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1.
SUNZhencui CAOWentian WEIQinqin WANGShuyun XUEChengshan SUNHaibo 《稀有金属(英文版)》2005,24(2):194-199
Hexagonal GaN films were prepared by nitriding Ga2O3 films with flowing ammonia. Ga2O3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.) magnetron sputtering. This paper have investigated the change of structural properties of GaN films nitrided in NH3 atmosphere at the temperatures of 850, 900, and 950℃ for 15 min and nitrided at the temperature of 900℃ for 10, 15, and 20 rain, respectively. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were used to analyze the structure, surface morphology and composition of synthesized samples. The results reveal that the as-grown films are polycrystalline GaN with hexagonal wurtzite structure and GaN films with the highest crystal quality can be obtained when nitrided at 900℃ for 15 min. 相似文献
2.
Anwar Jarndal 《国际射频与微波计算机辅助工程杂志》2013,23(2):149-156
An accurate equivalent circuit large‐signal model (ECLSM) for AlGaN‐GaN high electron mobility transistor (HEMT) is presented. The model is derived from a distributed small‐signal model that efficiently describes the physics of the device. A genetic neural‐network‐based model for the gate and drain currents and charges is presented along with its parameters extraction procedure. This model is embedded in the ECLSM, which is then implemented in CAD software and validated by pulsed and continuous large‐signal measurements of on‐wafer 8 × 125‐μm GaN on SiC substrate HEMT. Pulsed IV simulations show that the model can efficiently describe the bias dependency of trapping and self‐heating effects. Single‐ and two‐tone simulation results show that the model can accurately predict the output power and its harmonics and the associated intermodulation distortion (IMD) under different input‐power and bias conditions. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2013. 相似文献
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STLING Mikael 《中国科学:信息科学(英文版)》2011,(5):1087-1093
Silicon carbide (SiC) semiconductor devices for high power applications are now commercially available as discrete devices. Recently Schottky diodes are offered by both USA and Europe based companies. Active switching devices such as bipolar junction transistors (BJTs), field effect transistors (JFETs and MOSFETs) are now reaching the market. The interest is rapidly growing for these devices in high power and high temperature applications. The main advantages of wide bandgap semiconductors are their very hi... 相似文献
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Y.C. ChangM.L. Huang Y.H. ChangY.J. Lee H.C. ChiuJ. Kwo M. Hong 《Microelectronic Engineering》2011,88(7):1207-1210
Al2O3, HfO2, and composite HfO2/Al2O3 films were deposited on n-type GaN using atomic layer deposition (ALD). The interfacial layer of GaON and HfON was observed between HfO2 and GaN, whereas the absence of an interfacial layer at Al2O3/GaN was confirmed using X-ray photoelectron spectroscopy and transmission electron microscopy. The dielectric constants of Al2O3, HfO2, and composite HfO2/Al2O3 calculated from the C-V measurement are 9, 16.5, and 13.8, respectively. The Al2O3 employed as a template in the composite structure has suppressed the interfacial layer formation during the subsequent ALD-HfO2 and effectively reduced the gate leakage current. While the dielectric constant of the composite HfO2/Al2O3 film is lower than that of HfO2, the composite structure provides sharp oxide/GaN interface without interfacial layer, leading to better electrical properties. 相似文献
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在图形化蓝宝石衬底上制备了串联结构的氮化镓(GaN)高压发光二极管(LED),分别在极小电流与极低温度下研究了其光电特性。结果表明,在极小电流区(I<1×10-8 A),主要输运机制为缺陷辅助隧穿。由于能带热收缩效应和辐射复合中心的热激活效应,随着温度升高,电致发光(EL)峰发生红移,半高宽(FWHM)增加;光输出强度与注入电流呈幂指数关系,表明极小电流下非辐射复合占主导,且载流子通过缺陷辅助隧穿至量子阱。在极低温度下(T~40 K)仍能观测到电致发光现象,表明载流子并未被完全冻析,在强场下可由施主态或受主态通过缺陷辅助隧穿至量子阱;随着注入电流增加,注入电荷的库伦电场对极化电场的屏蔽作用增强,导致发光峰发生明显的蓝移,能带填充效应则导致半高宽增加。 相似文献
8.
研究了金属有机物化学气相外延 (MOVPE)方法生长的非故意掺杂的立方相 Ga N的持续光电导效应 .在六方相 Ga N中普遍认为持续光电导效应与黄光发射有关 ,而实验则显示在立方 Ga N中 ,持续光电导效应与其中的六方相 Ga N夹杂有关系 ,而与黄光发射没有关系 .文中提出 ,立方相 Ga N与其中的六方相 Ga N夹杂之间的势垒引起的空间载流子分离是导致持续光电导现象的物理原因 .通过建立势垒限制复合模型 ,解释了立方相 Ga N的持续光电导现象的物理过程 ,并对光电导衰减过程的动力学作了分析 .对实验数据拟合的结果证明以上的模型和推导是与实验相符的 . 相似文献
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