1μm宽硅深槽刻蚀技术

介绍了硅深槽刻蚀的基本原理和影响刻蚀效果的几个主要工艺因素。提出了一种实现１μｍ宽的硅深槽刻蚀工艺途径；并给出了１μｍ宽、８μｍ深、侧壁及底部光洁的硅深槽刻蚀工艺条件。     

非晶硅基薄膜的等离子体刻蚀光发射谱检测

本文研究了采用锁定放大相干检测技术的等离子体光发射谱检测系统。用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。分析了检测结果和刻蚀机理。     

直读光度法测定钼铁中的硅

试样经草酸、双氧水分解后，以盐酸羟胺破坏掉多余双氧水。以标准样品作参比，在硫酸－柠檬酸介质中，用钼酸铵显色，抗坏血酸还原，生成稳定的硅钼蓝。此方法可测定１．０％以下的硅，具有快速、准确、灵敏度高等优点。     

Synthesis and characterization of novel copolymers with the trimethylsilyl group for deep‐UV photoresists

N‐(4‐Acetoxyphenyl) maleimide (APMI) and three kinds of comonomers bearing a trimethylsilyl group were copolymerized at 60°C in the presence of azobisisobutyronitrile (AIBN) as an initiator in 1,4‐dioxane to obtain the three IP, IIP, and IIIP copolymers. These copolymers were removed from the acetoxy group in a transesterification process into new IVP, VP, and VIP copolymers with a pendant hydroxyl group. Two modified processes were adopted to prepare photoresists using these copolymers. The first process involved mixing the dissolution inhibitor, o‐nitrobenzyl cholate, with the new copolymers. Second, o‐nitrobenzyl cholate was introduced into the copolymers using 1,8‐diazabicyclo[5.4.0]undec‐7‐ene (DBU) in dimethylformamide (DMF). The cyclic maleimide structure is responsible for the high thermal stability of these copolymers. After irradiation using deep–UV light and development with aqueous Na₂CO₃ (0.01 wt %), the developed patterns showed positive images and exhibited good adhesion to the silicon wafer without using any adhesion promoter. The resolution of these resists was at least 0.8 μm and an oxygen‐plasma etching rate was 1/5.3 to that of hard‐baked HPR‐204. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 83: 2791–2798, 2002; DOI 10.1002/app.10255     

a—Si等离子体刻蚀的研究

将等离子体刻蚀应用于非晶硅的刻蚀中,得到边缘整齐、分辩率高、重复性好、图形清晰的满意效果。通过调整工艺条件,可严格控制刻蚀速率。其特点优于湿式化学腐蚀,是一种非晶硅特性研究和器件制造中值得推广和使用的方法。     

等离子体横向刻蚀硅的特性研究

研究了用SiO2 +Al作掩模 ,SF6 +O2 混合气体等离子体对Si的横向刻蚀 ,其结果表明 ,在SF6 +O2 等离子体气氛中 ,Al是很好的保护膜 ,可以在待悬浮器件下形成大的开孔。因此 ,预计用这种技术 ,可以在Si片上集成横向尺寸为数百微米 ,具有优良高频性能的MEMSRF/MW无源器件 ,如开关、传输线、电感和电容等。     

Approximate feedback linearization of discrete-time non-linear systems using virtual input direct design

The design of feedback-linearization and poles-placement controllers for discrete-time non-linear plants, using Input/Output/State measurements only, is typically addressed via indirect design. In this paper we propose the use of a new technique, based on a Virtual Input Direct Design (VID²) approach. The main feature of such a technique is to reduce the control design problem into a standard non-linear mapping approximation problem, without calling for the preliminary construction of an appropriate model of the plant. As compared with the existing methods, the new one requires less computational effort, while taking full advantage of the non-linear approximation software tools already available. In this paper, the new method is described, a simple theoretical analysis is given, and some numerical examples are presented.     

应用烃类直接检测技术预测天然气藏

柴达木盆地位于青藏高原北部，是中国大型含油气盆地之一，历经４０年的勘探，发现了丰富的油气资源。柴达木盆地东部地区是第四纪沉降与沉积中心，区内第二系生储气岩厚度大、分布广、第四纪新构造运动形成的同生沉积构造发育、保存完整、具有形成大中型天然气田的地质条件。此外，由于该地区含气地层时代新、埋藏浅、成岩与胶结作用差、含气层厚度大、孔渗性好，加之构造条件简单，人文干扰小、是应用烃直接检测技术寻找天然气的有