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151.
该文介绍了一种高电子迁移率晶体管(HEMT)的小信号参数提取及其仿真软件的研制。首先,通过一系列公式推导并提出器件的模型,确定外部参数和内部参数。其次,介绍多偏置点优化算法,并且通过实验证明这种方法的优越性。最后,介绍软件界面设计。 相似文献
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为提高全桥LLC谐振变换器交错并联(FBLLC-SP)系统的效率,且使其理论损耗与实际运行损耗更贴近,对比Cascode型GaN HEMT向系统引入单体增强型GaN HEMT,并将其寄生参数引入到损耗模型中,建立了一种适用于单移相(SPS)开环控制和三移相(TPS)双闭环控制的FBLLC-SP系统精准损耗模型;给出最佳... 相似文献
154.
N. Saysset N. Labat A. Touboul Y. Danto J. M. Dumas 《Quality and Reliability Engineering International》1996,12(4):309-315
This paper describes how in order to evaluate and compare the quality, in terms of trapping mechanisms, of conventional and pseudomorphic HEMTs (S-HEMTs and PM-HEMTs, respectively), isothermal drain current transients and G-R noise analysis have been investigated. The influence of HEMT epitaxial structures, growth techniques (MBE or MOCVD) and surface treatments on electrical performances are then discussed. Finally, the experimental data demonstrates the complementarity of these two techniques. 相似文献
155.
The present work explores the features of gate material engineered (GME) AlGaN/GaN high electron mobility transistor (HEMT) for enhanced carrier transport efficiency (CTE) and suppressed short channel effects (SCEs) using 2-D sub-threshold analysis and device simulation. The model accurately predicts the channel potential, electric field and sub-threshold current for the conventional and GME HEMT, taking into account the effect of work function difference of the two metal gates. This is verified by comparing the model results with the ATLAS simulation results. Further, simulation study has been extended to reflect the wide range of benefits exhibited by GME HEMT for its on-state and analog performance. The simulation results demonstrate that the GME HEMT exhibits much higher on current, lower conductance and higher transconductance as compared to the conventional HEMT due to improved CTE and reduced SCEs. This in turn has a direct bearing on the device figure of merits (FOMs) such as intrinsic gain, device efficiency and early voltage. Tuning of GME HEMT in terms of the relative lengths of the two metal gates, their work function difference and barrier layer thickness has further been carried out to enhance the drive current, transconductance and the device FOMs illustrating the superior performance of GME HEMT for future high-performance high-speed switching, digital and analog applications. 相似文献
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N. Takahashi M. Shiota Y. Zhu M. Shimizu D. Hirata Y. Sakamoto T. Sugino J. Shirafujf 《Journal of Electronic Materials》1996,25(5):633-636
A drastic decrease in the sheet carrier concentration of modulation-doped Al0.48In0.52As/Ga0.47In0.53As/InP heterostructures has been observed after O2 plasma treatment followed by thermal treatment up to 350°C. The decrease in sheet carrier concentration, which is speculated
to be caused by both plasma damage and impurities penetrating from the surface of the epilayer, can be suppressed substantially
by using PH3 plasma treatment prior to the O2 plasma and thermal treatments. 相似文献
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