Monolithic integration of Giant Magnetoresistance (GMR) devices onto standard processed CMOS dies

Giant Magnetoresistance (GMR) based technology is nowadays the preferred option for low magnetic fields sensing in disciplines such as biotechnology or microelectronics. Their compatibility with standard CMOS processes is currently investigated as a key point for the development of novel applications, requiring compact electronic readout. In this paper, such compatibility has been experimentally studied with two particular non-dedicated CMOS standards: 0.35 μm from AMS (Austria MicroSystems) and 2.5 μm from CNM (Centre Nacional de Microelectrònica, Barcelona) as representative examples. GMR test devices have been designed and fabricated onto processed chips from both technologies. In order to evaluate so obtained devices, an extended characterization has been carried out including DC magnetic measurements and noise analysis. Moreover, a 2D-FEM (Finite Element Method) model, including the dependence of the GMR device resistance with the magnetic field, has been also developed and simulated. Its potential use as electric current sensors at the integrated circuit level has also been demonstrated.     

Economic impact modelling of smart specialization policy: Which industries should prioritization target?

In this paper we argue that it is necessary to apply economic impact models in smart specialization policy in order to come up with reliable economic impact estimations. Solutions suggested in the smart specialization (S3) literature for economic impact assessments cover the economic effects only partially. To estimate the impacts in the industrial, regional and national dimensions in their entirety the application of specifically designed economic models becomes necessary. We extended the geographic macro and regional (GMR)-Hungary policy impact model with additional features to make this model applicable for S3 economic impact estimations. In our policy simulations we illustrate how the application of this model helps policy-makers in the prioritization process.     

基于GMR传感器的Zig Bee无线车辆检测系统设计

设计了一种基于巨磁阻(GMR)传感器的Zig Bee车辆检测系统,利用高灵敏度的GMR传感器采集道路上经过车辆对地磁场的扰动信号,然后通过检测节点对采集的数据进行打包处理,并通过Zig Bee无线网络系统将数据传输给上位机。实验表明:该系统检测工作稳定可靠,且节点尺寸小,无需布线,易于安装。     

外磁场方位及磁珠位置和团聚对巨磁阻生物传感器检测的影响

实现GMR生物传感器对磁珠及其偶联的生物分子的定量检测,必须考虑磁场方位及磁珠位置和磁珠团聚对检测方法的影响。本文首先利用Comsol软件模拟了这3个因素对GMR传感器输出信号的影响,模拟结果表明,外磁场倾斜、磁珠位置偏离电阻条中心和磁珠团聚均会使信号减小,其中外磁场倾斜影响尤甚;当外磁场倾斜为0.5°时,磁珠的信号会减小80%。为了与模拟结果进行比对,制备了与模型相同的线宽为5μm的GMR生物传感器,并测量了输出信号与磁珠覆盖率的关系。测试结果显示,二者呈线性趋势,但与线性关系存在一定程度的偏离。另外,当磁珠覆盖率为23.6%时,实验测得的信号为63μV,比模拟结果的247μV偏小。实验显示这两种偏差均源于前述3个因素对GMR信号的影响。因此,用GMR传感器对磁珠进行定量检测时,为使信号大小与磁珠个数呈线性关系,应保证以下测试条件:外磁场尽可能垂直于传感器平面;测试过程中外磁场倾斜角不能变化;设法使磁珠集中于电阻条中间区域;尽量保证磁珠不团聚。     

Depth profile analysis of electrodeposited nanoscale multilayers by SNMS

As early as 10 years after the discovery of the giant magnetoresistance (GMR) the magnetic/non-magnetic multilayers found their first application in the read-out units of magnetic recording media, and the hard disk drives with GMR-based sensors since gained a dominating market share. In spite of the large number of works published on nanoscale multilayers, data on the depth profile of electrodeposited multilayer samples are very scarce. This work deals with the depth profile analysis of electrodeposited CoNiCu/Cu and Co/Cu multilayers films. Commercial Cu sheet and a Cr/Cu layer evaporated onto Si (1 1 1) surface were used as substrates with high and low roughness, respectively. The Secondary Neutral Mass Spectrometry (SNMS) depth profile analysis clearly revealed the layered structure of the samples. The resolution of the individual layers varied with the initial roughness of the substrate. The SNMS spectra showed that the oxygen incorporation into the layers is insignificant. When both Ni and Co are present in the magnetic layer, the composition of the samples is influenced by both the anomalous codeposition properties of the iron-group elements and the mass transport of the corresponding ions in the electrolyte. This observation draws the attention to the possible inhomogeneity of the magnetic layers in electrodeposited samples.