φ60mm掺碲GaP单晶的研制

用高压液封直拉法制备大直径GaP单晶重要的是控制拉制参数,如埚位、氧化硼厚度、热场、晶体坩埚直径比等.实验采用浮舟技术控制晶体直径,调整和控制参数使得晶体固液界面在拉制过程中始终凸向熔体,这对获得单晶非常重要.分析了晶体中电阻率、载流子浓度分布及位错分布.采用X射线双晶衍射对晶体质量进行了测试分析.     

位相调制三倍频激光束聚焦特性的衍射模型

基于三次谐波转换过程中位相扰动的传输变换 ,理论上研究了非线性晶体表面周期性纹波对三倍频激光束聚焦特性的影响 ,建立了多级衍射模型。该理论模型能解析地分析多级衍射峰的强度分布及角度分布 ,可为高功率激光驱动器三倍频器的设计提供理论依据     

光栅对压缩器在刻线不平行时的色散研究

针对光栅对压缩器刻线平行性失调会对压缩器色散特性造成严重影响这一问题,对刻线不平行的光栅对压缩器的衍射特性进行了分析,推导出了脉冲光束通过光栅对的光程。数值计算了2阶、3阶和4阶色散量,以及与光栅对严格平行相比的色散差。计算了输出脉冲的垂直谱位移,并将其作为刻线夹角的函数进行了分析。结果表明,存在刻线失调时,低刻线密度的光栅具有更好的优越性。     

低串扰平顶型刻蚀衍射光栅解复用器的设计

介绍了一种低串扰、频谱响应平坦化的刻蚀衍射光栅(EDG)解复用器的机理与设计方法,设计带有预整形输入的优化的多模干涉(MMI)结构.该设计采用了广角束传播方法(BPM)、基耳霍夫衍射理论以及模式传输理论等方法.给出一个优化的预整形渐变波导结构,以获得更陡的输出场边缘,使用MMI结构,获得了平坦的频谱响应,设计结构还获得了相对较低的色散值.     

电点火头药剂贮存失效的组分分析

采用X-射线衍射实验,分析了电点火头在非密封加速寿命试验后各个时间点上药剂组分的变化情况。加速寿命试验温度为(60±2)℃、相对湿度为95％±3％。结果表明:该点火头药剂受潮易变质发生反应,加速寿命试验1.5天后,药剂成分基本没有发生变化;加速寿命试验3天后,Pb(SCN)2的衍射峰强度有所减弱,但没有发现新的物质;加速寿命试验6天后,药剂成分完全发生变化,变成其它新的物质;加速寿命试验9天后,点火头药剂成分除了具有与6天相同的一些物质特征峰外,还发现了PbSO4的特征峰,对药剂中的绿色生成物进行分析,确定该物质为Cr2O3。     

拉曼-纳斯衍射声光Q开关的实验研究

实验研究了拉曼-纳斯(R-N)衍射的声光相瓦作用长度与声波光波参数之间的关系,确定了最佳声光相互作用长度.在此基础上,分别设计以水和TeO2晶体为声光介质的R-N衍射Q开关器件,测量了器件的衍射效率、衍射角和插入损耗等参数.应用TeO2晶体开关器件调制长脉冲Nd:YAG/KTP激光器,当重复频率为10 kHz时得到了脉...     

Effect of rapid thermal annealing on pentacene-based thin-film transistors

The bottom contact pentacene-based thin-film transistor is fabricated, and it is treated by rapid thermal annealing (RTA) with the annealed temperature up to 240 °C for 2 min in the vacuum of 1.3 × 10⁻² torr. The morphology and structure for the pentacene films of OTFTs were examined by scanning electron microscopy and X-ray diffraction technique. The thin-film phase and a very small fraction of single-crystal phase were found in the as-deposited pentacene films. While the annealing temperature increases to 60 °C, the pentacene molecular ordering was significantly improved though the grain size only slightly increased. The device annealed at temperature of 120 °C has optimal electrical properties, being consistent with the experimental results of XRD. The post-annealing treatment results in the enhancement of field-effect mobility in pentacene-based thin-film transistors. The field-effect mobility increases from 0.243 cm²/V s to 0.62 cm²/V s. Besides, the threshold voltage of device shifts from −7 V to −3.88 V and the on/off current ratio increases from 4.0 × 10³ to 8.7 × 10³.     

X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures

The grazing incidence X-ray reflectivity (GIXR) technique and atomic force microscopy (AFM) were exploited to obtain an accurate evaluation of the surfaces and interfaces for metalorganic chemical vapor deposition grown Al<,x>Ga<,1-x>N/GaN superlattice structures. The X-ray diffraction results have been combined with reflectivity data to evaluate the layer thickness and Al mole fraction in the AIGaN layer. The presence of a smooth interface is responsible for the observation of intensity oscillation in GIXR, which is well correlated to step flow observation in AFM images of the surface. The structure with a low Al mole fraction (x = 0.25) and thin well width has a rather smooth surface for the R<,rms> of AFM data value is 0.45 nm.     

Combined use of three-dimensional X-ray diffraction imaging and micro-Raman spectroscopy for the non-destructive evaluation of plasma arc induced damage on silicon wafers

The practicality of plasma etching, combined with low temperature and directional process capabilities make it an integral part of the IC manufacturing process. A significant cause of damage to wafers during plasma processing is arcing damage. Plasma arcing damage results in large pits and non-uniformities on the wafer surface which can lead to wafer breakage and high yield losses.Thus a non-destructive wafer damage metrology is crucial to the understanding of wafer failure mechanisms. We report on the successful use of a combined suite of non-destructive metrology techniques to locate the arc damage sites and examine the physical processes which have occurred as a result of the damage. These consist of 3D X-ray diffraction imaging (3D-XRDI), micro-Raman spectroscopy (μRS), and scanning electron microscopy (SEM).In the case of the two examples examined in this study the plasma induced damage on the wafer surface appears as regions of damage ranging from 100 μm to 1000 μm in diameter. 3D-XRDI shows that the strain fields propagate out from the damage site in all directions, with the damage penetrating up to ? of the way through the substrate. K-means clustering and false colouring algorithms are used to highlight the regions of interest in 3D-XRDI, and to enhance the analysis process. Sectioning of the 3D images has enabled non-destructive imaging of the internal damage in the samples at any location. Micro-Raman spectroscopy results indicate the presence of both crystalline and amorphous silicon. Strain measurements at the damage site show tensile strains as high as 500 MPa in certain situations, with strain levels increasing from the surface towards the bottom of the dislocation cell structures, which can be distinguished in the synchrotron X-ray topographs. 3D-XRDI and μRS results are in close correlation, proving the potential for 3D-XRDI as non-contact, non-destructive metrology particularly suited to these problems.     

一种电子陶瓷的分析方法

对五元系统BaO PbO Nd2 O3 Bi2 O3 TiO2 进行X 射线粉末衍射分析确定系统的主次晶相分别为BaNd2 TiO14 和Bi4Ti3 O12 。用X射线衍射峰强度计算出系统中各物相的体积百分数 ,代入李赫德涅凯对数混合定则 ,定量计算出的系统介电性能与用仪器实测的相符。结果表明对于X射线衍射强度可以定量表征系统介电性能的材料 ,可以根据所需的性能指标利用李氏定则确定系统成分配比 ,从而可以作为电子陶瓷材料设计改进的依据。