接近和低于0.1μm的MOS硅集成电路技术

本文主要述评了接近和低于 0 .1 μm的 MOS硅集成电路技术面临的挑战。重点论述了晶体管结构、阈值电压调整、电路互连及光刻技术等热点问题     

沟道热载流子导致的 PDSOI NMOSFET's击穿特性

对热载流子导致的 SIMOX衬底上的部分耗尽 SOI NMOSFET's的栅氧化层击穿进行了系统研究 .对三种典型的热载流子应力条件造成的器件退化进行实验 .根据实验结果 ,研究了沟道热载流子对于 SOI NMOSFET's前沟特性的影响 .提出了预见器件寿命的幂函数关系 ,该关系式可以进行外推 .实验结果表明 ,NMOSFET's的退化是由热空穴从漏端注入氧化层 ,且在靠近漏端被俘获造成的 ,尽管电子的俘获可以加速 NMOSFET's的击穿 .一个 Si原子附近的两个 Si— O键同时断裂 ,导致栅氧化层的破坏性击穿 .提出了沟道热载流子导致氧化层击穿的新物理机制     

P-smart—a virtual system for clothing thermal functional design

This paper presents a virtual CAD system developed for clothing thermal functional design and simulation. It allows designers and engineers in virtual space to design and preview the thermal functional performance of clothing and gives feedback to improve the design iteratively. The system provides designers with an effective tool for designing and engineering clothing to achieve superior thermal functional performance.     

Direct evaluation of accurate coefficients of the linear elastic crack tip asymptotic field

An improvement to the extended finite element method (XFEM) and generalised finite element method (GFEM) is introduced. It enriches the finite element approximation of the crack tip node as well as its surrounding nodes with not only the first term but also the higher order terms of the linear elastic crack tip asymptotic field using a partition of unity method (PUM). Numerical results show that together with a reduced quadrature rule to the enriched elements, this approach predicts accurate stress intensity factors (SIFs) directly (i.e. without extra post‐processing) after constraining the enriched nodes properly. However, it does not predict accurately the coefficients of the higher order terms. For that a hybrid crack element (HCE) is introduced which is powerful and convenient not only for directly determining the SIF but also the coefficients of higher order terms in the plane linear elastic crack tip asymptotic field. Finally, the general expressions for the coefficients of the second to fifth terms of the linear elastic crack tip asymptotic field of three‐point bend single edge notched beams (TPBs) with span to depth ratios widely used in testing are extended to very deep cracks with the use of the HCE.     

A STUDY ON HOT-CARRIER-INDUCED GATE OXIDE BREAKDOWN IN PARTIALLY DEPLETED SIMOX MOSFET''''S

The hot-carrier-induced oxide regions in the front and back interfaces are systemati-cally studied for partially depleted SOI MOSFET's. The gate oxide properties are investigated forchannel hot-carrier effects. The hot-carrier-induced device degradations are analyzed using stressexperiments with three typical hot-carrier injection, i.e., the maximum gate current, maximumsubstrate current and parasitic bipolar transistor action. Experiments show that PMOSFET's     

Halo注入角度对热载流子效应的影响及优化

通过模拟和实验研究了不同的halo注入角度的NMOSFET,研究发现halo的注入角度越大,热载流子效应的退化越严重。考虑到由于热载流子的注入造成栅氧化层损伤,使器件可靠性变差,halo注入时应该采用小的倾角注入。     

CMOS数字电路抗热载流子研究

介绍了热载流子效应与电路拓扑结构及器件参数之间的关系,并在此基础上提出了基本逻辑门的一些搞热载流子加固方法。通过可靠性模拟软件验证这些方法,为CMOS数字电路提高抗热载流子能力提供了参考。     

孔挤压强化对Inconel 718高温合金疲劳性能的影响

为了提高Inconel 718高温合金螺栓连接孔的疲劳抗力,研究了孔挤压强化对Inconel 718高温合金中心孔试样疲劳寿命的影响,并采用扫描电镜、粗糙度仪、X射线应力测量仪及金相显微镜等仪器对孔壁表面完整性进行分析,探讨了孔挤压强化机制。结果表明:1.90%挤压过盈量的中心孔试样的中值疲劳寿命是未强化试样中值疲劳寿命的1.16~4.79倍。与2.85%挤压过盈量的试样相比,1.90%挤压过盈量试样取得了更优的疲劳寿命增益效果。分析发现:经1.90%挤压过盈量的孔挤压强化后,孔壁表面完整性得到了显著改善,孔壁表面粗糙度下降了64.2%,孔边形成了较深的残余压应力场,孔边晶粒组织发生了明显的塑性变形,形成了组织强化层。表面完整性的改善对疲劳寿命的增益具有重要作用。