Optical determination of the junction temperature of OLEDs

This paper describes a novel optical measurement technique for the in situ determination of the spatial temperature distribution at the organic layer level in large-area organic light-emitting diodes (OLEDs). The local junction temperature of OLEDs is a very important factor with respect to the luminance uniformity. Moreover the variation of local temperatures leads to a non-uniform depreciation of its light output, which in turn increases the luminance non-uniformity over time and affects the lifetime expectancy of the OLED.     

MPS二极管的少子特性仿真

混合pin/肖特基(MPS)二极管是广泛应用于电子电路中的快恢复功率器件,具有高击穿电压、快速开关和正向电流大等特性。对MPS二极管漂移区的少数载流子的特性进行了仿真分析。仿真结果表明,MPS二极管的p^+区向漂移区注入的少数载流子浓度随外加正向电压和pn结面积占元胞总面积比例的增大而增大。虽然漂移区的少数载流子改变了MPS二极管的工作模式,增大了电流,但是存储在漂移区的少数载流子增大了反向峰值电流和恢复时间,进而增大了功耗并降低了关断速度。折中考虑正向电流和反向恢复特性,可获得具有正向电流大、反向峰值电流小和反向恢复时间短的MPS二极管。     

氧化锌压敏电阻老化过程中非线性系数变化的研究

根据氧化锌压敏电阻(MOV)的非线性特征,结合双肖特基(Schottky)势垒理论和氧化锌陶瓷在小电流区的导电机制,提出了氧化锌压敏电阻老化劣化过程中必然伴随着非线性系数α的变化的结论.针对一种型号的MOV,通过大量实验数据分析得出:在不同老化劣化实验条件下,MOV的非线性系数α均随劣化程度的增加而呈下降趋势;在标称电...     

Preparation and properties of Ni/InGaN/GaN Schottky barrier photovoltaic cells

Ni/In_xGa_1−xN/GaN Schottky barrier solar cells with different In contents (x = 0.07/0.13) and two types of Schottky patterns (semitransparent current spreading layer and grid contact) are fabricated and the dependences of photovoltaic performances of these solar cells on In contents and Schottky patterns are studied. Solar cells with semitransparent contact have almost the same open-circuit voltages (V_oc) as solar cells with grid contact and exhibit a higher fill factor (FF). However, solar cells with grid contact exhibit a higher maximum output power density (P_max) than semitransparent contact due to their larger short-circuit current density (J_sc). On the other hand, V_oc and FF decrease significantly with increasing In content (beyond the decrease expected from the band gap of InGaN). By comparing the X-ray rocking curves, AFM images, dark current characteristics and spectral responsivities, it could be concluded that the deterioration of InGaN crystal quality with increasing In content is the dominant reason accounting for the strong decrease of V_oc and FF. In addition, using AMPS simulation, the band structure and ideal spectral responsivities are obtained. Comparison of the experimental and simulated results also shows that high crystal quality is a key factor to obtain high performance InGaN-based Schottky barrier photovoltaic cells.     

NiuPt1-uSivGe1-v/Si0.72Ge0.28界面形貌的改善

针对锗硅在形成金属锗硅化物时存在部分应力释放、界面形貌特性变差的问题,提出了在Si0.72Ge0.28上分别外延薄硅(Si)覆盖层和锗硅(Si072Ge0.28)缓冲层的工艺方案.实验结果表明,通过两步快速热退火,两个方案的工艺条件都能形成低阻的NiuPt1-uSitGe1-v和改善NivPt1-uSitGe./Si0.72Ge0.28的界面形貌.但相比较而言,在Si0.72Ge0.28上外延10 nm Si覆盖层的方案能够形成更好的NiuPt1-uSivGe1-t/Si0.72Ge0.28界面形貌.与没有改进的方案相比,该方案形成的肖特基接触更具有更低的肖特基接触势垒高度,更易形成欧姆接触.     

单壁碳纳米管场效应晶体管的制备工艺研究

综述了碳纳米管场效应晶体管(CNTFET)的主要结构和导电沟道的制备工艺,如AFM探针操控、CVD原位生长、交流介电泳和L-B大面积操控排布等方法。在对CNTFET的这些结构和制备工艺进行详细分析的基础上,着重指出目前CNTFET导电沟道制备中存在的诸如金属性单壁碳纳米管(SWCNT)的烧除、接触电阻大、滞后现象以及p型CNTFET转化等问题,并针对这些问题提出了具体可行的解决方案。     

Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity

Electrical properties, including current-voltage (I-V) and capacitance-voltage (C-V) characteristics, have been measured on a large number of Ti, Ni, and Pt-based Schottky barrier diodes on 4H-SiC epilayers. Various nonideal behaviors are frequently observed, including ideality factors greater than one, anomalously low I-V barrier heights, and excess leakage currents at low forward bias and in reverse bias. The nonidealities are highly nonuniform across individual wafers and from wafer to wafer. We find a pronounced linear correlation between I-V barrier height and ideality factor for each metal, while C-V barrier heights remain constant. Electron beam induced current (EBIC) imaging strongly suggests that the nonidealities result from localized low barrier height patches. These patches are related to discrete crystal defects, which become visible as recombination centers in the EBIC images. Alternative explanations involving generation-recombination current, uniform interfacial layers, and effects related to the periphery are ruled out.     

一种有机/金属肖特基二极管的实验研究

提出了一种简单有效的有机/金属肖特基二极管的制备方法:通过简单的真空气相沉积工艺,依次将有机材料PTCDA(C24H8O6)薄膜和金属电极Au蒸镀在透明导电玻璃ITO上.通过在室温条件下对该二极管的电流-电压(I-V)特性的测试发现,其整流系数可达104.根据标准肖特基理论以及实验所得电容-频率(C-f)和电容-电压(C-V)的测试结果,得到该有机肖特基势垒高度在0.2～0.3eV范围内.     

Influence of operation conditions on true-static DC characteristics and on electro-thermal transient states in silicon carbide Merged PiN Schottky diodes.

In this paper, measured and calculated non-isothermal DC characteristics of silicon carbide MPS devices are investigated, with special attention paid on critical parameters, such as maximum current and junction temperature at which a thermal runaway may occur. Electro-thermal transient states in single MPS devices (forward surge current tests) and in the simple Greatz rectifier are simulated and compared to measurements. Various electro-thermal models of SiC SBDs, with a simplified, effective procedure for calculations of junction temperature are proposed.     

Experimental and numerical analysis of channel-length-dependent electrical properties in bottom-gate,bottom-contact organic thin-film transistors with Schottky contact

Channel length dependence of field-effect mobility and source/drain parasitic resistance in pentacene thin-film transistors with a bottom-gate, bottom-contact configuration was investigated. Schottky barrier effect such as nonlinear behaviors in transistor output characteristics appeared and became more prominent for shorter channel length less than 10 μm, raising some concerns for a simple utilization of conventional parameter extraction methods. Therefore the gate-voltage-dependent hole mobility and the source/drain parasitic resistance in the pentacene transistors were evaluated with the aid of device simulation accounting for Schottky contact with a thermionic field emission model. The hole mobility in the channel region shows smaller values with shorter channel length even after removing the influence of Schottky barrier, suggesting that some disordered semiconductor layers with low carrier mobility exist near the contact electrode. This experimental data analysis with the simulation enables us to discuss and understand in detail the operation mechanism of bottom-gate, bottom-contact transistors by considering properly each process of charge carrier injection, carrier flow near the contact region, and actual channel transport.