模压成形制备高电阻率炭材料

利用浸渍炉内残留或废弃的呋喃树脂,采用温压成形技术制备高电阻率炭材料。研究了粘结剂质量分数对材料性能(密度、电阻率、石墨化度)的影响,用扫描电镜观察了材料断口的微观形貌。结果表明,采用30%的酚醛树脂做粘结剂时,材料的综合性能最优,其平均密度为1.47g.cm-3,电阻率为224μΩ.m;制品中加入粘结剂时,石墨化度明显增加,为37.5%;试样断口扫描电镜照片表明粘结剂的质量分数为30%时,材料致密,孔隙细小且分布均匀,没有明显裂纹。     

提高变压器抗短路强度的措施

变压器对抗短路强度的要求是很高的。文中介绍了变压器短路时的电动力的作用情况，结合单位实际情况介绍了提高变压器抗短路能力的措施。     

青藏铁路110kV输变电工程五道梁和沱沱河变电所所址的土壤结构模型分析

为青藏铁路供电的110kV沱沱河和五道梁变电站地处高寒永冻地区,如何分析得到变电站的土壤模型是设计接地系统的前提.根据土壤电阻率的现场实测结果采用土壤分层的反演理论分析得到了沱沱河和五道梁两变电站的土壤模型;通过统计分析两变电站地温的季节变化来确定冬季地表土壤的电阻率,以反映季节因素对土壤模型的影响;最后通过现场接地装置接地电阻的实测结果验证了土壤分层模型的合理性.不同季节土壤模型的建立为沱沱河和五道梁两变电站接地系统的设计奠定了基础.     

探地雷达探测隐伏岩溶的可行性与实例分析

介绍了探地雷达在地下介质中的传播原理,对影响探测工作的关键参数进行了分析;论证了探地雷达探测隐伏岩溶的可行性,结合现场实例总结出不同形态的隐伏岩溶在雷达剖面图上的波形特征,讨论了现场探测工作中应注意的一些问题.实践证明,应用探地雷达探测隐伏岩溶是一种快速、高效、经济、可靠的物探方法.     

Forming regularity and relation between composition and property of B2O3-BaO-ZnO glass

B2O3-BaO-ZnO glass was prepared by using conventional melt quenching technology. The forming regularity and the relationship between the composition and the property of B2O3-BaO-ZnO glass were investigated. The results show that the composition range for forming B2O3-BaO-ZnO glass is very wide, but the content of B2O3 has a limit within mole fraction of 25%-75%. When the content of B2O3 is over the limit, the melt will be divided into two phases with different compositions and structures, whereas too low content of B2O3 will result in the crystallization of the melt during the cooling process. The thermal expansion coefficient, the transition temperature and the resistivity of the glass at room temperature are (5-10)×10-6 ℃-1, 480-620 ℃ and (1.5-3.0)×1010 Ω·m, respectively.     

透明导电薄膜在不同衬底上的性能对比研究

为了对比研究不同透明衬底上ZnO:Al(ZAO)薄膜的性能,采用直流反应溅射法制备薄膜,并对其作EDS、XRD和电学测试分析.结果表明:所制备的ZAO薄膜具有典型的ZnO晶体结构;沉积在玻璃基片上的ZAO薄膜,Al,O含量高于沉积在透明聚酯塑料基片上的,而Zn的含量则相反;在两种衬底上获得的ZAO薄膜电阻率分别为4.5×10-4Ω*cm和9.73×10-4Ω*cm,可见光透射率分别达到87.7%和81.5%.由此可见:用直流反应磁控溅射法在不同衬底上都能获得可见光透射率达到80%以上的ZAO薄膜;相比而言,在玻璃衬底上获得的ZAO薄膜电阻率低,而在透明聚酯塑料上沉积的ZAO薄膜透射性好.     

桥式起重机的电气改造

本文通过16t桥式起重机的电气改造,介绍了工厂运行多年、故障率高的桥式起重机的改造思路和方法。     

EH4电磁成像系统的数据处理过程研究

简要介绍了EH4电磁成像系统的原理、特点。着重阐述了EH4数据处理步骤、方法和过程,并结合在菲律宾GUDALAC等锰矿实际采集的数据进行了详细说明,得出了地形修正、数据插值是可行的结论。     

Characterization of FeS2-pyrite thin films synthesized by sulphuration of amorphous iron oxide films pre-deposited by spray pyrolysis

FeS₂-thin films with good crystallinity were synthesized by a simple method which consists of sulphuration, under vacuum, of amorphous iron oxide thin films pre-deposited by spray pyrolysis of FeCl₃·6H₂O (0.03 M)-based aqueous solution onto glass substrates heated at 350 °C. At optimum sulphuration temperature (450 °C) and duration (6 h), black green layers having granular structure and high absorption coefficient (5.10⁴ cm⁻¹) were obtained. The study of the electrical properties of the as-prepared films vs. the temperature variations showed three temperature domain dependence of the conductivity behaviour. The first one corresponds to the high temperature range (330 K–550 K) for which an Arrhenius plot type was obtained. The activation energy value was estimated at about 61.47 meV. The second domain corresponding to the intermediate temperature range (80 K–330 K) showed a variable activation energy between the grain boundaries. The barrier height, q¯, was estimated to 27±0.5 meV, and the standard deviation, qσ, was evaluated at about 14±0.5 meV. We found that at lower temperatures (20 K–80 K), the conductivity is governed by two conduction types. The density of localised states, was about 2.45×10²⁰ eV⁻¹ cm⁻³.     

Optical and electrical properties of ZrSe3 single crystals grown by chemical vapour transport technique

Single crystals of the lamellar compound, ZrSe₃, were grown by chemical vapour transport technique using iodine as a transporting agent. The grown crystals were characterized with the help of energy dispersive analysis by X-ray (EDAX), which gave confirmation about the stoichiometry. The optical band gap measurement of as grown crystals was carried out with the help of optical absorption spectra in the range 700–1450 nm. The indirect as well as direct band gap of ZrSe₃ were found to be 1.1 eV and 1.47 eV, respectively. The resistivity of the as grown crystals was measured using van der Pauw method. The Hall parameters of the grown crystals were determined at room temperature from Hall effect measurements. Electrical resistivity measurements were performed on this crystal in the temperature range 303–423 K. The crystals were found to exhibit semiconducting nature in this range. The activation energy and anisotropy measurements were carried out for this crystal. Pressure dependence of electrical resistance was studied using Bridgman opposed anvils set up up to 8 GPa. The semiconducting nature of ZrSe₃ single crystal was inferred from the graph of resistance vs pressure. The results obtained are discussed in detail.