Electric double‐layer capacitor module with series‐parallel reconfigurable cell voltage equalizers

When electric double‐layer capacitors (EDLCs) are connected in series, a cell voltage imbalance occurs due to nonuniform cell properties. Cell voltage imbalance should be minimized to prolong cycle lives and maximize the available energy of cells. In this study, we propose a series‐parallel reconfigurable cell voltage equalizer that is considered suitable for energy storage systems using EDLCs instead of traditional secondary batteries as the main energy storage sources. The proposed equalizer requires only EDLCs and switches as its main circuit elements, and it utilizes EDLCs not only for energy storage but also for equalization. An equivalent circuit model using equivalent resistors that can be regarded as an index of equalization speed is developed. Current distribution and cell voltage imbalancing during operation are quantitatively generalized. Experimental charge–discharge tests were performed on the EDLC modules to demonstrate the performance of the cell voltage equalizer. All the cells in the modules could be charged/discharged uniformly even when a degradation‐mimicking cell was intentionally included in the module. The resultant cell voltage imbalances and current distributions were in good agreement with those predicted by mathematical analyses. © 2012 Wiley Periodicals, Inc. Electr Eng Jpn, 181(4): 38–50, 2012; Published online in Wiley Online Library (wileyonlinelibrary.com). DOI 10.1002/eej.21287     

Active device‐less voltage equalization charger using capacitors,diodes, and an AC power source

Conventional cell/module voltage equalizers or equalization chargers based on traditional DC‐DC converters require numerous switches or transformers as the number of series connections increases; therefore, their cost and complexity tend to increase and their reliability decreases as the number of connections increases. This paper proposes a novel voltage equalization charger that consists only of passive components such as capacitors, diodes, and a transformer. The fundamental operating principle, major features, and derivation of equivalent DC circuits are presented. A symmetrical configuration is also proposed to mitigate the RMS current flowing through energy storage cells in the charging process. Simulations and experimental charging and cycle tests were performed on series‐connected electric double‐layer capacitor modules to demonstrate the equalization performance. The experimental and simulation results were in good agreement, and the voltage imbalances were gradually eliminated as time elapsed even during charge‐discharge cycling. © 2012 Wiley Periodicals, Inc. Electr Eng Jpn, 181(3): 39‐48, 2012; Published online in Wiley Online Library ( wileyonlinelibrary.com ). DOI 10.1002/eej.21288     

一种基于卫星IP网络的数据链路层协议

通过分析卫星通信网络发展趋势,阐述卫星网络中现有的数据链路层协议,梳理归纳卫星网络的特点及影响,提出了一种新型卫星网络数据链路层协议(New Satellite Link Protocol,NSLP)。分析对比表明,该协议能够有效降低链路层报头开销,提高信息传输效率。在实际应用中,新型协议具有能够简化数据链路层的功能,有与TCP/IP协议兼容性好、与IP协议耦合度高、节约星上资源等诸多优点,有利于卫星IP网络整体性能的有效提升。     

Effect of sodium doping on graded Cu(In1−xGax)Se2 thin films prepared by chemical spray pyrolysis

In the present work we have studied the effect of Na on the properties of graded Cu(In_1−xGa_x)Se₂ (CIGS) layer. Graded CIGS structures were prepared by chemical spray pyrolysis at a substrate temperature of 350 °C on soda lime glass. Sodium chloride is used as a dopant along with metal (Cu/In/Ga) chlorides and n, n-dimethyl selenourea precursors. The addition of Na exhibited better crystallinity with chalcopyrite phase and an improvement in preferential orientation along the (112) plane. Energy dispersive analysis of X-rays (line/point mapping) revealed a graded nature of the film and percentage incorporation of Na (0.86 at%). Raman studies showed that the film without sodium doping consists of mixed phase of chalcopyrite and CuAu ordering. Influence of sodium showed a remarkable decrease in electrical resistivity (0.49–0.087 Ω cm) as well as an increase in carrier concentration (3.0×10¹⁸–2.5×10¹⁹ cm⁻³) compared to the un-doped films. As carrier concentration increased after sodium doping, the band gap shifted from 1.32 eV to 1.20 eV. Activation energies for un-doped and Na doped films from modified Arrhenius plot were calculated to be 0.49 eV and 0.20 eV, respectively. Extremely short carrier lifetimes in the CIGS thin films were measured by a novel, non-destructive, noncontact method (transmission modulated photoconductive decay). Minority carrier lifetimes of graded CIGS layers without and with external Na doping are found to be 3.0 and 5.6 ns, respectively.     

Fabrication of CuInS2/CNTs absorber layers by sol–gel method

In this work, CuInS₂/multiwalled carbon nanotube (MWCNT) layers are fabricated by the sol–gel spin-coating method. We introduce two forms of MWCNTs into a CIS₂ solution, washed functional multiwalled carbon nanotubes (W-FMWCNTs) and unwashed-functional multiwalled carbon nanotubes (UW-FMWCNTs), in order to investigate the effects of MWCNTs and an acidic environment on the physical properties of the CIS₂ absorber layers. The structure and morphology of the samples are investigated by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM), respectively. The XRD study shows that all samples crystallize in a tetragonal structure. The results obtained from the optical, thermo-electric, and electrical measurements indicate that the two groups of CIS₂ layers prepared using W- and UW-FMWCNTs show the opposite behaviors. The Seebeck coefficient (SC) measurements indicate possible formation of a p–n junction.     

栅侧壁隔离层对45nm NOR闪存栅极干扰的影响

为了研究侧壁隔离层对闪存器件可靠性的影响,分别制备了Si3N4和SiO2-Si3N4-SiO2-Si3N4 (ONON)复合层作为栅侧壁隔离层的45 nm或非闪存(NOR flash)器件,对编程后、循环擦写后的闪存器进行栅极干扰的测试,讨论了不同栅侧壁隔离层对栅极干扰的影响.结果表明,虽然纯氧化硅隔离层可减少NOR自对准接触孔(SAC)刻蚀时对侧壁隔离层的损伤,但其在栅极干扰时在氧化物-氮化物-氧化物(ONO)处有更高的电场,从而在栅干扰后阈值电压变化较大,且由于在擦写操作过程中会陷入电荷,这些电荷在大的栅极电压和长时间的栅干扰作用下均会对闪存器的可靠性产生负面的影响.ONON隔离层的闪存器无可靠性失效.因此以ONON作为侧壁隔离层比以纯氮化硅作为侧壁隔离层的闪存器件具有更好的栅干扰性能.     

无线传感器网络体系结构和关键技术研究

文章介绍了无线传感器网络的体系结构,提出了一种基于跨层设计的管理控制机制;在对无线传感器网络的关键技术,如媒体接入控制(MAC)技术和无线路由协议,分别进行阐述和比较的基础上,提出了一种把简单的IEEE 802 MAC协议应用于无线传感器网络的思想;为了提高系统容量,提出了多信道策略,可以用来有效减少系统碰撞阻塞率,减少接入时延;认为虽然无线传感器网络的应用前景非常广阔,但是仍存在很多问题,除了要尽量减少功耗外,必须提高系统容量,减少碰撞阻塞率,以加快无线传感器网络实用化的进程.     

Enhanced storage/operation stability of small molecule organic photovoltaics using graphene oxide interfacial layer

Graphene and graphene oxide (GO) have been applied in flexible organic electronic devices with enhanced efficiency of polymeric photovoltaic (OPV) devices. In this work, we demonstrate that storage/operation stability of OPV can be substantially enhanced by spin-coating a GO buffer layer on ITO without any further treatment. With a 2 nm GO buffer layer, the power conversion efficiency (PCE) of a standard copper phthalocyanine (CuPc)/fullerene (C₆₀) based OPV device shows about 30% enhancement from 1.5% to 1.9%. More importantly, while the PCE of the standard device drop to 1/1000 of its original value after 60-days of operation-storage cycles; those of GO-buffered device maintained 84% of initial PCE even after 132-days. Atomic force microscopy studies show that CuPc forms larger crystallites on the GO-buffered ITO substrate leading to better optical absorption and thus photon utilization. Stability enhancement is attributed to the diffusion barrier of the GO layer which slow down diffusion of oxygen species from ITO to the active layers.     

EPR and Raman study of silicon layers obtained by gas detonation spraying

We demonstrate availability of gas detonation deposition spraying (GDS) to obtain silicon layers that can be used for production of solar cells. Silicon powder remaining as secondary raw material of silicon and/or silicon production is used during GDS. To study defects and structural perfection of initial powders and obtained layers, electron paramagnetic resonance (EPR) and Raman spectroscopy are used. It is shown that one part of EPR spectra displays resonances originating from different nearest-neighbor configurations of silicon dangling bonds, whereas an increase of the total number of paramagnetic defects in GDS silicon layer is related to the rise of conduction electrons or electrons filled band tail states. Thermal annealing of layers in hydrogen ambience further reduces the number of silicon dangling bonds owing to their passivation. Based on the results of X-ray diffraction, EPR and Raman spectroscopy it is assumed that the GDS Si layers are composed of randomly oriented and partially oxidized monocrystalline silicon grains. It is found that optical and photoelectric properties of the layers obtained indicate a possibility to apply them for solar cells production.     

Interfacial modifying layer-driven high-performance organic thin-film transistors and their nitrogen dioxide gas sensors

Organic thin-film transistors (OTFTs) based on bottom-gate bottom-contact configuration were fabricated by inserting two kinds of modifying layers at the interface of source/drain electrode and organic semiconductor, while nitrogen dioxide (NO₂) sensing capability was also evaluated based on the obtained OTFTs. Compared to OTFT without interfacial layer, the field-effect mobility (μ) was enhanced from 0.018 cm²/Vs to 0.15 cm²/Vs by incorporating with MoO_x interfacial layer. Moreover, when exposed to 30 ppm NO₂, the saturation current and μ of OTFT with MoO_x interfacial layer increase 22.7% and 26.7%, respectively, while in original OTFT, the values are only 3.0% and 3.7%, respectively. The mechanism of performance improvement of OTFT sensor was systematically studied by focusing on the interface of source/drain electrode and organic semiconductor. The reduced contact resistance leads to higher μ, meanwhile, pentacene morphology modulation on MoO_x contributes to better diffusion of NO₂ molecules. As a result, higher μ and more diffused gas molecules enhance the gas sensing property of the transistor.