Experimental research on dynamic response of PZT-5H under impact load

In order to improve the stability of PZT-based sensors, the mechanical, dielectric, ferroelectric and piezoelectric properties of PZT-5H under impact load were studied experimentally by using the separated Hopkinson pressure bar (SHPB) with an electrical output measurement device. At the same time, the experimental study on the material properties of PZT-5H before and after the impact was carried out. The effect of impact cracks on the output voltage of PZT-5H was also analyzed. The results show that the dynamic piezoelectric constants of PZT-5H under low stress impact (10–50 MPa) are different from those under quasi-static state, and the empirical relationship between them and the peak stress is obtained through experiments. The dielectric properties of PZT-5H did not change under low stress impact, but micro-cracks occurred in the material and dielectric loss increased at high frequencies. Under short circuit, the residual polarization intensity of PZT-5H decreases sharply due to impact load. While the impact load causes the secondary polarization and the increase of the residual polarization intensity of PZT under open circuit. When the stress is over 45 MPa, the PZT-5H breaks. The formation of cracks causes abnormal discharge voltage and gap discharge.     

无源光网络标准发展及关键技术研究

无源光网络(Passive Optical Network,PON)作为当今接入网的主要技术解决方案,具有带宽使用效率高、传输距离远、抗干扰能力强等特点.通过研究PON技术的发展动态,本文首先归纳了各种PON技术的产生背景和应用特点,整理出各技术间的连接关系及主要标准;其次介绍了PON技术的帧结构,并对带宽、波长、传输模式等PON技术的主要参数进行了汇总;然后将国内外研究热点进行划分,围绕媒体访问控制协议、帧结构、动态带宽分配算法、节能机制等关键技术,阐述了其研究现状及在PON中的重要作用;最后对PON技术的发展趋势进行了展望.     

Effect of Moving Speed of Charged Metallic Spherical Electrode on Electrostatic Discharge

In this investigation, the nature of the electrostatic discharge (ESD) that occurs when a charged object moves toward a stationary grounded object is experimentally clarified. The spark lengths, discharge currents, and induced voltages in a magnetic probe were measured when a charged metallic spherical electrode connected to a 422 pF capacitor approached a stationary grounded object, which was the current target, for different moving speeds of the charged metallic spherical electrode in a range of 1 mm/s to 100 mm/s. The charge voltages of the capacitor were +6.5 kV and +10 kV. Based on the results, the average gap length shortened with the speed of the spherical electrode. The average peak values of the discharge current and the induced voltage were likely to increase with the speed of the spherical electrode. The average rise times of the discharge current and the induced voltage were likely to drop with the speed of the spherical electrode. The relation between the spark length and the discharge current due to the ESD can be explained qualitatively by using an equation derived from the spark resistance formula proposed by Rompe and Weizel.     

Voltage reference architectures for low-supply-voltage low-power applications

This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm² and 0.08 mm², respectively.     

The PAR(p) Interconfigurations model used by the Brazilian Electric Sector

This study discusses the characteristics of the Periodic Autoregressive model, PAR(p), which is used to generate synthetic series of inflow energies that serve as entries for computer platforms that implement the planning and expansion of the operations of the BES – the Brazilian Electric Sector (SEB – Sistema Elétrico Brasileiro). The methodology for the design of a generating plant is presented in addition to the fundamentals of the “PAR(p) Interconfigurations” Model, which is referred to as the Inflow Energy Generation Model (IEGM) in this study. The major contribution of this study is to provide the first scientific discussion of the representation of multiple configurations using the PAR(p) model. For this purpose, several topics related to the time series are discussed, such as the definition of the model order, the matter of stationarity and the need to address possible outliers. Finally, a case study is presented, wherein the results of the estimation and generation of the described model’s scenarios are demonstrated.     

低觉醒脑电识别与唤醒的可穿戴系统研究

为智能化地识别警戒作业人员出现的低觉醒、注意力下降的生理状态，本文介绍了一种基于FPGA和脑电信号处理的低觉醒状态检测与唤醒系统，系统通过传感器从大脑头皮采集脑电信号，转换为数字信号，经傅里叶变换获取了脑电信号的θ相对能量、α相对能量、重心频率、谱熵等4个特征量，由4个特征量表征低觉醒状态并运用支持向量机对低警戒状态进行识别，当识别出低觉醒状态时采用声音报警模块发出声音，唤醒警戒作业人员。设计系统能够较好地识别出低觉醒状态，识别率达90.8%，可为提高警戒作业工作绩效提供一种可穿戴的智能装备。     

Estimation of power density in IMPATT using different materials

ABSTRACT

The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n⁺-n-p-p⁺) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 10¹⁰ Wm^?2 and the Si-based counterpart has lowest power density of order 10⁶ Wm^?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances.     

智能型电子式变频电动执行器及其应用

针对原有电动执行器只有以低速运行，通过极强的微调才能修正微小偏差这一缺点，提出智能型电动执行器与各种阀体譬合，利用数字化变频技术，改造目前采用模拟技术的电动执行器，使之具有变速运行、动态响应块，调节定位精度高、稳定性好，故障率低、使用寿命长和应用场合广泛的特点。     

数字储频及其性能分析

文章介绍了3种宽带数字储频的基本结构，分析了宽带数字储频的一个重要指标——量化噪声，根据输出信号频谱的杂散电平比较了三种结构的优劣。     

AT89C2051芯片在车载产品中的应用

本文论述了采用单片机技术研制成功的泊车用超声波测距仪的基本原理,用AT89C2051作为控制器的实现方案,以及采用软件校正的方法,提高了测量精度和整机的可靠性.