Gapless point back surface field for the counter doping of large‐area interdigitated back contact solar cells using a blanket shadow mask implantation process

Gapless interdigitated back contact (IBC) solar cells were fabricated with phosphorous back surface field on a boron emitter, using an ion implantation process. Boron emitter (boron ion implantation) is counter doped by the phosphorus back surface field (BSF) (phosphorus ion implantation) without gap. The gapless process step between the emitter and BSF was compared to existing IBC solar cell with gaps between emitters and BSFs obtained using diffusion processes. We optimized the doping process in the phosphorous BSF and boron emitter region, and the implied V_oc and contact resistance relationship of the phosphorous and boron implantation dose in the counter doped region was analyzed. We confirmed the shunt resistance of the gapless IBC solar cells and the possibility of shunt behavior in gapless IBC solar cells. The highly doped counter doped BSF led to a controlled junction breakdown at high reverse bias voltages of around 7.5 V. After the doping region was optimized with the counter doped BSF and emitter, a large‐area (5 inch pseudo square) gapless IBC solar cell with a power conversion efficiency of 22.9% was made.     

Degrees of freedom for MIMO interference broadcast channels

Multiple-input multiple-output (MIMO) interference broadcast channel (IBC) plays an important role in the modern wireless communications. The upper bound of degrees of freedom (DoF) and its Corresponding achievable schemes was investigated. However, all the achievable schemes require perfect channel state information at transmitters (CSIT). In absence of CSIT, the DoF value is still unknown. This article mainly focuses on the G-cell K-user MIMO IBC, where there are M antennas at each transmitter and N antennas at each receiver. The transmitters only know channel coherence time internals rather than the values of channel coefficients. The users in the same cell are assumed to be able to share the channel information. Based on a heterogeneous semi-staggered block fading model, a blind interference alignment (IA) scheme was proposed for this scenario. It is shown that when R≥1/(G-1) and R = min(M,KN)/max(M,KN), a total of GKMN/(M + KN) DoF can be achieved. The inner bound is same with the decomposition DoF upper bound. Since the complexity is an important performance index to evaluate the achievable scheme, the quantitative analysis for the complexity is presented.     

基于异构密码系统的混合群组签密方案

群组签密既能实现群组签名,又能实现群组加密,但是现有的群组签密方案的发送者和接收者基本上在同一个密码系统中,不能满足现实环境的需求,而且基本上采用的是公钥加密技术,公钥加密技术在加密长消息时效率较低。因此该文提出由基于身份的密码体制(IBC)到无证书密码体制(CLC)的异构密码系统的混合群组签密方案。在该方案中,私钥生成器(PKG)和密钥生成中心(KGC)能够分别在IBC密码体制和CLC密码体制中产生自己的系统主密钥;而且群组成员只有协作才能解签密,提高了方案的安全性;同时在无需更换群组公钥和其他成员私钥的情况下,用户可以动态地加入该群组。所提方案采用了混合签密,具有可加密任意长消息的能力。在随机预言模型下,证明了该文方案在计算Diffie-hellman困难问题下具有保密性和不可伪造性。通过理论和数值实验分析表明该方案具有更高的效率和可行性。

     

Boron‐doped selective silicon epitaxy: high efficiency and process simplification in interdigitated back contact cells

The present research and development activities in crystalline silicon photovoltaics include the exploration of doping technologies alternative to the mainstream diffusion process. The goal is to identify those technologies with potential to increase the solar cell efficiency and reduce the cost per watt peak. In that respect, this work presents the selective epitaxial growth of silicon as a candidate for boron doping; showing the results of the evaluation of boron‐doped silicon epitaxial emitters on slurry and diamond‐coated wire‐sliced Czochralski material, their integration in interdigitated back contact solar cells, and the development of a novel process sequence to create the interdigitated rear junction of these devices using selective epitaxial growth. Boron‐doped silicon epitaxy is demonstrated to perform in the high efficiency range (>22%), and the use of selective epitaxial growth is proposed as a route for the simplification of the interdigitated back contact solar cell flow. Copyright © 2013 John Wiley & Sons, Ltd.     

规范IBC2015和UBC1997抗震设计对比分析

文中将IBC2015和UBC1997的相关抗震设计的核心内容进行了对比分析,主要包括抗震设计方法,结构最大适用高度,等效侧向力计算公式及其相关参数以及结构地震作用下的层间位移限值。通过对IBC2015和UBC1997的抗震设计进行对比分析,从而帮助设计人员掌握美国标准抗震设计的核心内容,以在美标工程设计中准确地应用。     

基于商密SM9算法的物联网安全平台设计与应用

物联网普遍存在遭受网络攻击类型多样化、没有安全保护标准、数据极易被截获或破解等安全风险,核心问题在于缺乏设备、服务提供者、应用、数据、交易等物的安全认证机制。因此,有必要建立一种提供认证鉴权和数据保护的方案体系,建立物与物、物与人之间的信任。密码技术是解决核心安全问题的基础理论和技术,而传统的证书体系并不适应于物联网环境,基于商密SM9的算法才是目前物联网安全认证的最佳选择。物联网安全平台依赖商密SM9算法的优势,有效克服了传统算法中密钥分发安全性弱等问题,深入物联网行业终端与应用层面,建立了面向物联网业务的端到端安全。     

基于MoM-PO的各向异性阻抗面电磁散射研究

该文基于阻抗边界条件(IBC),采用矩量法-物理光学(MoM-PO)混合算法,研究了3维各向异性阻抗面的电磁散射特性.根据表面等效原理,将空间散射场等效为MoM区和PO区电磁流的辐射场,感应电磁流以3维RWG (Rao-Wilton-Glisson)矢量基函数展开.以表面阻抗并矢表征电磁参数,给出典型各向异性阻抗面目标的电磁仿真算例,结果与Mie级数等精确解吻合良好,显示了该方法的有效性.     

Ad Hoc网络基于身份的密钥管理方案

在基于身份的Ad Hoc网络密钥管理的方案中,根据用户身份生成用户密钥时无法对用户的身份真实性进行有效确认,针对这一问题,该文结合基于身份的密码系统和基于口令的认证技术,给出一个密钥管理方案,该方案通过口令技术实现节点身份的认证,使用基于身份的密钥管理系统完成密钥的安全分发。同时基于ROM 模型证明了该方案的安全性。     

基于层级化身份的可证明安全的认证密钥协商协议

目前基于身份的认证密钥协商协议均以单个私钥生成器(PKG)为可信第三方,但这种系统结构难以满足身份分层注册与认证需求。该文以基于层级化身份的加密(HIBE)系统为基础重构了私钥的组成元素,并利用椭圆曲线乘法循环群上的双线性映射提出一个基于层级化身份的认证密钥协商协议,为隶属于不同层级的云实体提供了安全的会话密钥协商机制。基于CDH(Computational Diffie-Hellman)与GDH(Gap Diffie-Hellman)假设,该文证明了新协议在eCK模型下具有已知密钥安全性、前向安全性和PKG前向安全性,并且能够抵抗基于密钥泄露的伪装攻击。     

适合于直接驱动型风力发电系统的交叉型Boost变流器

采用一个现有的小功率永磁同步机和风力机直接耦合构建了一个直驱型风力发电系统。系统升压部分采用了两单元交错式Boost变换器(IBC),两个Boost变换器采用频率相同、存在一定相移角度的驱动信号,通过变换器并联,各个单元可以共同承担输入电流,因此电力电子系统具有更高的可靠性和效率。另外,通过并联也可以提高整个系统的性能(如维护简单,容错性高,散热性好)。仿真和实验验证了上述结论的正确性。