Effect of fullerene doping on the electrical properties of P3HT/PCBM layers

Poly (3-hexylthiophene-2, 5-diyl) (P3HT) and its blend with Phenyl-C₆₁-Butyric acid-Methyl-Ester (PCBM) and fullerene (C₆₀) thin films were prepared and their electrical properties for memory applications were studied. Due to doping, a sharp decrease in the resistance for a P3HT:PCBM:C₆₀ device was observed at around 70 °C which makes it useful for thermal switching applications. Addition of C₆₀ to P3HT:PCBM blend gave a high value for R_RESET/R_SET in thermal switching. For bias switching, threshold voltage reduces to 1.4 V from 25 V with the addition of C₆₀ to P3HT layer.     

用快速哈达玛变换加速滤波反投影算法的滤波过程

为了加速滤波反投影算法的滤波过程,提出了用快速哈达玛变换(FHT)实现线性卷积的快速算法。分析了哈达玛变换的特点和快速算法的时间复杂度,设计了用FHT计算线性卷积的矩阵表达式,并推导出了哈达玛域滤波器的增益矩阵的求解公式,分析了该方法的加速原理及其适用条件。理论分析表明,该方法比FFT线性卷积法快了一倍。仿真实验表明,该方法在不影响图像重建精度的情况下,相对于FFT线性卷积法,将滤波过程的速度提高了近一倍。     

用异步收发器HT6720设计RFID系统

HT6720是可在射频识别系统中制作电子标签的专用集成电路，工作频率为13．56MHz，属于中频识别芯片。该芯片内置96bit OPT存储器，且为只读型。由于HT6720所需要的数据载体结构简单，因此，通过HT6720可用极低的成本生产只读标签和设计射频识别系统。     

Annealing effects on the electrical properties of spin coated poly (3-hexylthiophene) (P3HT) thin films

Poly (3-hexylthiophene-2, 5-diyl) (P3HT) thin films were prepared using spin coating technique and the effect of annealing on the bias switching for memory applications were studied. Due to annealing, the threshold voltage for switching was reduced considerably. In bias switching, threshold voltage was least for the sample annealed at 100 °C. Addition of phenyl-C₆₁-butyric acid-methyl-ester (PCBM) into P3HT also reduced the threshold voltage. It was also found that the devices with gold (Au) top electrode switched at a lower threshold voltage compared to their aluminium (Al) counterparts.     

Enhancing polymer thermoelectric performance using radical dopants

Organic thermoelectric materials provide a means to reclaim, in part, potentially lost energy through a solid-state process that converts low-value thermal gradients (in the form of heat) to electricity; however, a new avenue towards improving the performance of these emerging thermoelectric materials must be brought to light before their widespread implementation becomes warranted. Here, we develop a blend of open-shell small molecules and closed-shell, conjugated polymers in order to evaluate how the chemical composition of the distinct open-shell, charge-neutral molecular dopants impacts the thermoelectric performance of a common hole-transporting (p-type) polymer semiconductor, poly(3-hexylthiophene) (P3HT). In doing so, we are able to increase the electrical conductivity of the P3HT composite both with and without affecting the oxidation state of the polymer. Specifically, the electrical conductivity of the conjugated polymer increases without changing the oxidation state of the P3HT when the preferentially-oxidized species 4-hydroxy-2,2,6,6-tetramethylpiperidin-1-oxyl (TEMPO) radical is incorporated into the hole-conducting thin film. Moreover, the inclusion of the preferentially-reduced galvinoxyl (GAV) radical also increases the electrical conductivity of the thin film; however, this small molecule dopant changes the oxidation state of the P3HT moiety. The ability to achieve the gains in the electrical conductivity of P3HT with the TEMPO radical in a manner that is independent of its oxidation state was confirmed using optical spectroscopy, cyclic voltammetry, and x-ray diffraction techniques. Importantly, this ability to enhance the electrical conductivity of P3HT in a manner that is independent of the oxidation state of the polymer provides a means to circumvent the oft-observed inverse relationship between the electrical conductivity and thermopower of the semiconducting polymer, and this combined effect allows for an ∼170-fold increase for the TEMPO-containing composites compared to a ∼70-fold increase for the GAV-containing composites. Thus, the described phenomena for charge-neutral radical dopants provides a set of critical design parameters for future polymer thermoelectric materials and composites, and it opens a new pathway towards high-performance organic thermoelectric devices.     

High throughput testing platform for organic Solar Cells

In this paper we present a high throughput testing setup for organic solar cells that is necessary for an efficient analysis of their behaviour. The setup comprises process parameter logging, automated measurement data acquisition and subsequent data management and analysis. Utilising this setup the reproducibility of solar cells and the effect of production parameter variations has been tested with a set of 360 solar cells based on the poly‐3‐hexylthiophene:1‐(3‐methoxycarbonyl)‐propyl‐1‐1‐phenyl‐(6,6)C₆₁ bulk heterojunction. Variations in power conversion efficiency between 1 and 3% were observed on varying production parameters hardly mentioned in literature. The conditions during the vacuum deposition of the aluminium cathode turned out to have a significant effect. The key solar cell parameter affecting the performance was the fill factor (FF). As such the work exemplifies the necessity for a combined approach to analyse the complex behaviour of organic solar cells. The developed high throughput testing setup provides a basis for an efficient testing of production parameter variations and materials and additionally opens the door for statistical analysis. Copyright © 2008 John Wiley & Sons, Ltd.     

热休克蛋白HSPA1A促进肿瘤细胞增殖的研究

本研究主要探索热休克蛋白A1A(HSPA1A)对HeLa、HT29、PC3这3种肿瘤细胞增殖的影响及其潜在机制.构建HSPA1A重组载体,转染肿瘤细胞,通过观察转染后细胞形态、MTT测定结果和细胞周期,探索HSPA1A对肿瘤细胞增殖的影响,通过免疫荧光的方法确定HSPA1A对癌细胞增殖发挥作用的细胞定位.过表达HSPA...     

Φ1.30mm HT胎圈钢丝的开发

根据用户要求,提出Φ1.30mm HT胎圈钢丝原料选用、表面预处理、拉拔、镀铜的技术要求。选取优质Φ5.5 mm 72LX盘条,抗拉强度不小于1 050 MPa,索氏体体积分数不小于85%;盘条预处理采用电解酸洗及涂硼工艺,电解电流(150±30)A;采用13道次拉拔,平均部分压缩率为19.9%,模芯采用YG8硬质合金材料,模具定径带长度约为钢丝直径的20%~40%,拉拔时模盒、卷筒温度应分别控制在30℃和50℃内;回火温度控制在420~440℃;镀铜时,控制ρ(CuSO4.5H2O)为10~16 g/L,ρ(Fe2+)<30 g/L。成品Φ1.30mm HT胎圈钢丝抗拉强度达到2186 MPa,镀层质量0.35 g/kg,与橡胶黏合力达到1120 N,各项指标均满足技术要求。     

Φ38mm腔体粉末触媒工艺合成高品质金刚石研究

采用气雾化Fe70Ni30粉末触媒及Φ38mm合成腔体,在国产Y-500型六面顶压机(缸径Φ500mm)上进行了高品质金刚石的合成实验研究。结果表明,平均单产为72ct,静压强度值在198.9~260.7kN之间,合成金刚石的TI、TTI值分别为74%~79.5%和66.8%~70.3%,且TI值和TTI值之差在10%以内,合成的金刚石为金黄色,晶型完整率高,呈六八面体,杂质含量少且呈规则分布,质量基本上接近于国外SMD20/SMD30产品水平。合成的金刚石质量的明显改善应归功于所采用的Fe70Ni30粉末触媒合成工艺对金刚石生长环境的改善和生长速率的有效控制。