单片机在织机送经系统中的应用

本文阐述了如何提高织机送经机构送经均匀性的问题，重点对采用单片机控制织机送经系统的实现方案进行了论述，最后对单片机控制送经系统的运行情况及推广使用作了说明。     

Quantum Computer Development with Single Ion Implantation

Spins of single donor atoms are attractive candidates for large scale quantum information processing in silicon. Formation of devices with a few qubits is crucial for validation of basic ideas and development of a scalable architecture. We describe our development of a single ion implantation technique for placement of single atoms into device structures. Collimated highly charged ion beams are aligned with a scanning probe microscope. Enhanced secondary electron emission due tohigh ion charge states (e.g., ³¹P¹³⁺, or ¹²⁶Te³³⁺)allows efficient detection of single ion impacts. Studies of electrical activation of low dose, low energy implants of ³¹P in silicon show a drastic effect of dopant segregation to the SiO₂/Si interface,while Si₃N₄/Si retards ³¹P segregation. We discuss resolution limiting factors in ion placement, and process challenges forintegration of single atom arrays with control gates and single electron transistors. PACS: 03.67.Lx, 34.50.Dy, 85.35.Gv, 73.23, 61.72, 86.40.py, 07.79.-v     

电子显微术在材料研究中的应用

列举了应用电子显微术——选区电子衍射和成像、高分辨电子成像和电子能量损失谱研究两种材料的例子。电子衍射和相关理论的计算结果表明，0．2％碳钢经923K，5．5h碳氮共渗油淬后的化合物层是ε—Fe2—3(N，C)，而不是ε—Fe2(N，C)和ε—Fe3(N，C)；经523K，2h时效后化合物层中的“灰区”析出几纳米尺度的γ′—Fe4N是化合物层硬化的原因。高分辨电子成像和电子能量损失谱揭示了高温磁控溅射41％FeCo(体积分数，下同)—Al2O3颗粒膜两步相分离的演变过程及其对巨磁电阻的影响。     

电子束蒸发制备氧化钨、氧化镍薄膜的电致变色性能

电致变色(EC)材料在外加电压作用下能可逆地改变其光学性能.其中氧化钨与氧化镍是典型的电致变色用材料.本文用电子束蒸发的方法在ITO玻璃基片上制备了此两种薄膜,研究了热处理工艺对薄膜结构与电致变色性能的影响.电致变色性能由电化学方法测试.封装的半固态智能窗器件具有很好的电致变色性能.     

低能电子投射全息的计算机模拟和数值重现研究

点源发出的低能量电子波经过样品的散射后,带有物体原子结构信息的散射波(物波)和未被散射的电子波(参考波)在收集平面上相互干涉形成的电子全息图即为低能电子投射全息图.本文在合理的物理模型下,以石墨的晶体结构为试样,通过计算机模拟的方法,首次对低能电子投射全息进行了研究,讨论了一些关键参数对晶体结构电子全息的重现像和分辨率的影响,并且实现了晶体结构三维数值重现,讨论了三维重现的效果.     

Etching characteristics and mechanism of Pb(Zr,Ti)O3 thin films in CF4/Ar inductively coupled plasma

The effect of the CF₄/Ar mixing ratio on the etching behaviour and mechanisms for Pb(Zr,Ti)O₃ (PZT) thin films in an inductively coupled plasma was carried out. It was found that an increase of Ar mixing ratio causes non-monotonic behaviour of the PZT etch rate, which reaches a maximum of 2.38 nm/s at 80% Ar. Investigating the plasma parameters, we found a weak sensitivity of both electron temperature and electron density to the change of CF₄/Ar mixing ratio. A combination of zero-dimensional plasma model with the model of surface kinetics shows the possibility of a non-monotonic etch rate behaviour due to the concurrence of physical and chemical pathways in the ion-assisted chemical reaction.     

Structural-mechanical relationship of epoxy compatibilized polyamide 6/polycarbonate blends

Polyamide 6 (PA6)/polycarbonate (PC) blends compatibilized with solid epoxy resin (bisphenol type-A) were prepared by extrusion followed by injection molding. The effects of epoxy resin on the microstructure, tensile, impact and compatibility of the PA6/PC blends were investigated. The results showed that both the tensile modulus and elongation at break of PA6/PC blends were inferior as compared to their parent polymers. This resulted from incompatibility between the PA6 and PC phases. SEM observation revealed that the introduction of 0.5 part per hundred (phr) epoxy resin into the PA6/PC75/25 blend yields a finer dispersion of PC phase in PA6 matrix. The boundaries between the PC domains and PA6 matrix became obscure with the incorporation of 1 phr epoxy resin. Such an improvement in compatibility was suggested to be resulted from the formation of in situ epoxy bridged PA6-PC block copolymer in the blend during compounding. Consequently, the tensile modulus, yield strength and impact strength of the PA6/PC 75/25 blend improved considerably with increasing epoxy content.     

High aspect ratio CdS nanowires synthesized in microemulsion system

CdS nanowires with typical length more than 8 μm and width of 30 nm on average have been successfully synthesized through Cd(NO₃)₂ reacting with CS₂ and ethylenediamine in microemulsion system of sodium dodecylbenzene sulfonate (SBDS). The microstructures of the as-synthesized CdS nanowires were characterized using XRD, transmission electron microscopy (TEM) and HRTEM. The possible formation mechanism was discussed. The morphologies of CdS sample strongly depend on the concentration of surfactant in solutions.     

Interfacial electron density profile in Nb/Si bilayer films: an X-ray reflectivity study

This article describes a systematic study of the nature of interfaces involved in a Nb layer deposited on Si (Nb-on-Si) and Si layer deposited on Nb (Si-on-Nb) bilayer films by using a UHV electron beam evaporation technique, having individual layer thickness of 35 and 100 Å each. By using Grazing angle X-ray reflectivity and adopting a proper modelling technique the electron density profile (EDP) as a function of depth has been determined in the samples. EDP determined in as-deposited 35 Å Nb and 35 Å Si bilayer films show that the width of Si-on-Nb and Nb-on-Si interfaces are 20 Å and 40 Å, respectively. The difference observed in the width of two interfaces is attributed to the different growth morphology of 35 Å Nb and 35 Å Si single-layer films as revealed by atomic force microscopy (AFM) investigations. EDP determined from measured XRR data for 100 Å Nb and 100 Å Si deposited bilayer film shows that the width of Si-on-Nb interface is 10 Å. This observed width is smaller than the similar interface in the case of samples having an individual layer thickness of 35 Å. The corresponding interface width of Nb-on-Si is found to be 45 Å and marginally more than the similar interface in the case of the 35 Å Nb/35 Å Si bilayer samples. AFM studies carried out on 100 Å Nb and Si layers deposited separately on float glass substrate indicate similar gross as well as subtle morphological features and cannot be attributed to the observed asymmetry in this case. The observed asymmetry in EDP of two interfaces in this case is due to the enhanced diffusion of Si into the formed metal layer relative to the diffusion into the already deposited metal layer.     

物流GPS监控管理系统的设计和应用

物流GPS监控管理系统是一个基于GPS车载设备/监控中心/互联网的移动目标跟踪服务平台,以地理信息系统(GIS)为基础,借助互联网进行信息汇总,集监控、定位、报警及调度于一体的信息管理系统,它的应用能有效地提升物流企业的现代化管理水平。本文针对江铜集团永信运输有限公司物流GPS监控管理系统的特点、设计开发和应用作了详细的介绍。