agreement with all available experimental measurements. The paper presents detailed formulae for noise spectral densities under general drive conditions from DC and RF sources of arbitrary internal resistance. The presented theoretical noise formulae have the same form as earlier empirical formulae for 1/f noise. With an RF source at frequency f₀ the analysis predicts noise with 1/|f-f₀| frequency distribution, which is compatible with available experimental observations.     

High output impedance current-mode first-order allpass networks with four grounded components and two CCIIs

Eight current-mode first-order allpass networks using second-generation current conveyors (CCII) are presented. Each of the proposed circuits employs two CCIIs, two grounded capacitors and two grounded resistors. The networks offer high output impedances. Experimental results are also included.