LD端面泵浦的1.57μm内腔式OPO

1.57 μm波长激光为人眼安全波长激光。将KTP晶体置于一个由LD端面泵浦、声光调Q的Nd:YVO4晶体双凹谐振腔内,利用KTP表面镀膜建立了内腔式OPO,实现了重复率在5～40 kHz范围内1.57 μm脉冲激光的稳定输出。实验结果表明,激光的阈值将随声光调Q器重复率的增加而升高,重复率为5 kHz时得到最低阈值1.52 W。重复率为15 kHz、泵浦功率为3.7 W时,输出光平均功率为305 mW,脉冲宽度50 ns,峰值功率400 W。     

STC15系列单片机与LC0811型液晶屏软硬件接口的设计

为了实现对单行8个英文字符或数字的信息显示需求,提出了一种基于STC15F2K60S2单片机的LC0811-LY液晶显示屏的硬件接口设计,并编程实现信息显示功能.该系统的软件部分采用keil4开发,使用C语言进行编写.实际应用表明,该系统软硬件设计稳定可靠、操作简便,达到了设计要求.     

WRC-15前俄罗斯L频段航空移动台站申报引发的思考

本文通过分析WRC-15前夕俄罗斯向国际电联申报L频段航空移动台站台站的情况,详细论述了其对我国此频段内其他各业务的影响,说明了我国在L频段国际台站申报的重要意义。     

Interfacial reaction between 42Sn-58Bi solder and electroless Ni-P/immersion Au under bump metallurgy during aging

The interfacial reaction between 42Sn-58Bi solder (in wt.% unless specified otherwise) and electroless Ni-P/immersion Au was investigated before and after thermal aging, with a focus on the formation and growth of an intermetallic compound layer, consumption of under bump metallurgy (UBM), and bump shear strength. The immersion Au layer with thicknesses of 0 μm (bare Ni), 0.1 μm, and 1 μm was plated on a 5-μm-thick layer of electroless Ni-P (with 14–15 at.% P). The 42Sn-58Bi solder balls were then fabricated on three different UBM structures by using screen printing and pre-reflow. A Ni₃Sn₄ layer formed at the joint interface after the pre-reflow for all three UBM structures. On aging at 125°C, a quaternary phase, identified as Sn₇₇Ni₁₅Bi₆Au₂, was observed above the Ni₃Sn₄ layer in the UBM structures that contain Au. The thick Sn₇₇Ni₁₅Bi₆Au₂ layer degraded the integrity of the solder joint, and the shear strength of the solder bump was about 40% less than the nonaged joints.     

Antiviral Warrior-APOBEC3G

This paper is to further understand how APOBEC3G can defend the retroviruses and to find new approaches to AIDs (acquired immure deficiency syndrome).The viral infectivity factor (Vif) induces rapid degradation of APOBEC3G by ubiquitination, which is a proteosome-dependent pathway. Precisely speaking, only in the virus-producing cell Vif expression is necessary; in its absence, infection of a subsequent target cell terminates at a postentry step through the action of the human APOBEC3G antiviral mechanism. Vif protein has two domains:one binds to APOBEC3G and the other regulates the degradation of APOBEC3G by a conserved sequence, SLQ (Y/F) LA motif. Recently, the research on Vif has also revealed APOBEC3G is a novel component of innate immune system. In fact, APOBEC3G not only acts in DNA editing to block the replication of retroviruses such as HIV-1, but also is able to defend a wide spectrum of distantly related retroviruses and interferes with HBV through a different mechanism from HIV.     

Sr_(1-x)Ba_xBi_4Ti_4O_(15)铁电陶瓷性能研究

采用传统固相反应法制备了Sr1–xBaxBi4Ti4O15(x=0～1.0)铁电陶瓷,研究了Ba取代量对其烧结性能和介电性能的影响。结果表明,适量Ba取代促使陶瓷样品烧结温度由1240℃降至1130℃左右,tanδ降至20×10–4,体积电阻率ρv提高一个数量级,同时居里峰显著展宽,居里温度tC下降。当x=0.7时,在1130℃烧结6h获得的陶瓷样品综合介电性能较好:εr≈150,tanδ=53×10–4,ρv=1.7×109Ω·m,tC≈430℃。     

Photonic theory of noise

The paper proposes that 1/f noise in materials and devices under non-equilibrium conditions is of electromagnetic origin rather than being related to charge carriers. For samples represented by simple resistors the analysis shows that the noise is due to the discrete nature of photons constituting the impinging electromagnetic flux from the source feeding the resistor. The paper presents detailed analysis of the external and internal electromagnetic fields of the resistor environment, with appropriate interpretation in terms of discrete photons. From quantum theory photons are known to retain their energy under interactions in linear environments. This property implies a departure from macroscopic electromagnetics in that photons cannot be partially transmitted and partially reflected, a phenomenon requiring appropriate modifications of boundary conditions at the resistor surface. These special demands call for inclusion of a supplementary internal resistor mode, serving as a lossless idler which is active only for matching purposes. At the resistor terminals the impinging photons give rise to excitation of RF current and voltage noise with an exact 1/f frequency distribution, which is in agreement with all available experimental measurements. The paper presents detailed formulae for noise spectral densities under general drive conditions from DC and RF sources of arbitrary internal resistance. The presented theoretical noise formulae have the same form as earlier empirical formulae for 1/f noise. With an RF source at frequency f₀ the analysis predicts noise with 1/|f-f₀| frequency distribution, which is compatible with available experimental observations.     

单片机教学系统驱动芯片测试装置的设计

针对DTHS-A单片机实验平台的日常维护需要设计了该测试装置,该装置能够快速的检测实验电路中驱动芯片是否正常,与传统方法相比,节约了维护的时间,提高了检测效率.该装置以STC15F2K61S2为控制核心,通过按键与拨码开关来选择对应芯片,通过液晶显示与LED指示芯片是否正常,同时具有过流保护功能.     

激光烧结Sr_(1.86)Ca_(0.14)NaNb_5O_(15)无Pb压电陶瓷

采用激光烧结技术,制备出相对密度为97.5%的Sr1.86Ca0.14NaNb5O15(SCNN)无Pb压电陶瓷。最佳烧结条件为:激光烧结功率密度为1.99W/mm2;激光烧结时间为60s;激光功率密度升降速率为0.50W/mm2.min。与传统炉烧SCNN陶瓷相比,激光烧结SCNN陶瓷室温下1MHz的介电常数κ从1312增长到1419,机电耦合系数k33从17%增长到了27%,压电常数d33从60pC/N提高到93pC/N。扫描电镜(SEM)观测发现:与传统炉烧陶瓷相比,激光烧结SCNN陶瓷的晶粒尺寸较小,气孔较少,Na挥发较少;陶瓷片的X射线衍射(XRD)分析表明,激光烧结陶瓷的晶粒具有一定程度的取向生长。     

KSr_2Nb_5O_(15)基微晶粉体及其陶瓷的制备研究

提出一种新的陶瓷掺杂稀有金属元素的制备方法,即首先合成掺杂稀有金属元素的微晶粉体,然后采用该粉体为原料完成陶瓷的制备。该文采用此法研究了Bi2O3含量对KSr2Nb5O15微晶形貌和陶瓷微观结构的影响,通过实验结果分析证实,Bi 3+进入KSr2Nb5O15微晶晶格中,合成了掺Bi的KSr2Nb5O15微晶粉体;Bi 3+的掺杂减弱KSr2Nb5O15陶瓷晶粒晶界能的各向异性,成功抑制了晶粒的异常生长。