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41.
The light extraction efficiency (LEE) of GaN-based light-emitting diodes (LEDs) was limited by intense total internal reflection and the photothermal effect. In order to solve this problem, a method to synergistically control the LEE of GaN-based LEDs by combining the complex-period photonic crystals (PhCs) with M (M = Al, In) material doping is proposed. The forbidden band width of two-dimensional (2D) PhC array, three-dimensional (3D) LED model, M doping, and electromagnetic field distribution are investigated respectively. By doping the M, the LED emission wavelength range is regulated to achieve the dual-band emission. Furthermore, a triangular complex-period photonic structure is introduced to establish stacked or etched PhCs models. By combining the plane wave expansion and finite difference time domain algorithm, the structural parameters of PhCs and M concentration dependent LEE are investigated, and the electromagnetic field distribution is explored also. The results show that the optimal LEEs can be achieved are 19.08% and 13.96% for blue light and ultraviolet, respectively, which are larger than that of traditional flat-panel LED (4%). This work provides theoretical results and technical support for the design of LEDs with high luminous efficiency. 相似文献
42.
FU XingXing ZHANG Bei KANG XiangNing XU Jun XIONG Chang & ZHANG GuoYi School of Physics State Key Laboratory for Artificial Microstructures Mesoscopic Physics Peking University Beijing China 《中国科学:信息科学(英文版)》2011,(1)
We have fabricated a series of square-lattice hole photonic crystal (2PhC) arrays simultaneously at the un-current injection region on a special sample of GaN based light emitting diode (LED) by using focus ion beam milling (FIBM). The lattice constants of the 2PhC arrays vary from 230 to 1500 nm,while the 2PhC arrays have a constant area of about 9 μm×18 μm and a fixed depth of 150±10 nm which approaches but does not penetrate the active layer. Microscopic electroluminescence images and spectral measuremen... 相似文献
43.
44.
We studied silver barrier ohmic (Ni/AuGe/Ag/Au) contacts to the GaAs based HEMT structures and observed strong dependence
of the cleaning procedures on the ohmic con-tact resistance (Rc), its stability and reliability. The chemical profiles of the metal con-tacts before and after alloying were measured by
SIMS. Samples cleaned with the com-bined plasma O2 and NH4OH process exhibited excellent results:R
c ∼ 0.1–0.12 ohm-mm when alloyed in the temperature range of 440–540° C and remained stable when subjected to a 200° C and
600mA/mm stress condition for 1000 hr. 相似文献
45.
Zhang Haiying Liu Xunchun Yin Junjian Chen Liqiang Wang Runmei Niu Jiebin and Liu Ming 《半导体学报》2005,26(6):1126-1128
Millimeterwave transistor technology is very important for MMIC design and fabrication.An InP HEMT with sawtoothed source and drain is described.The pattern distortion due to the proximity effect of lithography is avoided.High yield InP HEMT with good DC and RF performances is obtained.The device transconductance is 1050mS/mm,threshold voltage is -1.0V,and current gain cut off frequency is 120GHz. 相似文献
46.
47.
M. Gassoumi M.M. Ben SalemS. Saadaoui B. GrimbertJ. Fontaine C. gaquiereH. Maaref 《Microelectronic Engineering》2011,88(4):370-372
In AlGaN/GaN heterostructure field-effect transistors, the surface defects and dislocations may serve as trapping centers and affect the device performance via leakage current. In this paper we report results of our investigation of the trapping characteristics of Al0.25Ga0.75N/GaN HEMT using the Conductance Deep Level Transient Spectroscopy (CDLTS). Two deep level electronic defects were observed labeled E1 and HL1, with activation energies Ea1 = 1.36 eV and Ea2 = 0.63 eV. The hole-trap HL1 is characterized for the first time in our studies. We identified the characteristics of the traps at the AlGaN/GaN interface adjoining the channel and the surface along the ungated region between the gate and the drain, as well as the effects of the surface traps. 相似文献
48.
A. Fontserè A. Pérez-TomásM. Placidi P. Fernández-MartínezN. Baron S. ChenotY. Cordier J.C. MorenoP.M. Gammon M.R. Jennings 《Microelectronic Engineering》2011,88(10):3140-3144
In this paper two types of Al/Ti-based Ohmic contacts to Gallium Nitride (GaN) based devices are presented; ImplantedN+GaN (like the ones found in the Source/Drain of GaN Metal Oxide Semiconductor Field Effect Transistors-MOSFET) and heterojunction (HJ) AlGaN/GaN contacts (Source/Drain of High Electron Mobility Transistors-HEMT). Sheet resistance (Rsh) and contact resistance (Rc) have been investigated in the temperature (T) range of 25-250 °C. It was found that the Rsh (850/700 Ω□) (25/250 °C) and Rc (2.2/0.7 Ωmm) decrease with T for ImplantedN+GaN contact and Rsh (400/850 Ω□) and Rc (0.2/0.4 Ωmm) (weakly for Rc) increase with T for HJAlGaN/GaN contact. Numerical computation based models are used to determine the theoretical Rsh and Rc behavior with T and to fit the experimental values. 相似文献
49.
本文报道了fmax为200GHz的基于蓝宝石衬底的AlGaN/GaN 高电子迁移率晶体管(HEMT)。外延材料结构采用了InGaN背势垒层来减小短沟道效应,器件采用了凹栅槽和T型栅结合的工艺,实现了Ka波段AlGaN/GaN HEMT。器件饱和电流达到1.1A/mm,跨导为421mS/mm,截止频率(fT)为30GHz,最大振荡频率(fmax)为105GHz。采用了湿法腐蚀工艺将器件的Si3N4钝化层去除后,器件的Cgs和Cgd减小,器件截止频率提高到50GHz,最大振荡频率提高到200GHz。 相似文献
50.
H. Sasaki DG K. Yajima N. Yoshida T. Ishida R. Hattori T. Sonoda O. Ishihara S. Takamiya R. Konishi K. Ando 《Journal of Electronic Materials》1996,25(5):559-563
We have investigated the degradation mechanism of Al0.48In0.52As/In0.53Ga0.47As/ InP high electron mobility transistors (HEMTs) using WSi ohmic electrodes. Cross-sectional transmission electron microscopy
(TEM) observation and en-ergy dispersive x-ray (EDX) analysis reveal impurities diffusion of gate electrode (titanium: Ti)
and fluorine (F) in the AlInAs layer after a high temperature (Ta = 170°C operating life test for 500 h. The decrease of drain current (Ids) during life test shows linear dependence on square root of aging time. It suggests that the degradation is controlled by
a diffusion mechanism. Hence, the estimated degradation mechanism of this device is related with decrease of carrier concentration
in the epitaxial layer by these diffused impurities. On the other hand, TEM and EDX show no degradation of WSi/InGaAs interface
after aging. Therefore, the WSi electrode for this type of HEMT demonstrates excellent high stability under the accelerated
operating life test. 相似文献