Studies on high density polyethylene (HDPE) functionalized by ultraviolet irradiation and its application

The structure and properties of high density polyethylene (HDPE) functionalized by ultraviolet irradiation at different light intensities in air were studied by electron analysis, FTIR spectroscopy, contact angle with water, differential scanning calorimetry and mechanical properties measurement. The results show that oxygen‐containing groups such as C?O, C—O and C(?O)O were introduced onto the molecular chain of HDPE following irradiation, and the rate and efficiency of HDPE functionalization increased with enhancement of irradiation intensity. After irradiation, the melting temperature, contact angle with water and notched impact strength of HDPE decreased, the degree of crystallinity increased, and their variation amplitude increased with irradiation intensity. Compared with HDPE, the yield strength of HDPE irradiated at lower light intensity (32 W m^?2 and 45 W m^?2) increases monotonically with irradiation time, and the yield strength of HDPE irradiated at higher light intensity (78 W m^?2) increases up to 48 h and then decreased with further increase in irradiation time. The irradiated HDPE behaved as a compatibilizer in HDPE/polycarbonate (PC) blends, and the interface bonding between HDPE and PC was ameliorated. After adding 20 wt% HDPE irradiated at 78 W m^?2 irradiation intensity for 24 h to HDPE/PC blends, the tensile yield strength and notched Izod impact strength of the blend were increased from 26.3 MPa and 51 J m^?1 to 30.2 MPa and 158 J m^?1, respectively. Copyright © 2003 Society of Chemical Industry     

EBSP study of the annealing behavior of aluminum deformed by equal channel angular processing

Commercial purity aluminum (99.5%) was fabricated by equal channel angular pressing (ECAP) up to total accumulated strains of approx. 10. The annealing behavior of material deformed to total strains of approx. 1 and 10 was investigated, using heat treatments of 2 h at various temperatures from 100 to 500 °C. The microstructure of the annealed materials was characterized using the electron back-scatter pattern technique. A number of parameters were determined including the distribution and average values of both the boundary spacings and misorientations. For samples deformed to a total strain of 1, annealing resulted in discontinuous recrystallization. For samples deformed to a total strain of 10, annealing resulted in microstructures exhibiting characteristics of both uniform coarsening and, in a number of places, of discontinuous recrystallization. An attempt was made, based on the boundary spacing distributions, to separate these two components. The grain size after annealing was still however small, being just 6.4 μm after 2 h at 300 °C.     

WC/Cu复合材料制备及其高温性能

用机械合金化法结合冷变形，制备了WC／Cu复合材料，研究了冷变形后复合材料的组织特征和高温退火时韵性能变化。结果表明：烧结后的材料经冷变形，组织呈显著纤维状，WC颗粒弥散分布，密度明显提高，达到理论密度的99．2％；复合材料经600～900℃高温退火，强度和硬度略有下降，塑性则有大幅提高；900℃退火时未发生明显的再结晶，界面结合良好；所制备的WC／Cu复合材料有优良的综合性能。     

串行及并行A/D转换器在高速数据采集中的采样差别性分析

串行和并行接口模式是A/D转换器诸多分类中的一种,但却是应用中器件选择的一个重要指标.在同样的转换分辨率及转换速度的前提下,不同的接口方式不但影响了电路结构,更重要的是将在高速数据采集的过程中对采样周期产生较大影响.本文通过12位串行ADC ADS7822和并行ADC ADS774与AT89C51的接口电路,给出二者采样时间的差异性.     

基于FPGA的CAVLC编解码器设计与实现

H．264标准在基本档次和扩展档次中采用CAVLC熵编码，完成对变换系数残差块的编码。提出一种基于FPGA的H．264标准的CAVLC编解码器，程序代码用verilog硬件描述语言编写，并在QuartusⅡ中进行了仿真验证，可以实现对每个残差块数据的编解码并将其按照宏块光栅扫描的顺序输出到存储器，因此适合于嵌入在最终的码流中。仿真结果表明此CAVLC编解码器达到H．264标准中基本档次和扩展档次level3．0的性能要求。     

1/f noise in large-area Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te photodiodes

The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg_1−xCd_xTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of 1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The 1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density in the mid-10⁻¹⁵A/Hz^1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth i_n(f = 1 Hz, V_d = −60 mV, and Δf = 1 Hz) to dark current I_d(V_d = −60 mV) was α_SW-d = i_n/I_d ∼ 1 × 10⁻³. The SWIR detectors measured at 0 mV under illuminated conditions had median α_SW-P = i_n/I_ph ∼ 7 × 10⁻⁶. For mid-wave infrared (MWIR) detectors, α_MW-d = i_n/I_d ∼ 2 × 10⁻⁴, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under illuminated conditions at 98 K and −60 mV bias resulted in α_MW-P = i_n/I_ph = 4.16 ± 1.69 × 10⁻⁶. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias, with a noise-current-to-photocurrent ratio, α_MW-P, in the mid 10⁻⁶ range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, α_LW-d = i_n/I_d ∼ 6 × 10⁻⁶, for the best performers. The majority of the LWIR detectors exhibited α_LW-d on the order of 2 × 10⁻⁵. The photo-induced 1/f noise had α_LW-P = i_n/I_ph ∼ 5 × 10⁻⁶. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular bias. The 1/f noise was not a direct function of the applied bias.     

基于电源、地桥的电源网络布线后优化

随着集成电路规模的不断增大,电源网络的重要性日趋显著,电源网络的分布直接影响芯片的电压降(IR-drop)。一种布线后通过在空闲处插入电源桥和地桥的方法,可以在不增加芯片面积的情况下,改善IR-drop效应。实验结果表明在芯片布局利用率不高的情况下(70~75%),该方法可以使IR-drop得到明显的优化。     

提取地震信号高频信息方法的若干问题

岩性油气藏勘探已成为当代油气勘探的重要组成部分,因此提取地震资料高频信息已成为一个重要研究课题。文中对分辨率、分频处理地震信号、波阻抗反演中的一些问题进行了较深入的讨论,并得出以下认识:1要提高垂向和横向分辨率,必须设法提高野外采集地震资料的频率;2地震分频处理是偏移后提高分辨率的常用方法之一,这种方法应该限定在地震波的有效频带内,而超出有效频带,可能会带来很多假像;3低频合成地震记录中高频反射系数存在不确定性。在基于模型波阻抗反演的方法中,反演结果受初始模型的影响非常大,初始模型是依据测井资料建立的,初始模型与实际情况越接近,反演效果就越好;否则,会产生模型化的现象;4在相对波阻抗数据体(相当于地震数据体)作为约束条件下的SP测井参数协克里金插值是正演过程,消除了模型化的问题,使反演结果更接近真实情况,提高了砂层真实的分辨率。     

双电池系统电源选择器MAX1773/1773A

MAX1773／MAX1773A是用于双电池系统的电源选择器，它允许外部控制器去管理双电池组、适配器输入、电池充电器和系统负载所需的电源连接。文中介绍了MAX1773／1773A的特点、引脚功能、内部结构和工作原理，给出了MAX1773/MAX1773A的典型工作电路。     

Wear and Creep Characteristics of a Carbon‐Derived Si3N4/SiC Micro/Nanocomposite

In the presented work some properties of a recently developed Si₃N₄/SiC micro/nanocomposite have been investigated. The material was tested using a pin on disc configuration. Under unlubricated sliding conditions using Si₃N₄ pin at 50 % humidity, the friction coefficient was in the range of 0,6 ‐ 0,7. The reduction of humidity resulted in a lower coefficient of friction, in vacuum the coefficient of friction had a value of about 0,6. The wear resistance in vacuum was significantly lower then that in air. The wear patterns on the Si₃N₄+SiC disc revealed that mechanical fracture was the wear controlling mechanism. Creep tests were realized in four point bending configuration in the temperature interval 1200‐1400 °C at stresses 50,100 and 150 MPa and the minimal creep deformation rate was established for each stress level. The activation energy, established from the minimal creep deformation had a value of about 360 kJ/mol and the stress exponent values were in the range of 0.8‐1.28. From the achieved stress exponents it can be assumed that under the studied load/temperature conditions the diffusion creep was the most probable creep controlling mechanism.