High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide

In the present study, we have performed electrical characterization of oxides deposited via rapid thermal chemical vapor deposition using SiH₄ and N₂O. We have investigated the effect of temperature, pressure, and SiH₄ to N₂O ratio on the electrical and material properties of as-deposited films. We have found that as-deposited oxides deposited at low temperatures, low pressures, and with a low silane to nitrous oxide ratio of ～0.5% give good material and electrical properties. The as-deposited films are stoichiometric in nature and have high deposition rates. As-deposited films had very low D_it values, high breakdown fields, and excellent subthreshold swing. The leakage currents and metal oxide semiconductor field effect transistor current drive, although lower than thermal oxides, were found to be quite acceptable. We have also investigated the thickness dependence of the films and found that as the film thickness is reduced below 50Å, the reliability improves for all oxides including the silicon-rich deposited oxides.     

The method of testing of XLPE cable insulation resistance to partial discharges and electrical treeing

The paper gives a method of model XLPE medium voltage cable insulation testing for partial discharges and electrical treeing with a point to plane test geometry. Based on this method, a comparative estimate of insulation resistance to treeing and partial discharges have been made. XLPE crosslinked by different methods (steam medium and hot nitrogen medium) and with varying contents of inorganic filler kaolin were tested. The characteristics of partial discharges were measured by means of a pulse height analyser characterized with a microscope. The data have been analysed statistically.     

Subsecond thermophysics research at the Boris Kidrich Institute Vincha

In the early eighties, at the Boris Kidrich Institute Vincha, a method for measuring specific heat and electrical resistivity of electrical conductors in the millisecond resolution range was developed for measurements from room temperature to 1900 K. Over a period of nearly 10 years, the method was applied to different materials, including pure metals, ferrous, and nickel/ chromium alloys, and to the characterization of candidate materials for thermophysical property reference standards. This paper describes the method and reviews the results obtained in specific heat and electrical resistivity studies of ferromagnetic and other materials. The paper also demonstrates capabilities of the method for describing phase transitions or anomalies in pure metals (Fe, Co, Ni) or alloys (Nichrome, austenitic stainless steel).Paper presented at the Second Workshop on Subsecond Thermophysics, September 20–21, 1990, Torino, Italy.     

Radiation tolerance of type IIa synthetic diamond detector for 14 MeV neutrons

Radiation tolerance of a type IIa synthetic diamond detector was examined from irradiation of mono-energetic 14 MeV neutrons. Measurements of I–V (current–voltage) characteristics and energy spectrum for 5.486 MeV alpha particles were performed after neutron irradiation. In the I–V characteristics measurement, enhancement of rectification was observed after neutron irradiation of up to 2.0 × 10¹² n/cm². Concurrently with the enhancement of rectification, significant decrease in signal amplitude was observed in energy spectrum measurement for alpha particles. It is considered that these changes were due to increase in the concentration of defects acting as shallow energy levels in the forbidden band. For neutron irradiation of higher than 1.6 × 10¹³ n/cm², weakening of the rectification characteristics and recovery of the signal amplitude were observed. These changes imply that deep energy levels, which were also considered to be introduced by defects, were dominant and weakened the effects of the shallow energy levels. Increase in the concentration of the deep trapping levels resulted in gradual decrease of the signal amplitude and degradation in the energy resolution. The peak for the alpha particles was obtained up to 5.5 × 10¹³ n/cm².     

Synthesis of nanophase tungsten carbide by electrical discharge machining

Tungsten carbide nanopowders were synthesized successfully by electric discharge machining followed by annealing under a nitrogen atmosphere. The tungsten workpieces were initially melted and evaporated on the working surface during the electric discharge machining process, and then the tungsten powders were reacted with the carbon electrode and the working medium of kerosene to form the nanocrystalline WC_1−x powders. The powders produced were characterized by XRD, SEM, and TEM. When annealing the powders under an N₂ atmosphere, the cubic phases of WC_1−x gradually changed to hexagonal W₂C and then were transformed fully to nanocrystalline hexagonal WC at 1200 °C, with the nanocrystalline tungsten carbide encapsulated in a carbon shell. On the other hand, under an H₂ atmosphere, the WC_1−x phase changed via a W₂C phase to reduced powders of pure tungsten at 1000 °C or were reduced directly from WC_1−x to elemental W.     

用射频化学气相沉积法制备p型微晶金刚石薄膜

利用射频化学气相沉积法，通过硼的掺杂，在石英玻璃衬底上生长出Ｐ型微晶金刚石薄膜，范德堡法的测试表明，我们得到的薄膜最小电阻率为４×１０－２Ω．ｃｍ，最大空穴迁移率为５０ｃｍ／Ｖ．ｓ；从电阻率与温度关系近似计算出杂质激活能     

Three-Dimensional Solution and Experimental Confirmation for the Electric Resistivity Testing of Surface-Breaking Defects in Green-State Powder Metallurgy Compacts

This paper investigates electrostatic voltage distributions around a surface-breaking flaw due to an injected current of known strength. The direct 3-D solution of the voltage behavior over the flawed surface is obtained numerically by the use of a boundary integral formulation. A novel iteration method is applied to solve the resulting electrostatic integral equation for the unknown surface voltage distribution. In addition to investigating the sensitivity of different flaw sizes to the observed surface voltage distribution, important issues such as suitable probe spacing and current flow orientation are studied. For sufficiently small surface-breaking flaws, a simple image source model is developed to evaluate the voltage response of hairline cracks. The model is tested by comparing it with the developed numerical solution. Experiments aimed at establishing the validity of the modeling approach show remarkable agreement with the theoretical model.     

Thermophysical Properties of W–Re Alloys Above the Melting Region

In earlier experiments we have studied pure elements with a fast pulse heating technique to obtain thermophysical properties of the liquid state. We report here results for thermophysical properties such as specific heat and dependences among enthalpy, electrical resistivity, and temperature, for four W–Re alloys (3.95, 21.03, 23.84, and 30.82 at % of Re) in a wide temperature range covering solid and liquid states. Thermal conductivity is calculated using the Wiedemann–Franz law for the liquid alloy, as.well as data for thermal diffusivity for the beginning of the liquid phase. Additionally, data for the entire temperature range studied have been analyzed in comparison with those of the constituent elements, tungsten and rhenium, since both metals have been studied previously with the same experimental technique. Such information is of interest in the field of metallurgy since W–Re alloys of low Re content in the region of mutual component solubility in the solid state are widely used as thermocouple materials for the purposes of high-temperature thermometry.     

一个低电阻率油气藏的测井评价

根据J油田大量岩芯分析资料,应用油藏流体分布理论和毛管压力计算方法,研究该油田低电阻率油气层的形成原因认为:地层水矿化度高(多数>20万ppm);微细孔隙发育,束缚水含量高;粘土矿物含量高且分布在碎屑颗粒表面等是形成低电阻率油气层的主要原因.一般常规测井评价时,对这种低电阻率油气层容易误释而丢弃.依据油气藏流体分布原理,应用毛管压力方法计算原始含油饱和度,可准确地识别出这种低电阻油气层,并可预测其产能.     

两种具有电双稳态的全有机络合物

首次发现两种在室温下即具有电双稳态的全有机（有机-有机）络合物，分别称为MCA＋TCNQ和BBDN＋TCNQ。它们可在真空中制备成薄膜，在数伏电压的作用下，从高电阻至低电阻的跃迁时间小于100ns，因此可作为一次写入的存储器材料。根据我国目前最小刻线宽度的水平，可望在1．6cm2的SiO2平面上做出64Mb的存储器。